Flexible energy storage thin film, preparation method thereof and thin film capacitor
A film capacitor and film technology, applied in the energy field, can solve the problems of insufficient flexibility, high dielectric constant, and low dielectric loss of energy storage films, and achieve good microstructure, high dielectric constant, and low dielectric loss. Effect
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[0040] like figure 1 As shown, the preparation method of the flexible energy storage film provided by the invention comprises:
[0041] (a), providing a flexible metal substrate;
[0042] (b) using strontium titanate as a target, depositing a strontium titanate thin film prefabricated layer on the flexible metal substrate by magnetron sputtering;
[0043] (c), heat-treating the flexible metal substrate deposited with the prefabricated layer of strontium titanate film to obtain the strontium titanate film; and
[0044] (d), forming an electrode layer on the strontium titanate film to obtain a flexible energy storage film.
[0045] In step (a), the material of the flexible metal substrate is not limited, as long as it has good flexibility, strong high-temperature oxidation resistance, electrical conductivity, and does not react with the ceramic film, including Pt, Au, Ag, Cu, One of Ni, Ti, Al.
[0046] Considering that copper foil is the most cost-effective metal material i...
Embodiment 1
[0078] like figure 1 As shown, the rolled copper foil is used as the substrate, the thickness of the copper foil is 18 microns, the surface roughness is 0.5 microns, it is placed in a vacuum chamber, and the vacuum is pumped to 3×10 -3 Pa. The vacuum chamber was heated to 150° C., held for 10 minutes, filled with argon, and the argon flow rate was 30 sccm. Turn on the Hall ion source, set the voltage of the Hall ion source to 1000v, the current to 0.5A, and process for 1min to make the surface tension of the copper foil reach 60 dynes.
[0079] Close the small gate valve to a vacuum of 0.4Pa, keep the argon flow at 30sccm, turn on the magnetron sputtering power supply to 80w, use strontium titanate with a density of 96% as the target material, deposit for 3 minutes, and form on the copper foil 130nm strontium titanate thin film prefabricated layer, the grain size of the strontium titanate thin film prefabricated layer is 80nm, and the structure is compact.
[0080] Close th...
Embodiment 2
[0084] like figure 1 As shown, the rolled copper foil is used as the substrate, the thickness of the copper foil is 12 microns, and the surface roughness is 0.5 microns. It is placed in a vacuum chamber and evacuated to 3×10 -3 Pa. The vacuum chamber was heated to 150° C., held for 10 minutes, filled with argon, and the argon flow rate was 30 sccm. Turn on the Hall ion source, set the voltage of the Hall ion source to 1000v, the current to 0.5A, and process for 1min to make the surface tension of the copper foil reach 65 dynes.
[0085] Close the small gate valve to a vacuum of 0.4Pa, keep the argon gas flow at 30sccm, turn on the magnetron sputtering power supply to 80w, use strontium titanate with a density of 97% as the target material, deposit it for 4 minutes, and form on the copper foil 150nm strontium titanate thin film prefabricated layer, the grain size of the strontium titanate thin film prefabricated layer is 80nm, and the structure is compact.
[0086] Close the...
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Abstract
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