Preparation method for modified graphene microchip wave-absorbing composite powder through nickel-cobalt particles
A graphene microchip, nickel-cobalt alloy technology, applied in metal processing equipment, metal material coating process, liquid chemical plating and other directions, can solve the problem that graphene cannot fully meet the performance and other problems
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Embodiment 1
[0016] Embodiment 1: a kind of preparation method of the surface deposition metal nickel-cobalt alloy particle of graphene microchip, it carries out as follows: first carry out activation pretreatment to graphene microchip, Graphene microchip is soaked in the nitric acid of 1:1 In the solution, disperse under mechanical stirring for 12 hours, then wash the nitric acid solution to pH>5, filter the graphene microchip solution and take it out for later use; take the cobalt salt solution, and the solution components are as follows: nickel sulfate 4g / L, cobalt sulfate 8g / L, sodium citrate 60g / L, boric acid 30g / L, sodium hypophosphite 53g / L, pH 9~10. Disperse the filtered graphene microflakes after acidification into the above-mentioned salt solution, and disperse them together by mechanical stirring and ultrasonic vibration, the ultrasonic power is 300W, and the mechanical stirring rate is 2000r / min. Then put the dispersed graphene slurry into the reactor, and put the reactor into...
Embodiment 2
[0017] Embodiment 2: The difference between the present embodiment and Example 1 is that the nickel-cobalt salt solution composition: cobalt sulfate 28g / L, nickel sulfate 14g / L, potassium sodium tartrate 112g / L, ammonium sulfate 66g / L, hypophosphorous acid Sodium 21g / L, pH 9~10. Other steps and parameters are the same as in Example 1.
Embodiment 3
[0018] Embodiment 3: The difference between the present embodiment and Example 1 is that the nickel-cobalt salt solution composition: cobalt chloride 24g / L, nickel sulfate 12g / L, sodium citrate 120g / L, sodium tetraborate 6g / L, boron Potassium hydride 1.6g / L, pH 10~11. Reactor temperature 150 ℃, other steps and parameter are identical with embodiment 1.
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