Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing boron nitride nanosheet (BNNS) by efficiently stripping hexagonal boron nitride (h-BN)

A high-efficiency, h-bn technology, applied in the field of materials, can solve the problems of inability to obtain lamellar BNNS, BNNS structural damage, and low BNNS yield, and achieve the effects of less defects, low cost, and good dispersion

Inactive Publication Date: 2020-05-12
ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the strong van de Waals force between BN atomic layers and the force (lip-lip) with local ionic bonding properties, coupled with the extremely small interlayer distance (only BNNS is very easy to agglomerate, not easy to peel off from h-BN, and the ultrasonic power is too large or the ultrasonic time is too long, which will cause certain damage to the structure of BNNS itself, and it is impossible to obtain BNNS with large and thin sheets, which is not conducive to maintaining its excellent quality. thermal conductivity, resulting in a very low yield of practical BNNS

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing boron nitride nanosheet (BNNS) by efficiently stripping hexagonal boron nitride (h-BN)
  • Method for preparing boron nitride nanosheet (BNNS) by efficiently stripping hexagonal boron nitride (h-BN)
  • Method for preparing boron nitride nanosheet (BNNS) by efficiently stripping hexagonal boron nitride (h-BN)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The present invention is a method for efficiently stripping h-BN to prepare boron nitride nanosheets, the specific steps are as follows:

[0045] (1) Weigh 150 mg of sodium citrate dihydrate crystals and place them in a beaker, pour 15 ml of deionized water into it and stir to dissolve, then add 25 ml of isopropanol.

[0046](2) Weigh 150 mg of h-BN, add it to the beaker in step (1), stir and disperse it, put it into an ultrasonic cleaner for 2 hours, and set the power to 200W.

[0047] (3) Add the solution obtained by ultrasonication in step (2) into a hydrothermal reaction kettle (volume 100ml), react for 24 hours, and set the temperature at 180°C.

[0048] (4) After stirring the solution obtained from the reaction in step (3) evenly, put it into an ultrasonic cleaner for 3 minutes and set the power to 100W.

[0049] (5) The solution obtained in step (4) is subjected to low-speed centrifugation, the centrifuge speed is 1000rpm, and the time is 5min. After centrifugat...

Embodiment 2

[0054] The present invention is a method for efficiently stripping h-BN to prepare boron nitride nanosheets, the specific steps are as follows:

[0055] (1) Weigh 150 mg of sodium citrate and place it in a beaker, pour 10 ml of deionized water into it and stir to dissolve, then add 25 ml of DMF.

[0056] (2) Weigh 150 mg of h-BN, add it into the beaker of step (1), stir and disperse it, put it into an ultrasonic cleaner for 2 hours, and set the power to 200W.

[0057] (3) Add the solution obtained by ultrasonication in step (2) into a hydrothermal reaction kettle (volume 100ml), react for 24 hours, and set the temperature at 180°C.

[0058] (4) After stirring the solution obtained from the reaction in step (3) evenly, put it into an ultrasonic cleaner for 3 minutes and set the power to 100W.

[0059] (5) The solution obtained in step (4) is subjected to low-speed centrifugation, the centrifuge speed is 1000rpm, and the time is 5min. After centrifugation, the supernatant is ta...

Embodiment 3

[0064] The difference between this embodiment and embodiment 1 is only: do not add sodium citrate.

[0065] The TEM picture of the BNNS that the present embodiment makes is as Figure 10 As shown, the SEM picture is as Figure 11 shown. It can be seen that compared with Examples 1 and 2, the stripping effect of h-BN becomes worse, and the yield of BNNS obtained by centrifugation in this example is 20.8%, indicating that sodium citrate has a significant effect on the stripping effect of h-BN.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a BNNS by efficiently stripping h-BN. The method comprises the following steps: adding h-BN powder and a surfactant into a first solvent, and conductinguniform stirring to obtain a first dispersion liquid; carrying out ultrasonic treatment to obtain a second dispersion liquid; carrying out a hydrothermal reaction on the second dispersion liquid to obtain a third dispersion liquid; then carrying out ultrasonic treatment to obtain a fourth dispersion liquid; centrifuging the fourth dispersion liquid; carrying out centrifugal treatment on the obtained supernatant to obtain a precipitate, pouring a second solvent into the precipitate, carrying out uniform stirring, and carrying out ultrasonic treatment to obtain a fifth dispersion liquid; and repeatedly carrying out centrifugal treatment on the fifth dispersion liquid, removing impurities from the obtained precipitate, and carrying out vacuum drying to obtain the BNNS. According to the method, sodium citrate is used as the surfactant; ions are provided for intercalation; h-BN is efficiently stripped to prepare BNNS through cooperation of liquid-phase ultrasonic dispersion and a high-temperature and high-pressure reaction; the method is low in cost and easy to operate; required equipment and materials are simple and easy to obtain; yield is high; and product quality is good.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a method for efficiently stripping hexagonal boron nitride (h-BN) to prepare boron nitride nanosheets (BNNS). Background technique [0002] Boron nitride (BN) is a ceramic material with good chemical stability, oxidation resistance, high thermal conductivity, electrical insulation, and broad application prospects. Boron nitride is a crystal composed of nitrogen atoms and boron atoms. There are various crystal forms such as hexagonal, cubic, and amorphous. Among them, hexagonal boron nitride (h-BN) is the most common crystal form, which has a similar structure to graphite. Layered structure, so it is also called "white graphite". [0003] Boron nitride nanosheets (BNNS) are two-dimensional nanomaterials with a single-layer lattice structure similar to graphene, and have ultra-high thermal conductivity (about 2000W m -1 K -1 ), wide energy level gap (about 5.9eV), high therm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B21/064
CPCC01B21/0648C01P2004/03C01P2004/04C01P2004/20C01P2004/61
Inventor 王婷婷王国利罗兵傅明利黄若栋谢睿
Owner ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com