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Titanium-doped yttrium zirconate buffer layer material capable of effectively blocking oxygen diffusion and preparation method thereof

A technology of oxygen diffusion and buffer layer, which is applied in the direction of metal material coating process, coating, liquid chemical plating, etc. The effects of peeling, blocking the diffusion of oxygen elements, and improving the overall performance

Active Publication Date: 2021-09-10
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to La 2 Zr 2 o 7 There is a relatively large lattice mismatch with the NiW baseband, resulting in the La 2 Zr 2 o 7 There is a large lattice stress at the interface between the buffer layer and the NiW baseband, resulting in the La 2 Zr 2 o 7 The buffer layer is prone to peeling off during use, which reduces the overall performance of the HTS coated conductor

Method used

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  • Titanium-doped yttrium zirconate buffer layer material capable of effectively blocking oxygen diffusion and preparation method thereof
  • Titanium-doped yttrium zirconate buffer layer material capable of effectively blocking oxygen diffusion and preparation method thereof
  • Titanium-doped yttrium zirconate buffer layer material capable of effectively blocking oxygen diffusion and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Y that can effectively block oxygen diffusion 2 (Zr 0.3 Ti 0.7 ) 2 o 7 The preparation method of the buffer layer material is specifically implemented according to the following steps:

[0036] Step 1. Colloid preparation: Yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate are prepared according to the metal cation molar ratio Y: (Zr+Ti)=1:1, Zr:Ti=(1-0.7) : the molar ratio of 0.7 is dissolved in the solvent, calculated according to the total number of moles of metal ions, to obtain a precursor solution with a total metal ion concentration of 0.2 mol / L, where x=0.7;

[0037] In step 1, the solvent is a mixed reagent composed of absolute ethanol and ethylene glycol methyl ether with a volume ratio of 3:7; the chelating agent is phenylacetone.

[0038] Step 2, apply the precursor solution prepared in step 1 on the single crystal silicon substrate and perform appropriate heat treatment to obtain Y 2 (Zr 0.3 Ti 0.7 ) 2 o 7 Buffer la...

Embodiment 2

[0042] Y that can effectively block oxygen diffusion 2 (Zr 0.1 Ti 0.9 ) 2 o 7 The preparation method of the buffer layer material is specifically implemented according to the following steps:

[0043] Step 1. Colloid preparation: Yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate are prepared according to the molar ratio of metal cations Y: (Zr+Ti)=1:1, Zr:Ti=0.1:0.9 Dissolved in the solvent, calculated according to the total number of moles of metal ions, to obtain a precursor solution with a total metal ion concentration of 0.4mol / L, where x=0.9;

[0044] In step 1, the solvent volume ratio is a mixed reagent composed of ethylene glycol methyl ether and anhydrous methanol of 2:3; the chelating agent is acetylacetone;

[0045] Step 2, apply the precursor solution prepared in step 1 on the single crystal silicon substrate and perform appropriate heat treatment to obtain Y 2 (Zr 0.1 Ti 0.9 ) 2 o 7 The buffer layer;

[0046] The specifi...

Embodiment 3

[0049] Y that can effectively block oxygen diffusion 2 Ti 2 o 7 The preparation method of the buffer layer material is specifically implemented according to the following steps:

[0050] Step 1, colloid preparation: dissolve yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate in the solvent according to the molar ratio of metal cations according to Y:Ti=1:1, according to the total moles of metal ions Calculated to obtain a precursor solution with a total metal ion concentration of 0.2mol / L, where the value of x is 1;

[0051] In step 1, the solvent is absolute ethanol reagent; the chelating agent is phenylacetone;

[0052] Step 2, apply the precursor solution prepared in step 1 on the single crystal silicon substrate and perform appropriate heat treatment to obtain Y 2 Ti 2 o 7 The buffer layer.

[0053] The specific implementation steps of step 2 are: apply the precursor solution prepared in step 1 on the silicon substrate to form a gel c...

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Abstract

The invention discloses a titanium-doped yttrium zirconate buffer layer material that can effectively block oxygen diffusion, and uses a chemical solution deposition method to prepare a gel film containing corresponding metal elements and obtains a chemical composition of Y through heat treatment. 2 (Zr 1‑x Ti x ) 2 o 7 oxide film; and Ti 4+ Ions are doped into Y 2 Zr 2 o 7 A pyrochlore structure with an ordered arrangement of oxygen vacancies is formed in the crystal lattice of Y 2 (Zr 1‑x Ti x ) 2 o 7 Buffer material. The buffer layer material can effectively block the diffusion of oxygen element between the YBCO superconducting layer and the NiW metal base band. Its preparation method: step 1, colloid preparation: dissolving yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate in a solvent according to a certain molar ratio of metal cations to obtain a precursor solution; step 2, preparing in step 1 The obtained precursor liquid is coated on the monocrystalline silicon substrate and carries out appropriate heat treatment, makes Y 2 (Zr 1‑x Ti x ) 2 o 7 The buffer layer.

Description

technical field [0001] The invention relates to the technical field of application of high-temperature superconducting coating conductors, in particular to a titanium-doped yttrium zirconate buffer layer material that can effectively block oxygen diffusion, and also relates to a preparation method of the buffer layer material. Background technique [0002] High-temperature superconducting coated conductors usually include three parts: NiW metal base band, intermediate buffer layer and top yttrium barium copper oxide (YBCO) superconducting layer. Commonly used superconducting coated conductor buffer layer materials include CeO 2 , YSZ, La 2 Zr 2 o 7 , Y 2 o 3 Wait. Lanthanum Zirconate La 2 Zr 2 o 7 It is a rare earth zirconate with a pyrochlore structure and has been used in the field of superconducting buffer layers. However, due to La 2 Zr 2 o 7 There is a relatively large lattice mismatch with the NiW baseband, resulting in the La 2 Zr 2 o 7 There is a large...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1245C23C18/1254C23C18/1291
Inventor 雷黎李进展赵高扬
Owner XIAN UNIV OF TECH