Titanium-doped yttrium zirconate buffer layer material capable of effectively blocking oxygen diffusion and preparation method thereof
A technology of oxygen diffusion and buffer layer, which is applied in the direction of metal material coating process, coating, liquid chemical plating, etc. The effects of peeling, blocking the diffusion of oxygen elements, and improving the overall performance
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Embodiment 1
[0035] Y that can effectively block oxygen diffusion 2 (Zr 0.3 Ti 0.7 ) 2 o 7 The preparation method of the buffer layer material is specifically implemented according to the following steps:
[0036] Step 1. Colloid preparation: Yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate are prepared according to the metal cation molar ratio Y: (Zr+Ti)=1:1, Zr:Ti=(1-0.7) : the molar ratio of 0.7 is dissolved in the solvent, calculated according to the total number of moles of metal ions, to obtain a precursor solution with a total metal ion concentration of 0.2 mol / L, where x=0.7;
[0037] In step 1, the solvent is a mixed reagent composed of absolute ethanol and ethylene glycol methyl ether with a volume ratio of 3:7; the chelating agent is phenylacetone.
[0038] Step 2, apply the precursor solution prepared in step 1 on the single crystal silicon substrate and perform appropriate heat treatment to obtain Y 2 (Zr 0.3 Ti 0.7 ) 2 o 7 Buffer la...
Embodiment 2
[0042] Y that can effectively block oxygen diffusion 2 (Zr 0.1 Ti 0.9 ) 2 o 7 The preparation method of the buffer layer material is specifically implemented according to the following steps:
[0043] Step 1. Colloid preparation: Yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate are prepared according to the molar ratio of metal cations Y: (Zr+Ti)=1:1, Zr:Ti=0.1:0.9 Dissolved in the solvent, calculated according to the total number of moles of metal ions, to obtain a precursor solution with a total metal ion concentration of 0.4mol / L, where x=0.9;
[0044] In step 1, the solvent volume ratio is a mixed reagent composed of ethylene glycol methyl ether and anhydrous methanol of 2:3; the chelating agent is acetylacetone;
[0045] Step 2, apply the precursor solution prepared in step 1 on the single crystal silicon substrate and perform appropriate heat treatment to obtain Y 2 (Zr 0.1 Ti 0.9 ) 2 o 7 The buffer layer;
[0046] The specifi...
Embodiment 3
[0049] Y that can effectively block oxygen diffusion 2 Ti 2 o 7 The preparation method of the buffer layer material is specifically implemented according to the following steps:
[0050] Step 1, colloid preparation: dissolve yttrium nitrate hexahydrate, zirconium oxychloride octahydrate, and butyl titanate in the solvent according to the molar ratio of metal cations according to Y:Ti=1:1, according to the total moles of metal ions Calculated to obtain a precursor solution with a total metal ion concentration of 0.2mol / L, where the value of x is 1;
[0051] In step 1, the solvent is absolute ethanol reagent; the chelating agent is phenylacetone;
[0052] Step 2, apply the precursor solution prepared in step 1 on the single crystal silicon substrate and perform appropriate heat treatment to obtain Y 2 Ti 2 o 7 The buffer layer.
[0053] The specific implementation steps of step 2 are: apply the precursor solution prepared in step 1 on the silicon substrate to form a gel c...
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