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Method for adsorbing and removing silicon from nickel solution

A nickel solution and solution technology, applied in the field of deep silicon removal, can solve the problems of increasing the burden of impurity removal and not being able to achieve deep desiliconization, and achieve the effect of industrialized continuous production, high direct yield and simple process

Inactive Publication Date: 2020-02-21
JINCHUAN GROUP LIMITED +1
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  • Description
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Problems solved by technology

[0006] The silicon removal methods in the above patents and articles are mainly aimed at the removal of impurity silicon in other high-silicon solutions. The method of deep silicon removal in nickel solutions has not been reported yet, and the silicon content in the solution after the above method is still 0.2 More than g / L, this type of method cannot achieve the purpose of deep desiliconization; at the same time, the addition of silicon removal agent during the impurity removal process will introduce other impurity ions into the solution, increasing the burden of impurity removal in subsequent processes

Method used

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  • Method for adsorbing and removing silicon from nickel solution
  • Method for adsorbing and removing silicon from nickel solution
  • Method for adsorbing and removing silicon from nickel solution

Examples

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Effect test

Embodiment 1

[0016] Weigh 5g of sodium hydroxide, add 20mL of water to prepare a 250g / L sodium hydroxide solution, use nickel sulfate crystals (99% purity) to prepare a nickel sulfate solution with a concentration of 25g / L, take 300mL of nickel sulfate solution, and heat to 50°C , while stirring, add the prepared sodium hydroxide solution, stir and react for 2 hours, carry out vacuum filtration, and wash the nickel hydroxide colloid precipitate with hot pure water for 2 to 3 times after solid-liquid separation. Take 1L of silicon-containing nickel sulfate solution, heat it to 50°C, add the above-mentioned nickel hydroxide colloidal precipitation while stirring, stir and react for 2 hours, perform vacuum filtration, and wash the filter residue after solid-liquid separation with hot pure water 2 to 3 times. The comparison of solution indicators before and after silicon removal is shown in Table 1. The nickel yield calculated from the volume of the solution before and after silicon removal an...

Embodiment 2

[0020] Weigh 8g of sodium hydroxide, add 20mL of water to prepare a 400g / L sodium hydroxide solution, use nickel sulfate crystals to prepare a nickel sulfate solution with a concentration of 20g / L, take 600mL of nickel sulfate solution, heat to 80°C, and stir Add the prepared sodium hydroxide solution, stir and react for 2 hours, then carry out suction filtration under reduced pressure, and wash the nickel hydroxide colloidal precipitate after solid-liquid separation with hot pure water for 2 to 3 times. Take 2L of silicon-containing nickel chloride solution, heat it to 80°C, and add the above-mentioned nickel hydroxide colloidal precipitation while stirring. After stirring and reacting for 3 hours, carry out vacuum filtration, and the filter residue after solid-liquid separation is washed with hot pure water for 2~3 Second-rate. The comparison of solution indexes before and after silicon removal is shown in Table 2. When the reaction temperature is high, the concentration of ...

Embodiment 3

[0024] Weigh 150g of sodium hydroxide, add 375mL of water to prepare a 400g / L sodium hydroxide solution, use nickel sulfate crystals to prepare a nickel solution with a concentration of 25g / L, take 9L of nickel sulfate solution, heat it to 70°C, and add it while stirring After the prepared sodium hydroxide solution was stirred and reacted for 2 hours, vacuum filtration was performed, and the nickel hydroxide colloid precipitate after solid-liquid separation was washed with hot pure water for 2 to 3 times. Take 70L of silicon-containing nickel-cobalt sulfate solution, heat it to 70°C, add the prepared sodium hydroxide solution while stirring, stir and react for 5 hours, then carry out pressure filtration, and wash the filter residue after solid-liquid separation with hot pure water for 2~3 Second-rate. The comparison of solution indexes before and after silicon removal is shown in Table 3. When the reaction temperature is high, the concentration of nickel in the solution after ...

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Abstract

The invention relates to a method for adsorbing and removing silicon from a nickel solution. According to the method, a prefabricated colloidal nickel hydroxide precipitate is used as an adsorbent, and adsorbs a silica gel in a nickel solution under a certain condition, and solid-liquid separation is performed to achieve the purpose of deep silicon removal, wherein the silicon content in the nickel solution can be reduced to less than 0.005 g / L from about 1 g / L, and the yield of the valuable metal nickel is more than 99%. According to the invention, the method for deep purification and siliconremoval is simple and easy to implement, other impurities cannot be introduced, the direct recovery rate of the valuable metal is high, the next procedure is facilitated, and the industrial continuous production can be achieved.

Description

technical field [0001] The invention relates to the technical field of nickel production, and relates to a method for deeply removing silicon from nickel solution by using nickel hydroxide colloid. Background technique [0002] The nickel solution obtained in nickel hydrometallurgy contains impurities such as cobalt, calcium, magnesium, lead, and silicon. Usually, the cobalt, calcium, magnesium, and lead are targeted for removal of impurities by extraction and precipitation methods before being used for nickel plates And the preparation of nickel salt crystals, but there is no corresponding treatment process for impurity silicon, and the silicon content in the system is maintained between 0.1 and 1g / L. With the continuous application of nickel salt products in lithium-ion battery cathode materials, the requirements for its impurity content are getting higher and higher, especially impurity silicon, which will inevitably be reintroduced in the production process, so the requi...

Claims

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Application Information

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IPC IPC(8): B01D15/08C01G53/04C01G53/10C01G53/09
CPCB01D15/08C01G53/04C01G53/09C01G53/10
Inventor 王甲琴胡家彦李兰兰柴艮风王国超陈天翼王杰伟张明兰
Owner JINCHUAN GROUP LIMITED
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