AlGaAs/GaAs high-electron-mobility transistor with multi-channel laminated insulation side gate fin type structure and preparation method thereof

Abstract

The invention discloses an AlGaAs / GaAs high-electron-mobility transistor with a multi-channel laminated insulation side gate fin type structure. The AlGaAs / GaAs high-electron-mobility transistor sequentially comprises a GaAs or germanium substrate, a plurality of layers of AlGaAs / GaAs heterojunctions, a GaAs cap layer, a SiN passivation layer, a source electrode, a drain electrode and a gate electrode from bottom to top, wherein the gate fin adopts a laminated structure with different fin widths at the upper and lower layers, the fin width of the upper layer being smaller than that of the lower layer; and an insulating dielectric layer is arranged between the gate electrode and the side walls of the plurality of layers of AlGaAs / GaAs heterojunctions. The high-electron-mobility transistor provided by the invention adopts a three-dimensional laminated fin type structure, so that gate regions with different fin widths perform composite control on a device channel, which is equivalent to parallel connection of devices with different threshold values; when gate voltage is applied, transconductance performance of the device is widened and linear working characteristics are improved; theinsulating dielectric layer is introduced into the side wall of the gate fin, so that the leakage current introduced by the side gate etching surface of the fin type structure is effectively reduced,the static power consumption of the device is reduced, and the breakdown voltage of the device is improved.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to an AlGaAs / GaAs high electron mobility transistor with a multi-channel stacked insulating side gate fin structure and a preparation method thereof. Background technique

[0002] High electron mobility transistors (HEMTs) are recognized as one of the most promising high-speed electronic devices. Because of its characteristics of ultra-high speed, low power consumption, and low noise (especially at low temperature), it can meet the needs of ultra-high-speed computers, signal processing, satellite communications, etc., and thus has been widely valued. As a new generation of microwave and millimeter wave devices, high electron mobility transistors (HEMTs) show unparalleled advantages in terms of frequency, gain and efficiency. GaAs / Al x Ga 1-x As material is the material system with the earliest development, the widest application and the most research. Since t...

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