Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Simulation method for optical characteristics of cesium tin bromide-molybdenum disulfide composite material

A technology of molybdenum disulfide and optical properties, which is applied in the field of materials science, can solve the problems of insufficient optical properties and low carrier mobility of cesium tin bromine, and achieve improved carrier mobility, excellent environmental protection, and improved optical properties. The effect of the characteristic

Active Publication Date: 2020-03-27
NORTHWEST UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for simulating the optical properties of cesium tin bromide-molybdenum disulfide composite materials to solve the environmental problems of existing lead-containing perovskites and improve the Solved the problems of low carrier mobility and poor optical properties of cesium tin bromine

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Simulation method for optical characteristics of cesium tin bromide-molybdenum disulfide composite material
  • Simulation method for optical characteristics of cesium tin bromide-molybdenum disulfide composite material
  • Simulation method for optical characteristics of cesium tin bromide-molybdenum disulfide composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Comply with above-mentioned technical scheme, present embodiment provides a kind of CsSnBr 3 / MoS 2 Composite model and CsSnBr 3 A method for improving optical properties, the perovskite used is CsBr-CsSnBr 3 (100) surfaces. The specific steps are:

[0046] S1. In the Materials Studio 2017 software, respectively establish 7 layers of CsBr-CsSnBr 3 (100) surface and monolayer molybdenum disulfide (MoS 2 ) model, such as figure 1 As shown, simulated by the CASTEP module in the Materials Studio 2017 software package;

[0047] S2. To illustrate the van der Waals interaction between cesium tin bromide and molybdenum disulfide, a hybrid semi-empirical solution of OBS is applied in DFT-D to introduce damping atom pairwise dispersion correction.

[0048] The configuration of the valence atom is 4d for the Mo atom 5 5s 1 , the S atom is 3s 2 threesome 4 , Cs atom is 5s 2 5p 6 6p 1 , the Sn atom is 4d 10 5s 2 5p 2 , Br atom is 4s 2 4p 5 .

[0049] The cut-off ...

Embodiment 2

[0065] Comply with above-mentioned technical scheme, present embodiment provides a kind of CsSnBr 3 / MoS 2 Composite model and CsSnBr 3 A method for improving optical properties, the perovskite used is SnBr 2 -CsSnBr 3 (100) surfaces. The specific steps are:

[0066] Step S1 and step S2 are the same as in embodiment 1, except that the surfaces of the two cases are different.

[0067] The above results are analyzed as follows:

[0068] MoS 2 The energy band structure diagram is as Figure 5 As shown in (a), SnBr 2 -CsSnBr 3 (100) The surface energy band structure diagram is as follows Figure 5 As shown in (c), SnBr 2 / MoS 2 Composite model energy band structure diagram as shown in Figure 5 (e) shown. MoS 2 and SnBr 2 -CsSnBr 3 The surface of (100) shows a direct band gap, and after forming a heterojunction, the bottom of the conduction band is mainly composed of MoS 2 contribution, the valence band top is mainly composed of CsSnBr 3 contribution, and simila...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a simulation method for optical characteristics of a cesium tin bromide-molybdenum disulfide composite material. The simulation method comprises the steps: building a seven-layers cesium-tin-bromide surface model and a single-layer molybdenum disulfide model through employing a Project module of Materials Studio; optimizing the seven-layer cesium-tin-bromine surface model and the single-layer molybdenum disulfide model; constructing a CsBr / MoS2 van der Waals combined composite model by using the optimized seven-layer cesium-tin-bromide surface and the single-layer molybdenum disulfide model; and calculating the energy band structure and the differential charge density of the composite model, analyzing the Millikan charge layout, the light absorption and the photoconductive property, obtaining the optical characteristic improvement result of the heterostructure relative to the non-heterostructure, and completing the simulation. The simulation method compounds theperovskite CsSnBr3 with MoS2 by virtue of simulation, and improves the electron transmission characteristic of CsSnBr3 and the separation efficiency of photon-generated carriers, and the built CsSnBr3 / MoS2 van der Waals heterojunction composite model improves the optical characteristics of CsSnBr3, and provides mechanism explanation for preparation of related devices in experiments.

Description

technical field [0001] The invention belongs to the technical field of materials science, and specifically relates to a simulation method for the optical characteristics of a cesium tin bromide / molybdenum disulfide composite material, especially for the construction of a theoretical model of a cesium tin bromide / molybdenum disulfide composite material, heterojunction and The energy band structure change, differential charge density, Millikan charge layout analysis, light absorption and photoconductivity properties of non-heterojunction are simulated. Background technique [0002] Molybdenum disulfide (MoS 2 ) as the electron transport layer, cesium lead bromide (CsPbBr 3 ) as a light absorber that can greatly improve the CsPbBr-based 3 The optoelectronic performance of optoelectronic devices. However, due to the toxicity and non-environmental protection of lead, the application of such devices is limited. Replacing lead elements with tin elements to build devices has bec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F30/20G16C60/00G16C20/80
CPCG16C20/80G16C60/00
Inventor 贠江妮樊浩东满振武杨锦张艳妮郭铭芷
Owner NORTHWEST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products