A kind of silicon carbide polymer precursor ceramic defect healing method

A precursor and polymer technology, which is applied in the field of silicon carbide polymer precursor ceramic defect healing, can solve the problems of high equipment requirements, unfavorable promotion and application, complicated operation, etc. Effect
CN110922191BActive Publication Date: 2020-12-01中科德胜(常州)电子科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
中科德胜(常州)电子科技有限公司
Publication Date
2020-12-01

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Abstract

The invention discloses a silicon carbide polymer precursor ceramic defect healing method, and relates to ceramic material preparation. The method comprises the steps: dissolving PCS powder, VTES anda Karstedt catalyst in xylene to obtain a xylene solution, and dispersing GO powder in water to obtain an aqueous solution; mixing the xylene solution with the aqueous solution; heating in water bathand stirring with a magnetic stirrer; after reaction, standing, taking an upper-layer liquid, carrying out rotary evaporation and grinding, to obtain precursor PVG powder; carrying out compression molding to obtain a SiC(rGO) biscuit; putting the biscuit into an atmosphere tubular furnace and sintering at high temperature in an argon atmosphere; and cooling along with a furnace to obtain a black 3D-SiC(rGO) ceramic; soaking the black 3D-SiC(rGO) ceramic in a liquid polycarbosilane precursor with relatively small molecular weight, taking out the black 3D-SiC(rGO) ceramic after soaking, airing,carrying out high-temperature cracking in an argon atmosphere, repeating the steps for multiple times to obtain soaked 3D-SiC(rGO) ceramic, and carrying out high-temperature oxidation in air at different temperatures to obtain the healing 3D-SiC(rGO) ceramic.
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Description

technical field

[0001] The invention relates to the preparation of ceramic materials, in particular to a method for healing defects in silicon carbide polymer precursor ceramics. Background technique

[0002] Silicon carbide (SiC) material has a series of outstanding properties such as high hardness, high strength, high thermal conductivity, high electron mobility, corrosion resistance, wear resistance, high temperature resistance, not easy to aging, strong chemical stability and mechanical stability. Advantages, its high-temperature mechanical properties are also the best among known ceramic materials, and it can work normally under harsh conditions such as high temperature, high power, and high frequency. At present, silicon carbide ceramics have been widely used in industrial production, and have extremely broad application prospects in high-tech fields such as nuclear power, chemical industry, machinery, electronics, metallurgy, national defense, and aerospace.

[0003] ...

Claims

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