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Solder piece for segmental thermoelectric device connection and preparation method thereof

A thermoelectric device and solder tab technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric device components, thermoelectric devices using only Peltier or Seebeck effects, etc., to simplify connection procedures and avoid adverse effects.

Active Publication Date: 2021-08-31
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] In order to solve the existing problems of connecting segmented thermoelectric devices with solder, the present invention provides a solder piece for connecting segmented thermoelectric devices and its preparation method

Method used

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  • Solder piece for segmental thermoelectric device connection and preparation method thereof
  • Solder piece for segmental thermoelectric device connection and preparation method thereof
  • Solder piece for segmental thermoelectric device connection and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] For the semi-Hausler (use temperature ~800°C) / skutterudite (~550°C) / bismuth telluride (~250°C) three-stage thermoelectric device, the low melting point metal tin (Sn) and the high melting point nickel ( Ni), tin foil thickness 50μm, tin powder particle size ~ 20μm, nickel powder particle size ~ 30μm, according to the Ni-Sn binary phase diagram ( figure 2 , the mass percentage of Sn is 40.3wt%) to generate Ni 3 Configure the tin powder and nickel powder according to the ratio of Sn, place it in a mixer, and mechanically mix it for 10 hours at a speed of 180r / min to obtain a uniform mixed powder;

[0057] Weigh an appropriate amount of the nickel-tin mixed powder, spread evenly on the tin foil (control the addition 0.17g / cm 2 ), and covered with tin foil, placed in a mold with an inner diameter of 30 mm and a press, and applied a pressure of 20 MPa for 5 minutes to form the solder sheet, as image 3 As shown, the thickness of B in the solder piece is 140μm;

[0058] D...

Embodiment 2

[0060] For silicon germanium (use temperature ~ 1000°C) / skutterudite (~550°C) / bismuth telluride (~250°C) three-stage thermoelectric devices, use low melting point metal tin (Sn) and high melting point nickel (Ni) , the thickness of tin foil is 50 μm, the particle size of tin powder is ~20 μm, and the particle size of nickel powder is ~30 μm, according to the Ni-Sn binary phase diagram ( image 3 , the mass percent of Sn is 59.73wt%) to generate Ni 3 sn 2 Configure the tin powder and nickel powder according to the ratio, place it in a mixer, and mechanically mix it for 10 hours at a speed of 180r / min to obtain a uniform mixed powder;

[0061] Weigh an appropriate amount of the nickel-tin mixed powder, spread evenly on tin foil (control addition 0.14g / cm 2 ), and covered with tin foil, placed in a mold with an inner diameter of 30 mm and a press, and applied a pressure of 20 MPa for 5 minutes to form the solder sheet, and the thickness of B in the solder sheet is 130 μm;

[0...

Embodiment 3

[0064] The tetrahedrite thermoelectric material contains sulfur, and the conventional brazing is used to connect the electrodes. The sulfur is easily lost, resulting in a significant decline in the thermoelectric performance of the material, and the preparation of the tetrahedrite thermoelectric device is very difficult. For tetrahedrite (~400°C) / bismuth telluride (~250°C) two-stage thermoelectric devices, low melting point metal tin (Sn) and high melting point tellurium (Te) are selected, the thickness of tin foil is 50 μm, and the particle size of tin powder is ~ 10μm, nickel powder particle size ~ 10μm, according to Te-Sn binary phase diagram ( Figure 5 , the mass percentage of Sn is 48.2wt%) to generate the ratio of SnTe to configure the tin powder and tellurium powder, and place it in a mixer, mechanically mix 20h at a rate of 250r / min to obtain a uniform mixed powder;

[0065] Weigh an appropriate amount of the mixed tellurium-tin powder, spread evenly on the tin foil (...

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Abstract

The invention relates to a solder sheet for connecting segmented thermoelectric devices and a preparation method thereof. The solder sheet has a three-layer structure of A / B / A, wherein A is a metal layer composed of low melting point components, and B is a low melting point component and high melting point components; the low melting point components are selected from at least one of lead and its alloys, tin and its alloys, indium and its alloys, zinc and its alloys, aluminum and its alloys, the The high melting point component is at least one element selected from titanium, chromium, iron, cobalt, nickel, copper, germanium, zirconium, silver, gold, platinum, tellurium, antimony, niobium, and cobalt. The A / B / A three-layer structure welding sheet of the present invention is formed into a whole through pressure processing, can be cut freely, and can be conveniently used for the connection of thermoelectric materials and the connection between formed thermoelectric devices.

Description

technical field [0001] The invention relates to a welding piece for connecting segmented thermoelectric devices and a preparation method thereof, belonging to the technical field of thermoelectric power generation. Background technique [0002] Thermoelectric power generation technology uses the Seebeck effect of thermoelectric semiconductor materials to directly convert heat energy into electrical energy. It has the characteristics of small system size, compact structure, no moving parts, maintenance-free, no noise, no emissions, high reliability and long life. It has obtained important applications in space detection power supply and special military power supply, and has broad application prospects and potential economic and social benefits in solar photovoltaic-thermoelectric composite power generation, industrial waste heat—especially automobile exhaust waste heat recovery thermoelectric power generation. [0003] The key component of thermoelectric power generation tec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/08H01L35/32H01L35/34
CPCH10N10/817H10N10/01H10N10/17
Inventor 李小亚王维安顾明夏绪贵廖锦城吴洁华邢云飞陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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