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TFT substrate and preparation method thereof and display device

A technology for display devices and substrates, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as unevenness, fast etching of copper film layers, and piercing of passivation layer gate insulation layers, etc. Achieve the effect of preventing side erosion and preventing damage

Active Publication Date: 2020-01-10
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

[0008] At present, in the preparation process of thin-film transistor array substrates, the source and drain metals mostly use copper / molybdenum Cu / Mo film layer or copper / molybdenum titanium Cu / MoTi film layer. In this structure, due to the consideration of molybdenum Mo residue or different types of cupric acid Such problems will lead to faster etching of the copper film layer, and the line width deviation (CD bias) generally exceeds 1.5um, which cannot meet the etching of the copper film layer with a thinner line width; at the same time, it is also prone to copper / molybdenum Cu / Mo side etching; The unevenness of the formed sidewall (sidewall) leads to problems such as passivation layer or gate insulation layer piercing

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  • TFT substrate and preparation method thereof and display device
  • TFT substrate and preparation method thereof and display device
  • TFT substrate and preparation method thereof and display device

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[0040] In addition, a method for preparing a TFT substrate of the present invention includes the following steps: depositing a metal material on a base substrate; patterning the metal material to form a gate; forming a gate insulation on the base substrate layer to cover the patterned gate; an active layer is formed on the gate insulating layer and located above the gate; a first metal layer, a first metal layer, and A second metal layer and a third metal layer, wherein the first metal layer is made of metal material, the second metal layer is made of nickel or nickel alloy, and the third metal layer is made of copper material ; and patterning the first metal layer, the second metal layer, the third metal layer and the active layer by coating, exposing and etching to form patterned source, drain and active layers.

[0041] Further, after the step of forming the patterned source, drain and active layer, it further includes: forming a passivation layer on the patterned source, d...

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Abstract

The invention discloses a TFT substrate and a preparation method thereof and a display device. The line width of a copper film layer in a back channel etching-indium gallium zinc oxide TFT substrate can be smaller, and the TFT substrate can be applied to wiring with higher resolution. Meanwhile, dry etching is performed on a molybdenum film layer serving as a channel bottom layer through etching gases NF3 and O2 to prevent the indium gallium zinc oxide film layer from being damaged.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT substrate, a preparation method thereof, and a display device. Background technique [0002] Liquid crystal display (Liquid Crystal Display, LCD) has many advantages such as thin body, power saving, no radiation, etc., and has been widely used, such as: mobile phone, personal digital assistant (PDA), digital camera, computer screen or notebook computer screen etc. [0003] Organic light-emitting diode (Organic Light-Emitting Diode, OLED) display, also known as organic electroluminescent display, is a new type of flat panel display device, due to its simple preparation process, low cost, low power consumption, high luminance, Wide range of working temperature, light and thin size, fast response speed, easy to realize color display and large-screen display, easy to realize matching with integrated circuit driver, easy to realize flexible display, etc., so it has broad appli...

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Application Information

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IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1214H01L27/1259
Inventor 章仟益
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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