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Preparation method and application of three-dimensional dendritic crystal porous silicon

A three-dimensional dendrite, porous silicon technology, applied in silicon and other directions, can solve the problems of high price of powder materials, difficult to control the morphology and structure of metallographic porous silicon materials, uneven particle size, etc., to reduce production costs, control and The experimental conditions are easy to control and the effect of solving the bottleneck problem of industrialization

Active Publication Date: 2020-02-11
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the raw materials used in the preparation methods of these porous silicon materials are alloy powders or pure metal powder materials. The disadvantages are that the price of the powder materials is high and the particle size is uneven, and the metallographic structure of the powder materials and the morphology of the subsequently prepared porous silicon materials are difficult to achieve. control

Method used

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  • Preparation method and application of three-dimensional dendritic crystal porous silicon
  • Preparation method and application of three-dimensional dendritic crystal porous silicon
  • Preparation method and application of three-dimensional dendritic crystal porous silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The preparation method includes the following steps:

[0032] S1. Precursor alloy preparation: take an appropriate amount of aluminum-silicon alloy, use melting equipment to melt the aluminum-silicon alloy to obtain a liquid aluminum-silicon alloy, subject the obtained liquid aluminum-silicon alloy to appropriate melt treatment, and then regulate the cooling of the melt Speed ​​and pouring to obtain the sample, the obtained sample is processed by wire cutting and pre-grinding to obtain a precursor alloy with a thickness of 5μm~500μm;

[0033] S2, the precursor alloy with a thickness of 5 μm to 500 μm obtained in step S1 is placed in an etching solution for dealloying treatment to obtain a dealloyed sample;

[0034] S3. Subsequent treatment: Wash the dealloyed sample obtained in step S2 repeatedly with deionized water for 100s~300s, then put it in absolute ethanol and clean it with ultrasonic for 6~15min to remove remaining impurities and attachments Finally, put the wet sampl...

Embodiment 2

[0036] The preparation method includes the following steps:

[0037] S1. Preparation of precursor alloy: take appropriate amount of Al-7Si binary alloy without any melt treatment, pour into graphite mold to obtain the required precursor alloy sample, and cut the sample into 15mm diameter and 500μm thickness by wire cutting The flakes were polished with 800#, 1200#, and 2000# sandpaper respectively, and then polished with a polishing machine until bright, to obtain a precursor alloy with a thickness of 200μm.

[0038] S2, dealloying treatment: the precursor alloy obtained in step S1 is placed in a sodium hydroxide solution with a concentration of 1.0 mol / L for chemical dealloying treatment to obtain a dealloying sample. The process parameters are as follows: the dealloying temperature is 25°C , The time of dealloying is 24h, and ultrasonic oscillation is supplemented during the dealloying process.

[0039] S3. Subsequent treatment: Wash the dealloyed sample obtained in step S2 repeat...

Embodiment 3

[0042] The preparation method includes the following steps:

[0043] S1. Preparation of precursor alloy: take an appropriate amount of Al-7Si binary alloy, use melting equipment to melt the aluminum-silicon alloy to obtain a liquid aluminum-silicon alloy, and add a certain amount of Al-10Sr master alloy to melt the liquid aluminum-silicon alloy After treatment, the liquid aluminum-silicon alloy is poured into the graphite mold to obtain the required precursor alloy sample. The sample is cut into 15mm diameter and 500μm thick slices by wire cutting, and then polished with 800#, 1200# and 2000# sandpaper respectively. , And then polished to bright with a polishing machine to obtain a precursor alloy with a thickness of 200 μm.

[0044] S2, dealloying treatment: the precursor alloy obtained in step S1 is placed in a hydrochloric acid solution with a concentration of 1.0 mol / L for chemical dealloying treatment to obtain dealloying samples. The process parameters are as follows: dealloy...

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Abstract

The invention provides a preparation method and application of three-dimensional dendritic crystal porous silicon, and belongs to the field of porous silicon preparation. The preparation method has the technical scheme that the preparation method comprises the following steps of Step 1, preparing a precursor alloy; Step 2, putting the precursor alloy, with the thickness being 5 mum to 500 mum, obtained in the Step 1 into corrosion liquid to be subjected to dealloying treatment for obtaining a dealloyed specimen; and Step 3, performing subsequent treatment to obtain a three-dimensional micrometer / nanometer dendritic crystal structure porous silicon material. The preparation method and the application of the three-dimensional dendritic crystal porous silicon have the beneficial effects thatcasting aluminum-silicon alloys commonly used in production are used as raw materials, so that the production cost is greatly reduced; meanwhile, the difficult problem that for powder materials, precursor alloy metallographic structures are difficult to control and to further regulate and control for finally preparing the structure and morphology of the porous silicon material can be solved; theprecursor alloy structure regulation and control and the experiment conditions are easy to control, so that the problem of industrialization bottleneck of low-cost energy storage can be solved; and good commercial prospects are realized.

Description

Technical field [0001] The invention relates to the field of porous silicon preparation, in particular to a method for preparing three-dimensional dendritic porous silicon. Background technique [0002] With the development of clean energy technologies and industries such as solar and wind energy, there is an urgent need for the development of low-cost and high-capacity energy storage technologies. Compared with traditional lead-acid batteries, nickel-metal hydride batteries and other batteries, secondary energy storage devices represented by lithium-ion batteries have high working voltage, high energy density, light weight, no memory effect, high and low temperature adaptability, and It has been widely used due to its advantages of green and environmental protection. Although graphite is the most commercialized negative electrode material for energy storage devices, its theoretical specific capacity is 372mAh·g -1 , Its energy density has been unable to meet the demand. At pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/02
CPCC01B33/02Y02E60/10
Inventor 许荣福孔凡涛李彦许广池李常厚时月亚徐勇王志刚
Owner SHANDONG JIANZHU UNIV
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