Global shutter image sensor unit and preparation method thereof

A technology of image sensor and global shutter, applied in the field of image sensor, can solve the problems affecting the signal of storage nodes, etc., and achieve the effect of mature technology, simple process and obvious technical effect

Pending Publication Date: 2020-07-28
上海微阱电子科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

However, since there is a gap in the dielectric isolation layer 106 between the metal interconnection layer 107 and the floating diffusion region 104, and the dielectric layer has a relatively good li

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  • Global shutter image sensor unit and preparation method thereof
  • Global shutter image sensor unit and preparation method thereof
  • Global shutter image sensor unit and preparation method thereof

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Embodiment Construction

[0029] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0030] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0031] In the following specific embodiments of the present invention, please refer to figure 2 , figure 2 It is a structural schematic diagram of a global shutter image sensor unit capable of realizing anti-leakage of storage nodes in a floating diffusion area according to a preferred embodiment of the present invention. Such as figure 2 As sh...

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Abstract

The invention discloses a global shutter image sensor unit. The global shutter image sensor unit comprises a substrate, and a shallow slot isolation region, a transmission transistor gate, a photodiode and a floating diffusion region which are arranged on the substrate, and a conductive light blocking layer arranged above the substrate, wherein the conductive light blocking layer is adjacently located above the floating diffusion region and completely covers the floating diffusion region, a lower surface of the conductive light blocking layer is connected with an upper surface of the floatingdiffusion region, and an upper surface of the conductive light blocking layer is connected with a metal interconnection layer arranged above the substrate. The global shutter image sensor unit is advantaged in that through a lightproof silicide conductive light blocking layer arranged above a storage node capacitor of the floating diffusion region, the floating diffusion region is effectively prevented from being influenced by illumination, and the parasitic light response of the global shutter image sensor unit is reduced.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a global shutter image sensor unit and a preparation method thereof. Background technique [0002] An image sensor refers to a device that converts optical signals into electrical signals. Image sensor unit categories mainly include Charge Coupled Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS) devices. Compared with traditional CCD sensors, CMOS image sensors have the characteristics of low power consumption, low cost, and compatibility with CMOS technology, so they are more and more widely used. [0003] The CMOS image sensor includes a pixel array composed of many pixel units, and the pixel unit is the core device for the image sensor to realize light sensing. In the CMOS image sensor, the exposure time is usually controlled by an electronic shutter. According to different working principles, the electronic shutter is divided into two types: drum type a...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14643H01L27/14683H01L27/14689
Inventor 范春晖
Owner 上海微阱电子科技有限公司
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