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Ultraviolet led epitaxial structure and preparation method thereof

An epitaxial structure, ultraviolet technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the luminous efficiency and service life of ultraviolet LEDs

Active Publication Date: 2021-01-15
江西力特康光学有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Obviously, too high operating voltage will seriously affect the luminous efficiency and service life of UV LEDs. How to effectively reduce the operating voltage of UV LEDs has become an urgent problem to be solved.

Method used

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  • Ultraviolet led epitaxial structure and preparation method thereof
  • Ultraviolet led epitaxial structure and preparation method thereof
  • Ultraviolet led epitaxial structure and preparation method thereof

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preparation example Construction

[0077] image 3 Shown is a flow chart of the method for preparing the ultraviolet LED epitaxial structure provided by the embodiment of the present application. See figure 1 and image 3 , the present application also provides a method for preparing an ultraviolet LED epitaxial structure, the method comprising:

[0078] Step 301, providing a substrate 10;

[0079]Step 302, put the substrate 10 into the reaction chamber of the MOCVD machine, and after heating up to the first preset temperature, feed the group III Al source and NH into the reaction chamber 3 , forming a first AlN layer 20 on the surface of the substrate; optionally, the first preset temperature range is 600°C-1000°C.

[0080] Step 303, when the temperature in the reaction chamber rises to a second preset temperature, a second AlN layer 30 is formed on the surface of the first AlN layer 20 away from the substrate 10; the second preset temperature is higher than the first preset temperature; Optionally, the s...

Embodiment 1

[0088] Step 1, put the sapphire substrate into the reaction chamber of the MOCVD machine, and pass TMAl, NH 3 and H 2 , forming a low-temperature AlN layer with a thickness of 25 nm on the surface of the sapphire substrate.

[0089] Step 2, at 1270°C, feed TMAl, NH under the reaction chamber pressure of 50Torr 3 and H 2 , forming a high-temperature AlN layer with a thickness of about 3 μm.

[0090] Step 3, lower the temperature to 1070°C, and feed TMAl, TMGa, SiH under the pressure of 50Torr in the reaction chamber 4 , NH 3 and H 2 , forming N-type Al with a thickness of about 2 μm a Ga 1-a N ohmic contact layer; where, SiH 4 It is N-type dopant, Si concentration is 1.5E+19cm -3 .

[0091] Step 4, lower the temperature to 1000°C, and feed TMAl, TMGa, SiH under the pressure of 50Torr in the reaction chamber 4 , NH 3 and H 2 , forming the first Si-doped Al x Ga 1-x N quantum well layer, the thickness is about 2nm, the Al composition is about 44%, and the doping co...

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Abstract

The invention provides an ultraviolet LED epitaxial structure and a preparation method thereof, and relates to the technical field of light emitting diodes. In the ultraviolet LED epitaxial structure,an AlxGa<1-x>N / AlyGa<1-y>N multi-quantum well active layer comprises a first light-emitting structure and a second light-emitting structure, each first AlyGa<1-y>N quantum barrier layer of the firstlight-emitting structure is doped with Si, at least one first AlxGa<1-x>N quantum well layer is doped with Si, and an N-type semiconductor can be formed after the element Si is doped into an AlGaN material, so that the conductivity can be improved, the resistance of the multi-quantum well active region can be reduced, and the working voltage of the ultraviolet LED can be further reduced. Besides,the Si doping concentration in the first AlxGa<1-x>N quantum well layer is set to be lower than the Si doping concentration in the first AlyGa<1-y>N quantum barrier layer, so that the limiting effectof the active region on electrons can also be enhanced, and the light intensity of the ultraviolet LED is facilitated to be improved.

Description

technical field [0001] The present invention relates to the technical field of light-emitting diodes, and more particularly, to an epitaxial structure of an ultraviolet LED (Light-Emitting Diode, light-emitting diode) and a preparation method thereof. Background technique [0002] Compared with traditional ultraviolet light sources, ultraviolet LEDs have many advantages such as high luminous efficiency, long life, small size, and no toxic substances. Therefore, research on ultraviolet LEDs in various fields is becoming more and more popular. [0003] Generally, for near-ultraviolet LEDs with a working wavelength of 365-400nm, the quantum wells are InGaN materials, and the external quantum efficiency is high, which can reach 50-60%. For AlGaN-based ultraviolet LEDs with wavelengths shorter than 365nm, due to the The mobility of Al atoms is low, which leads to poor growth quality of AlGaN materials, and then greatly reduces the external quantum efficiency. Moreover, the AlGaN...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/325
Inventor 刘锐森蓝文新刘召忠林辉杨小利
Owner 江西力特康光学有限公司
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