Organic thin film transistor and preparation method thereof and display device

An organic thin film and transistor technology, applied in the fields of organic thin film transistors and their preparation methods and display devices, can solve the problems of poor mechanical/thermal stability and mismatch of mechanical/thermal stability, etc., to reduce thermal expansion coefficient and avoid transfer failure Complete, improve the effect of electrical contact and service life

Active Publication Date: 2020-02-07
XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the technical problems existing in the prior art, the present invention provides an organic thin film transistor and its preparation method to solve the problem of poor mechanical/thermal stability of the existing polymer template and the gap

Method used

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  • Organic thin film transistor and preparation method thereof and display device
  • Organic thin film transistor and preparation method thereof and display device
  • Organic thin film transistor and preparation method thereof and display device

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0035] The present invention provides a method for preparing an organic thin film transistor. The surface of a source / drain mold and a gate mold are respectively filled with a sufficient amount of nanoparticles to obtain a source / drain mold and a gate mold filled with nanoparticles; The surface of the source / drain mold and the gate mold with nanoparticles is poured with polymer solution. After curing, the mold is turned over to transfer the nanoparticles with the polymer to obtain the source / drain template and the grid template; using sputtering technology, Source / drain template prepares the source / drain metal layer, prepares the gate metal layer on the surface of the gate template; uses the hot embossing method to transfer the source / drain metal layer to the flexible substrate with the organic semiconductor layer , Forming a flexible substrate for transferring the active / drain metal layer; using spin coating to prepare an insulating layer on the transferred source / drain metal l...

Example Embodiment

[0051] Example 1

[0052] Embodiment 1 provides a method for preparing an organic thin film transistor, which includes the following steps:

[0053] Step 1. Select a highly doped silicon wafer as a hard substrate, and use etching technology to etch the micron source / drain array structure on the highly doped silicon wafer to obtain a source / drain mold; a micron source / drain array structure The size feature is: length×width×depth=50×30×25μm;

[0054] Select a highly doped silicon wafer as the hard substrate, and use etching technology to etch the micron gate array structure on the highly doped silicon wafer to obtain a gate mold; the size characteristics of the micron gate array structure are: length×width×depth =12×40×25μm;

[0055] Step 2. Use acetone, ethanol and deionized water to ultrasonically clean the source / drain molds or grid molds in step 1, and dry them with nitrogen to make the surface clean;

[0056] Step 3. Fill the surface of the source / drain mold with a sufficient amoun...

Example Embodiment

[0068] Example 2

[0069] Embodiment 2 provides a method for preparing an organic thin film transistor, which includes the following steps:

[0070] Step 1. Select a highly doped silicon wafer as a hard substrate, and use etching technology to etch the micron source / drain array structure on the highly doped silicon wafer to obtain a source / drain mold; a micron source / drain array structure The size feature is: length×width×depth=8×5×1μm;

[0071] Select a highly doped silicon wafer as the hard substrate, and use etching technology to etch the micron gate array structure on the highly doped silicon wafer to obtain a gate mold; the size characteristics of the micron gate array structure are: length×width×depth =3×8×1μm;

[0072] Step 2. Use acetone, ethanol and deionized water to ultrasonically clean the source / drain molds or grid molds in step 1, and dry them with nitrogen to make the surface clean;

[0073] Step 3. Fill the surface of the source / drain mold with a sufficient amount of t...

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Abstract

The invention discloses an organic thin film transistor and a preparation method thereof and a display device. The method comprises the following steps: pouring a polymer solution on a source/drain mold and a gate mold which are filled with nano particles, and turning the molds over after curing to obtain a source/drain template and a gate template; preparing metal layers on the surfaces of the source/drain template and the gate template; transferring the source/drain metal layer to a flexible substrate, and preparing an insulating layer on the metal layer of the flexible substrate; aligning the gate metal layer with the flexible substrate provided with the insulating layer; and transfer-printing the gate metal layer on the insulating layer of the flexible substrate to obtain the organic thin film transistor. According to the invention, the Young modulus of the polymer template is improved and the coefficient of thermal expansion of the polymer template is reduced by increasing the content of nanoparticles in the source/drain (or gate) of the polymer template organic thin film transistor, mechanical deformation and thermal deformation of the polymer template in the transfer printing process are limited, efficient and accurate transfer printing of the organic thin film transistor is realized, and therefore, an organic thin film transistor device with good electrical contact is produced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor fabrication, and in particular relates to an organic thin film transistor, a preparation method thereof, and a display device. Background technique [0002] Organic thin film transistors can be used in mobile phone flexible screens, flexible microelectronic circuits, wearable sensors and other fields. Polymer templates with excellent mechanical / thermal properties have attracted much attention in organic thin film transistor transfer printing technology; existing polymer templates have Low Young's modulus and high thermal expansion coefficient lead to poor mechanical and thermal stability, which directly affect the alignment accuracy and transfer quality of organic thin film transistors. [0003] At present, the traditional method to improve the mechanical / thermal stability of polymer templates is to directly dope nanoparticles in polymers. However, the dispersion of nanoparticles in polymers...

Claims

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Application Information

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IPC IPC(8): H01L51/40H01L51/05B82Y30/00
CPCB82Y30/00H10K71/18H10K10/464
Inventor 叶向东田波
Owner XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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