Structure of novel digital gate integrated circuit

Abstract

The invention discloses a structure of a novel digital gate integrated circuit, and relates to the technical field of semiconductor devices and integrated circuits. The structure of the novel digitalgate integrated circuit is a longitudinal N-type or P-type TMOS, and a source region, a semiconductor channel region and a drain region are respectively arranged in the longitudinal direction; a gateregion surrounds the periphery in the horizontal direction, a gate dielectric layer is arranged between a gate and a channel semiconductor region, and a bottom drain region can be led out from the outer side through a lead hole. The basic unit can be used for forming an AND gate, an NAND gate or a NOR gate. The key technical problem to be solved by the invention is to provide the structure of thenovel digital gate integrated circuit. The gate of the structure surrounds the device body region, and when proper bias is applied to the gate, four channels are formed so that the gate control capability is improved, and the current density during conduction is improved. The channel region of the novel structure is not completed by a photoetching process, and the length of the channel is not limited by photoetching precision any more. Meanwhile, a narrow bandgap material is adopted as the source region, and an N-drift region structure is added to the front end of the drain region so that small area, large current and low on resistance of the device are realized, and the integration level of the integrated circuit is improved.

Description

technical field [0001] The present invention relates to microelectronic technology and semiconductor technology. Background technique [0002] For decades, researchers and designers of microelectronics have been trying to keep up with Moore's Law, and in recent years, we are getting closer and closer to the ceiling of Moore's Law. The optimization of the digital circuit architecture itself cannot solve this problem for a long time, and changing the device itself is the long-term solution to achieve a breakthrough [1] . [0003] Silicon and germanium are the first semiconductor materials discovered by people, and are recognized as the first-generation semiconductor materials. The properties of the two are similar, but the forbidden band width of germanium is smaller than that of silicon. SiGe / Si heterojunction materials have many unique properties. The epitaxial SiGe alloy greatly improves the performance of Si materials without changing the line width of the existing proc...

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However, the technology of FINFET still relies on methods such as multiple exposures to achieve ultr

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