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Positive interdigital full-back contact perovskite solar cell and preparation method thereof

A full-back contact and solar cell technology, applied in the field of solar cells, can solve problems such as limiting solar cell collection efficiency, hindering solar cell conversion efficiency, metal electrode shading, etc., to reduce costs, improve light utilization, and reduce reflections Effect

Pending Publication Date: 2020-06-16
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, perovskite solar cells basically adopt a sandwich structure in which the electron transport layer and the hole transport layer are located on both sides of the perovskite absorption layer. Whether light is incident from the electron transport layer or from the hole transport layer, the carrier transport layer Or the transparent conductive substrate has inevitable parasitic absorption, and the metal electrode on the light-facing surface also has the problem of shading, which limits the light collection efficiency of the solar cell and hinders the improvement of the conversion efficiency of the solar cell.

Method used

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  • Positive interdigital full-back contact perovskite solar cell and preparation method thereof
  • Positive interdigital full-back contact perovskite solar cell and preparation method thereof
  • Positive interdigital full-back contact perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1) Use glass as the substrate, and use ultrasonic and electronic cleaning fluid to clean it, such as image 3 a;

[0026] 2) Prepare a comb-shaped copper film with a thickness of 200nm by magnetron sputtering and a mask plate, such as image 3 b;

[0027] 3) Using evaporation deposition method and mask plate in image 3 Prepare a hole transport layer on the left comb electrode in b, such as Spiro-TPD, with a thickness of 100nm, such as image 3 c;

[0028] 4) Prepare dense SiO with a thickness of 100 nm on the hole transport layer by thermal evaporation and mask 2 film, such as image 3 d;

[0029] 5) Prepare a comb-shaped copper film with a thickness of 200nm by magnetron sputtering and a mask plate, such as image 3 e;

[0030] 6) Using thermal evaporation method and mask plate in image 3 Prepare an electron transport layer on the comb electrode in e, such as PCBM, with a thickness of 50nm, such as image 3 f;

[0031] 7) Prepare a polycrystalline perovski...

Embodiment 2

[0036] 1) Use glass as the substrate, and use ultrasonic and electronic cleaning fluid to clean it, such as image 3 a;

[0037] 2) Prepare a comb-shaped copper film with a thickness of 100nm by thermal evaporation method and mask plate, such as image 3 b;

[0038] 3) Using magnetron sputtering method and mask plate in image 3 Prepare a hole transport layer on the comb electrode in b, such as NiO x , thickness 100nm, such as image 3 c;

[0039] 4) Prepare dense SiO with a thickness of 100 nm on the hole transport layer by magnetron sputtering and mask 2 film, such as image 3 d;

[0040] 5) Prepare a comb-shaped titanium film with a thickness of 100nm by thermal evaporation method and mask plate, such as image 3 e;

[0041] 6) Using magnetron sputtering method and mask plate in image 3 Preparation of electron transport layer on the comb electrode in e, such as TiO 2 , thickness 50nm, such as image 3 f;

[0042] 7) Prepare a polycrystalline perovskite absorbi...

Embodiment 3

[0047] 1) Use glass as the substrate, and use ultrasonic and electronic cleaning fluid to clean it, such as image 3 a;

[0048] 2) adopt magnetron sputtering method and mask plate to prepare the comb gold film of thickness 50nm, as image 3 b;

[0049] 3) Prepare dense Al with a thickness of 20 nm on the hole transport layer by chemical vapor deposition and mask 2 o 3 film, such as image 3 d;

[0050] 4) Prepare a comb-shaped titanium film with a thickness of 100nm by thermal evaporation and a mask, such as image 3 e;

[0051] 5) Prepare a polycrystalline perovskite absorbing layer with a thickness of 700nm by one-step solution spin coating method, such as image 3 g;

[0052] 6) Prepare a KI passivation layer with a thickness of 15nm by thermal evaporation, such as image 3 h;

[0053] 7) Preparation of SiO with low refractive index by electron beam evaporation 2 / MgF 2 Dense anti-reflection protective layer with a thickness of 100nm, such as image 3 i.

[0...

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Abstract

The invention discloses a positive interdigital full-back contact perovskite solar cell structure. The structure sequentially comprises the following components from bottom to top: 1) a substrate; 2)a positive electrode; 3) a hole transport layer; 4) an insulating isolation layer; 5) a negative electrode; 6) an electron transport layer; 7) a perovskite absorption layer; 8) a passivation layer; and 9) anti-reflection protective layer. The solar cell is characterized in that the positive electrode and the negative electrode are orthogonally arranged but not connected on the backlight surface ofthe cell, and are separated from each other by means of insulating material filling and the like; the perovskite absorption layer can be made of a polycrystalline or monocrystalline perovskite material; the passivation layer adopts PMMA, PEAI and other compounds to reduce surface interface defects and carrier recombination of the perovskite absorption layer; the anti-reflection protective layer is a low-refractive-index compact film or a suede-structure anti-reflection film. The solar cell structure disclosed by the invention can avoid the shading loss of the light-facing surface electrode and the parasitic absorption of a charge transfer layer or the substrate, improve the conversion efficiency of the perovskite solar cell and improve the appearance of the solar cell.

Description

technical field [0001] The invention relates to a solar cell, in particular to a positive interdigitated full-back contact perovskite solar cell. [0002] technical background [0003] The depletion of fossil energy and the environmental pollution caused by its use have promoted the rapid development of renewable energy. Solar energy is an inexhaustible clean and renewable energy, and photovoltaic solar cells are one of the main ways to utilize solar energy. Solar cells are valued for their safety and reliability, no noise, no risk of depletion, and no geographical restrictions on resource distribution. [0004] In 2009, the first solar cell based on organic / inorganic metal halide perovskite materials had an efficiency of only 3.8%, but in just ten years its efficiency has exceeded 25%, and it can be prepared by a low-cost solution method. Both high efficiency and low cost have shown great potential. At present, perovskite solar cells basically adopt a sandwich structure i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/15H10K30/151H10K30/10H10K30/152H10K30/80H10K30/88Y02E10/549Y02P70/50
Inventor 李跃龙侯国付赵颖张晓丹
Owner NANKAI UNIV
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