A silicon electro-optical modulator based on ito directional coupler
A directional coupler, electro-optical modulator technology, applied in the directions of instruments, optics, light guides, etc., can solve problems such as unfavorable practical applications, high optical loss, etc., and achieve the effect of convenient design, large variation, and reduced size
Active Publication Date: 2020-09-15
ZHEJIANG UNIV
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Problems solved by technology
Due to the presence of surface plasmon modes with high absorption properties at the interface between the plasmonic material and the adjacent dielectric, the device suffers from high optical loss, which is not conducive to practical applications
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[0034] The present invention will be further described below in conjunction with drawings and embodiments.
[0035] A silicon nanowire waveguide based on a silicon on insulator (Silicon on Insulator, SOI) material is selected, the core layer is a silicon material layer 18, the thickness is 340 nm, and the refractive index is 3.48; the lower cladding layer is a first silicon dioxide layer 20 with a thickness of 2 μm. , the refractive index is 1.444; the upper cladding is air, and the refractive index is 1. The first silicon dioxide layer 20 deposited on the ITO layer 17 has a thickness of 20 nm and a refractive index of 1.444; the thickness of the ITO layer 17 is 20 nm, and the refractive indices in the two states are n1=1.939348, k1=0.030085, respectively, n2=1.042, k2=0.273; the thickness of gold is 80nm, refer to Johnson and Christy1972 (n=0.52406, k=10.742); in this embodiment, the fundamental mode of TM polarization is transmitted in the waveguide, and the working waveleng...
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Abstract
The invention discloses a silicon electro-optic modulator based on an ITO directional coupler. The silicon electro-optic modulator is composed of a bus waveguide and a sub-line waveguide, when the silicon electro-optic modulator disclosed by the invention works in a bias voltage state, the ITO carrier concentration is increased, a mode effective refractive index and an absorption coefficient in the corresponding sub-line waveguide change, the coupling efficiency and the attenuation coefficient of the directional coupler change accordingly, the bus waveguide and the sub-line waveguide are weakly coupled or not coupled, an optical signal is directly input and output from the silicon waveguide, and at this time, the light intensity at an output end is the largest; and when the silicon electro-optic modulator works in a non-bias voltage state, the bus waveguide is strongly coupled with the sub-line waveguide, the optical energy entering the sub-line waveguide is completely lost, and at thetime, the output light intensity from the output end of the silicon waveguide is the lowest. The silicon electro-optic modulator disclosed by the invention overcomes the own high loss technical problem of an ITO material, has the characteristics of the low loss, small size, low power consumption and the like, and meets the actual needs in the fields of optical communication, integrated optics andthe like.
Description
technical field [0001] The invention belongs to a planar optical waveguide integrated device, in particular to a silicon electro-optic modulator based on an ITO (transparent conductive oxide) directional coupler. Background technique [0002] In recent years, radar and electronic countermeasures, wireless communication and other information systems are developing rapidly in the direction of broadband, integration and miniaturization. These information systems have strict requirements on the optical link. The electro-optical modulator is the core device in the optical link. It converts the electrical signal into an optical signal to realize the electro-optical conversion. It needs to have high bandwidth, low half-wave voltage, and low insertion loss. ,Small size. Commonly used electro-optic modulator structures such as Mach-Zehnder interferometer (MZI) and ring resonator structures have been intensively studied in various silicon optical modulator structures, by changing the...
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IPC IPC(8): G02F1/03G02F1/035G02B6/12
CPCG02B6/12G02B2006/12142G02B2006/12147G02F1/0305G02F1/0316G02F1/035
Inventor 戴道锌宋立甲
Owner ZHEJIANG UNIV