Preparation method for vanadium dioxide films

A vanadium dioxide and thin film technology, applied in the field of vanadium dioxide thin film preparation, can solve the problems of difficulty in ensuring thickness uniformity and accuracy, poor thin film thickness uniformity and controllability, unfriendly vanadium dioxide thin film environment, and the like, Achieve the effects of precise and controllable film thickness, good phase unity, and low film surface roughness

Active Publication Date: 2020-01-17
XIAN MODERN CHEM RES INST
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  • Claims
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Problems solved by technology

The magnetron sputtering method is to form a film by sputtering a vanadium target under high pressure, and prepare a vanadium dioxide film with the subsequent annealing process. The uniformity and controllability of the film thickness are poor.
In addition, the magnetron sputtering method is difficult to form films on curved surfaces and other complex surfaces, and it is difficult to be widely used
The preparation of vanadium dioxide thin films by sol-gel method has the disadvantages of unfriendly environment, difficulty in guaranteeing thickness uniformity and accuracy, etc.
In addition, the sol-gel method is difficult to form films on large-area substrates and surfaces with complex structures.
The vanadium dioxide film prepared by chemical vapor deposition cannot be widely used due to high reaction temperature, large damage to the substrate, and difficulty in accurately controlling the film thickness.

Method used

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  • Preparation method for vanadium dioxide films
  • Preparation method for vanadium dioxide films
  • Preparation method for vanadium dioxide films

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Embodiment 1

[0044] The present embodiment provides a kind of preparation method of vanadium dioxide thin film, and this method specifically comprises the following steps:

[0045] Step 1: Preparation of vanadium oxide film by atomic layer deposition

[0046] (1) Place the cleaned glass slide in the atomic layer deposition reaction chamber.

[0047] (2) Start the vacuum system of the atomic layer deposition equipment to evacuate the atomic layer deposition reaction chamber to make it at 1Torr; start the temperature control system to heat different parts of the atomic layer deposition system, so that the triisopropoxyvanadyl precursor and injection The temperature of the channel is 50°C, the temperature of the deionized water precursor storage tank and the injection channel is 25°C, the inlet temperature of the atomic layer deposition system is 80°C, the temperature of the reaction chamber is 150°C, and the outlet temperature of the atomic layer deposition system is 120°C; start the flow T...

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Abstract

The invention discloses a preparation method for vanadium dioxide films; and an atomic layer deposition film preparation technology and a vacuum oxygen partial pressure aftertreatment annealing process are adopted. The atomic layer deposition technology is adopted to alternately inject precursors, needed by preparation of two different vanadium oxide films , into an atomic layer deposition reaction cavity for chemical absorption and chemical reaction with the surface of a substrate layer to prepare the vanadium oxide films. The annealing treatment is performed in an oxygen-injected annealing furnace to form valence-state unified crystallized vanadium pentoxide films; and the vanadium pentoxide films are positioned in a vacuum annealing furnace with a certain oxygen partial pressure for annealing to prepare crystallized vanadium dioxide films. The atomic layer deposition film preparation method has such characteristics as high automation degree, precise and controllable thickness of thefilms, good uniformity of the films, good repeatability and high bonding strength between the films and the substrate layer. The vanadium dioxide films have excellent temperature-infrared characteristics, and can be applied to the research, the development and the application of thermally induced phase change devices.

Description

technical field [0001] The invention relates to a method for preparing a vanadium dioxide thin film, belonging to the technical field of material preparation. Background technique [0002] Building energy consumption refers to the energy consumed by people in their daily work and life due to heating, air conditioning, lighting, cooking, etc. In my country, the current energy consumption of air conditioners accounts for about 70% of the total building energy consumption, and about 22% of the total energy consumption (building energy consumption, industrial energy consumption, agricultural energy consumption and transportation energy consumption). Building energy conservation has become a topic of common concern in the world. Improving the energy utilization rate in buildings is the energy research focus of the Building Festival. Its purpose is to use energy rationally and continuously improve energy utilization efficiency under the condition of ensuring the comfort of buildin...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/40C23C16/52C23C16/56
CPCC23C16/405C23C16/45527C23C16/52C23C16/56
Inventor 李建国冯昊秦利军龚婷张王乐惠龙飞
Owner XIAN MODERN CHEM RES INST
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