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A kind of additive for single crystal texture making and its application

A single crystal texturing and additive technology, applied in the direction of single crystal growth, single crystal growth, sustainable manufacturing/processing, etc., can solve the problems of increasing working hours and costs, achieve performance improvement, uniform deposition, and save working hours and costs Effect

Active Publication Date: 2021-01-05
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the processing steps of these three patents are all for the silicon wafers that have been textured. Therefore, in the preparation process of the HIT battery, it is necessary to add a sharp pyramid structure on the surface of the silicon wafer between the texturing step and the amorphous silicon film plating step. A processing step of etching to a rounded smooth texture, which increases man-hours and costs

Method used

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  • A kind of additive for single crystal texture making and its application

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Embodiment 1

[0027] The invention provides a single crystal texturing method, the specific steps of which include:

[0028] 1) Preparation of additives: Add 0.5% to 10% of nucleating agent, 0.02% to 0.5% of suede conditioner, and 0.1% to 0.5% of defoaming agent into the remaining water and mix well Formulated as additives;

[0029] The nucleating agent is selected from one or more of polyglutamic acid, polyaspartic acid, polylysine, polydiaminobutyric acid and polydiaminopropionic acid;

[0030] The suede conditioner is selected from one or more of disodium undecylenamide MEA sulfosuccinate, disodium cocoamphodiacetate, and disodium lauroamphodiacetate;

[0031] The defoaming agent is selected from one or more of diethylene glycol, triethylene glycol, tetraethylene glycol;

[0032] The water is preferably deionized water;

[0033] 2) Preparation of velvet-making liquid: add the additive prepared in step 1) to the alkali solution, mix evenly to prepare the velvet-making liquid; the mass ...

Embodiment 2

[0037] The present invention also provides a method for preparing a HIT battery, comprising a texturing step and an amorphous silicon film plating step, the amorphous silicon film coating step is performed after the texturing step; the texturing step follows the single crystal texturing method in Example 1 implementation; and between the texturing step and the amorphous silicon film plating step, the processing step of etching the sharp pyramid structure on the surface of the silicon chip into a round and smooth textured surface is not added.

[0038] Since the sharp pyramidal structure can be directly adjusted into a round and smooth textured surface in the texturing step, it is not necessary to add additional Si The processing step of etching the sharp pyramid structure on the surface of the chip into a round and smooth suede surface saves man-hours and costs.

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Abstract

The invention discloses an additive for single crystal texturing. The mass percentage content of each component is: 0.5%-10% of a nucleating agent, 0.02%-0.5% of a suede regulator, and 0.1%-0.5% of a defoaming agent. %, and the balance is water. Adding the additive of the present invention to the alkaline texturing solution of monocrystalline silicon wafers can directly make texturing sheets with round and smooth textured surfaces, the formed pyramid structure is no longer sharp, and the top of the pyramid structure has a certain Smooth surface.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to an additive for making single crystal texture and its application. Background technique [0002] Since it was invented by Japan's Sanyo Corporation in 1990, HIT batteries have always attracted people's attention. Due to the combination of the advantages of crystalline silicon solar cells and thin-film cells, HIT cells have long maintained the world record for the efficiency of crystalline silicon solar cells. [0003] HIT cells need to be coated with amorphous silicon thin films on the surface of monocrystalline silicon that has been made of cashmere. The uniformity and quality of amorphous silicon thin films are key factors affecting the efficiency of HIT cells. However, since the thickness of the coated amorphous silicon film is very thin, the deposition of the amorphous silicon film is seriously affected by the topography of the silicon wafer. However, silicon wafer texturing wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/0747H01L31/20C30B33/10C30B29/06
CPCC30B29/06C30B33/10H01L31/02363H01L31/0747H01L31/202Y02E10/50Y02P70/50
Inventor 周树伟张丽娟陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD