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Method for preparing dielectric layer based on anisotropic wet etching, dielectric layer and flexible pressure sensor

A pressure sensor and wet etching technology, applied in the field of flexible sensors, can solve the problems of high manufacturing cost and single shape, and achieve the effects of low cost, strong flexibility and high sensitivity

Inactive Publication Date: 2020-05-08
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing a dielectric layer based on anisotropic wet etching to address the defects of single shape and high manufacturing cost in the prior art by using a photolithography template to turn over a mold to make a microstructure.

Method used

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  • Method for preparing dielectric layer based on anisotropic wet etching, dielectric layer and flexible pressure sensor
  • Method for preparing dielectric layer based on anisotropic wet etching, dielectric layer and flexible pressure sensor
  • Method for preparing dielectric layer based on anisotropic wet etching, dielectric layer and flexible pressure sensor

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Effect test

Embodiment 1

[0038] A method for preparing a dielectric layer based on anisotropic wet etching, comprising the following steps:

[0039] Step 1: Preparation of ion gel

[0040] According to the ratio of mass ratio of 1:7, polyvinylidene fluoride-hexafluoropropylene copolymer (P(VDF-HFP)) and acetone were added into the beaker, placed on a magnetic stirrer at room temperature, at a speed of 800r / min Stir for 1h. To prevent the volatilization of acetone, the beaker must be sealed with tin foil. After P(VDF-HFP) was completely dissolved in acetone, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide (abbreviated as [EMI][TFSA]) was added into the beaker as the ion Conductor, and continue to stir at room temperature at a speed of 800r / min for 1h, after the stirring is completed, the ion gel can be prepared.

[0041] Step 2: Make a template

[0042] First, add deionized water and HF solution into the beaker at a ratio of 1:9 by volume, and then put a silicon wafer (N-type single t...

Embodiment 3

[0055] Apply the method for preparing the dielectric layer in Example 1, wherein the immersion etching time in the template preparation step is changed from 60 min to 75 min, and the obtained dielectric layer is packaged into a flexible pressure sensor with the same conductive electrodes.

[0056] Such as image 3 , Figure 4 As shown, the curve numbered 3 is the sensitivity curve of the flexible pressure sensor, and the sensitivity is 78.2kPa at a pressure of 44Pa -1 , which is lower than that of the sensor with an etching time of 60 minutes. And when the pressure is 30kPa, the sensitivity is still 29.7kPa -1 , which is lower than that of the sensor with an etching time of 60 minutes. The flexibility of the sensor means that when the sensor is bent by 180°, it still works normally.

[0057] By adjusting the process parameters according to the content of the present invention, the dielectric layer of the present invention can be prepared, and exhibit the performance basica...

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Abstract

The invention discloses a method for preparing a dielectric layer based on anisotropic wet etching. The method comprises the steps of etching pyramid microstructures which are randomly distributed andhave different sizes on a silicon wafer by using an anisotropic wet etching principle of silicon, and taking the pyramid microstructures as a template to manufacture the dielectric layer with ridge-shaped microstructures which are randomly distributed in a staggered manner. The method is simple in preparation process, low in cost and suitable for batch production. A flexible capacitive sensor prepared by applying the dielectric layer has extremely high sensitivity and relatively high flexibility and can be bent randomly, the sensitivity is 145.5 kPa<-1> under the pressure intensity of 44 Pa,and when the pressure intensity is 30 kPa, the sensitivity is still 32.2 kPa<-1>. The flexibility of the sensor is shown as follows: when the sensor is bent by 180 degrees, the sensor can still work normally.

Description

technical field [0001] The invention relates to the technical field of flexible sensors, in particular to a method for preparing a dielectric layer based on anisotropic wet etching, a dielectric layer and a flexible pressure sensor. Background technique [0002] The structure of the capacitive pressure sensor is mainly divided into three parts: the upper and lower plates and the middle dielectric layer. By applying pressure to change the distance between the plates and the contact area between the plates and the dielectric layer, the capacitance value is changed, but this change is very limited, so people began to study new dielectric layer materials to speed up the change of capacitance value. In recent years, ion gels have gradually entered people's field of vision. It is composed of polymers and ionic liquids. Under the action of an external electric field, the non-volatile positive and negative ions inside will move up and down the plates, thereby forming an electric do...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L9/12C30B33/10C30B29/06
CPCC30B29/06C30B33/10G01L1/142G01L9/12
Inventor 邹强雷志明
Owner TIANJIN UNIV
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