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Silicon carbide polymer precursor ceramic defect healing method

A precursor and polymer technology, which is applied in the field of silicon carbide polymer precursor ceramic defect healing, can solve the problems of complicated operation, unfavorable promotion and application, and high equipment requirements, and achieves the effect of simple process, industrialized production, and fewer internal defects.

Active Publication Date: 2020-03-27
中科德胜(常州)电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the oxidation process is complicated to operate and requires high equipment, which is not conducive to popularization and application.

Method used

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  • Silicon carbide polymer precursor ceramic defect healing method
  • Silicon carbide polymer precursor ceramic defect healing method
  • Silicon carbide polymer precursor ceramic defect healing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1. Dissolve 1g polycarbosilane (PCS) powder, 1mL vinyltriethoxysilane (VTES) and 0.5mL castor catalyst in 20mL xylene to obtain a xylene solution, and disperse 0.01g GO powder in 20ml Aqueous solution in pure water;

[0029] 2. Mix the xylene solution and the aqueous solution, heat the mixed solution in a 60°C water bath and stir it with a magnetic stirrer, keep it warm for 30 minutes, let it stand after the reaction, take the upper liquid and spin evaporate it and grind it to obtain the precursor PVG powder;

[0030] 3. The SiC (rGO) green body was obtained by compression molding PVG powder, which was sintered at 1200°C in an atmosphere tube furnace under an argon atmosphere, kept for 30 minutes, and black 3D-SiC (rGO) was obtained after cooling in the furnace ceramics;

[0031] 4. Immerse the 3D-SiC(rGO) ceramics in the LPCS precursor for 24h, take it out and dry it, and then put it in N 2 Pyrolysis at 1200°C in the atmosphere, holding time 1h, and repeating 5 times...

Embodiment 2

[0034] 1. Dissolve 1g of PCS powder, 1mL of VTES and 0.5mL of Castel catalyst in 20mL of xylene to obtain a xylene solution, and disperse 0.01g of GO powder in 20ml of purified water to obtain an aqueous solution;

[0035]2. Mix the xylene solution and the aqueous solution, heat the mixed solution in a 60°C water bath and stir it with a magnetic stirrer, keep it warm for 30 minutes, let it stand after the reaction, take the upper liquid and spin evaporate it and grind it to obtain the precursor PVG powder;

[0036] 3. The SiC (rGO) green body was obtained by compression molding PVG powder, which was sintered at 1200°C in an atmosphere tube furnace under an argon atmosphere, kept for 30 minutes, and black 3D-SiC (rGO) was obtained after cooling in the furnace ceramics;

[0037] 4. Immerse the 3D-SiC(rGO) ceramics in the LPCS precursor for 24h, take it out and dry it, and then put it in N 2 Pyrolysis at 1200°C in the atmosphere, holding time 1h, and repeating 5 times to obtain ...

Embodiment 3

[0040] 1. Dissolve 1g polycarbosilane (PCS) powder, 1mL vinyltriethoxysilane (VTES) and 0.5mL castor catalyst in 20mL xylene to obtain a xylene solution, and disperse 0.01g GO powder in 20ml Aqueous solution in pure water;

[0041] 2. Mix the xylene solution and the aqueous solution, heat the mixed solution in a 60°C water bath and stir it with a magnetic stirrer, keep it warm for 30 minutes, let it stand after the reaction, take the upper liquid and spin evaporate it and grind it to obtain the precursor PVG powder;

[0042] 3. The SiC (rGO) green body was obtained by compression molding PVG powder, which was sintered at 1200°C in an atmosphere tube furnace under an argon atmosphere, kept for 30 minutes, and black 3D-SiC (rGO) was obtained after cooling in the furnace ceramics;

[0043] 4. Immerse the 3D-SiC(rGO) ceramics in the LPCS precursor for 24h, take it out and dry it, and then put it in N 2 Pyrolysis at 1200°C in the atmosphere, holding time 1h, and repeating 5 times...

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Abstract

The invention discloses a silicon carbide polymer precursor ceramic defect healing method, and relates to ceramic material preparation. The method comprises the steps: dissolving PCS powder, VTES anda Karstedt catalyst in xylene to obtain a xylene solution, and dispersing GO powder in water to obtain an aqueous solution; mixing the xylene solution with the aqueous solution; heating in water bathand stirring with a magnetic stirrer; after reaction, standing, taking an upper-layer liquid, carrying out rotary evaporation and grinding, to obtain precursor PVG powder; carrying out compression molding to obtain a SiC(rGO) biscuit; putting the biscuit into an atmosphere tubular furnace and sintering at high temperature in an argon atmosphere; and cooling along with a furnace to obtain a black 3D-SiC(rGO) ceramic; soaking the black 3D-SiC(rGO) ceramic in a liquid polycarbosilane precursor with relatively small molecular weight, taking out the black 3D-SiC(rGO) ceramic after soaking, airing,carrying out high-temperature cracking in an argon atmosphere, repeating the steps for multiple times to obtain soaked 3D-SiC(rGO) ceramic, and carrying out high-temperature oxidation in air at different temperatures to obtain the healing 3D-SiC(rGO) ceramic.

Description

technical field [0001] The invention relates to the preparation of ceramic materials, in particular to a method for healing defects in silicon carbide polymer precursor ceramics. Background technique [0002] Silicon carbide (SiC) material has a series of outstanding properties such as high hardness, high strength, high thermal conductivity, high electron mobility, corrosion resistance, wear resistance, high temperature resistance, not easy to aging, strong chemical stability and mechanical stability. Advantages, its high-temperature mechanical properties are also the best among known ceramic materials, and it can work normally under harsh conditions such as high temperature, high power, and high frequency. At present, silicon carbide ceramics have been widely used in industrial production, and have extremely broad application prospects in high-tech fields such as nuclear power, chemical industry, machinery, electronics, metallurgy, national defense, and aerospace. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622
CPCC04B35/571C04B35/573C04B2235/425
Inventor 姚荣迁郑艺浓黄雯燕林舒宇韩宇宸庄堃李凌杰朱烨琦郭鹏焕
Owner 中科德胜(常州)电子科技有限公司
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