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Preparation method of composite p-n type heterojunction photocatalyst and VOCs photocatalytic degradation method

A photocatalyst and heterojunction technology, applied in chemical instruments and methods, physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, etc., can solve problems such as complicated operation and easy aggregation of silver particles , to achieve the effects of not easy to agglomerate, good stability, and high-efficiency photocatalytic degradation

Active Publication Date: 2020-06-05
HUAQIAO UNIVERSITY
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Problems solved by technology

There are certain deficiencies in the traditional methods: for example, the simple silver particles on the surface of the photocatalyst produced by the high-temperature calcination method are easy to agglomerate, and the simple silver particles on the surface of the photocatalyst produced by the photoinduced reduction method are of different sizes (ranging from a few nanometers to hundreds of nanometers). , the magnetron sputtering method is a physical loading method, and the operation is complicated
[0004] So far, the preparation of silver / silver oxide co-doped titania composite p-n type heterojunction photocatalyst and its application in the field of VOCs gas photocatalytic degradation have not been reported by a simple in situ precipitation reduction method.

Method used

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  • Preparation method of composite p-n type heterojunction photocatalyst and VOCs photocatalytic degradation method

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Embodiment 1

[0028] A preparation method of a composite p-n-type heterojunction photocatalyst in this embodiment, the preparation method includes the following steps:

[0029] (1) Under magnetic stirring, add 0.3 g of titanium dioxide to 35 mL of deionized water, and then add dropwise sodium hydroxide to adjust pH=8.5 after mixing evenly;

[0030] (2) the solution obtained in step (1) was purged with nitrogen and air-sealed, and then slowly dripped 0.14 mL of silver nitrate (168.3 g / L) to stir the solution for subsequent use;

[0031] (3) Add 1.4 mL of sodium borohydride (9.38 g / L) dropwise to the solution in (2), stir evenly, and let stand for 16 hours

[0032] (4) the material obtained after standing in step (3) is washed several times with deionized water and then freeze-dried to obtain a silver / silver oxide co-doped titanium dioxide composite p-n-type heterojunction photocatalyst, such as figure 1 (a), the surface of the catalyst is deposited with spherical nano-silver element, figur...

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Abstract

The invention discloses a preparation method of a composite p-n type heterojunction photocatalyst and a VOCs photocatalytic degradation method. The composite p-n type heterojunction photocatalyst is asilver / silver oxide co-doped titanium dioxide composite p-n type heterojunction photocatalyst, is prepared by an in-situ precipitation reduction method, silver series (Ag0 / Ag2O) co-doping is realized, the electron-hole separation efficiency of the catalyst is improved, and the photoresponse range is widened, so that the purpose of efficient and stable photocatalytic degradation of VOCs gas underthe ultraviolet-visible light condition is achieved.

Description

technical field [0001] The invention belongs to the technical field of composite catalysts, and particularly relates to a preparation method of a composite p-n-type heterojunction photocatalyst and a VOCs photocatalytic degradation method. Background technique [0002] Volatile organic pollutants (VOCs) are the main gas pollutants that affect human health and normal production and life. They have the characteristics of wide sources, great harm and difficult to control. Semiconductor-based photocatalytic oxidation (PCO) is a promising and environmentally friendly VOCs treatment technology, which can produce active compounds (hydroxyl, superoxide) with strong oxidizing ability under normal temperature and light irradiation conditions. free radicals and photogenerated holes), these actives can degrade macromolecular refractory organics into low-toxic or non-toxic small molecules, such as carbon dioxide and water. N-type semiconductor TiO2 is a common green, economical, chemica...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/50B01D53/86B01D53/44B01D53/72
CPCB01J23/50B01J23/002B01D53/8687B01D53/44B01D53/007B01D53/8668B01D53/72B01D2255/802B01D2257/708B01J35/399B01J35/393B01J35/23B01J35/39
Inventor 薛秀玲龚秀文陈小奕
Owner HUAQIAO UNIVERSITY
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