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A method for preparing indium oxide nanotubes with porous bn nanofibers as templates

A nanofiber and nanotube technology is applied in the synthesis field of novel indium oxide nanotubes, which can solve the problems of complex process and achieve the effects of simplified process, low energy consumption and high purity

Active Publication Date: 2022-02-08
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Shen et al. used commercial alumina as a template to obtain In 2 o 3 nanotube, but the minimum temperature in the middle heating zone of the reaction system also needs to be 350°C and the process is complicated

Method used

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  • A method for preparing indium oxide nanotubes with porous bn nanofibers as templates
  • A method for preparing indium oxide nanotubes with porous bn nanofibers as templates
  • A method for preparing indium oxide nanotubes with porous bn nanofibers as templates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Select melamine and boric acid as raw materials, dissolve in 1000mL deionized water, the concentration is 0.012g melamine and 0.018g boric acid per ml of water, heat at 95°C to fully dissolve and keep it warm for 6h, take it out and naturally cool to room temperature, and filter it to get white Solid; redissolve the white solid in deionized water at a concentration of 0.008g white solid per milliliter of water, keep at 95°C for 3 hours, then quickly freeze the hot solution with liquid nitrogen, and turn the solution into a white solid within 1-2min. And dry in a vacuum freeze dryer (temperature -50°C, 20Pa) for 72h to obtain white flocs; finally, heat treatment in a tube furnace at 1100°C for 4h under a nitrogen atmosphere, the heating rate is 5°C / min, and the gas flow rate is 80mL / min to obtain porous BN nanofibers.

[0030] Weigh 51.2 mg of the prepared porous BN nanofibers, disperse them in 200 mL of ethylene glycol solution, sonicate for 10 min (the dispersion frequen...

Embodiment 2、 example 3

[0033] Change the addition of indium nitrate in embodiment 1 to 100mg, 50mg, reduce the consumption of indium nitrate, other each operation is all identical with embodiment 1, the product that obtains is with embodiment 1.

Embodiment 4

[0035] The dispersant in Example 1 is changed into PEG4000 solution, and other operations are the same as Example 1, and the product obtained is the same as Example 1.

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Abstract

The invention relates to a method for preparing indium oxide nanotubes with porous BN nanofibers as templates. The method comprises the following steps: adding porous BN nanofibers into an ethylene glycol solution, ultrasonically treating for 5-30 minutes, and then stirring for 10-60 minutes, then adding indium nitrate and a dispersant therein under stirring, and then adding urea, and ultrasonically treating for 5 minutes ~ 30 minutes, stirring for 10 ~ 60 minutes, and then transposing the autoclave at 190 ~ 220 ° C for 19 ~ 24 hours; the obtained product is indium oxide nanotubes. The method of the present invention is simple to operate, does not need harsh experimental conditions, and the prepared In 2 o 3 The nanotube has uniform size, high purity, and is environmentally friendly. The synthesis temperature can be as low as 190°C, which is the most reported synthesis of In 2 o 3 The lowest temperature of the nanotube.

Description

technical field [0001] The technical solution of the present invention relates to a synthesis method of a novel indium oxide nanotube, specifically an environmentally friendly indium oxide nanotube with simple operation, ultra-low reaction temperature, no need for high-temperature calcination treatment, uniform synthetic size, and high purity. The synthetic method of pipe belongs to the field of new material preparation and nanometer material technology Background technique [0002] Porous boron nitride (BN) nanofiber is a nanofiber with high aspect ratio and good flexibility, which is a good carrier and template material. Indium oxide (In 2 o 3 ) is an N-type semiconductor, which is widely used in optoelectronic devices, ultraviolet lasers, gas sensors, solar cells, equipment display devices, etc., and is a semiconductor material with broad application prospects. [0003] At present, about indium oxide nanotubes (In 2 o 3 There are many synthetic methods of nanotube, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00B82Y40/00C01B21/064
CPCC01G15/00B82Y40/00C01B21/064C01P2004/13C01P2004/10C01P2002/72C01P2004/03C01P2004/04
Inventor 黄阳张旭林靖郁超唐成春
Owner HEBEI UNIV OF TECH