Spectrum chip based on spectrum up-conversion material and control method thereof

Abstract

The invention discloses a spectrum chip based on a spectrum up-conversion material and a control method thereof. The spectrum chip comprises a silicon-based detector, a spectrum up-conversion materialfilm and an optical focusing micro-lens array, and the centers are located on the same axis. The silicon-based detector comprises a pixel photosensitive region and a photoelectric conversion substrate, the optical focusing micro-lens array converges infrared signals and then irradiates to the spectrum up-conversion material film, the infrared light signals are converted into visible light signalsthrough the spectrum up-conversion material film to be transmitted to the pixel photosensitive region of the silicon-based detector, and the visible light signals reach the photoelectric conversion substrate through the pixel photosensitive area and output electric signals. The spectrum chip has the advantages that the whole production process is simple and mature, real-time, rapid and on-line detection can be carried out on the infrared band, and the detection time is at the microsecond magnitude or above.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a spectrum chip based on a spectrum up-conversion material and a control method thereof. Background technique [0002] Infrared detection technology has important applications in many popular fields, including aerospace remote sensing monitoring, military reconnaissance, automotive night vision system, semiconductor wafer inspection, agricultural product inspection, biomedical inspection, security monitoring system, various semiconductor lasers and infrared luminescence Diode emission light tracking, proofreading, identification and optical fiber communication signal detection and so on. At present, infrared detection mainly uses InGaAs (invention patent: an InGaAs short-wave infrared detector, publication number: CN 105914250A) or germanium (invention patent: an integrated infrared bandpass filter and spectrometer, publication number: CN 207457534 U) detector is appl...

AI Technical Summary

Problems solved by technology

However, when the photosensitive element of the detector makes the tapered through hole, because the existing technology level cannot perfectly produce the required tapered through hole size or radian, errors will occur in the detection results, and such a complicated process flow must be Along with the high cost, it is difficult to realize its wide application; an integrated infrared band-pass filter and spectrometer fabricates a metal layer micro- or nano-hole array through photolithography to achieve the effect of an infrared band-pass filter, and in each A separate detector is set under the infrared band-pass filter formed by an integrated hole array for detection, so that the infrared light of different wavelengths formed after passing through the integrated infrared band-pass filter will be received by the lower detector and converted into electrical signals to achieve detection Purpose

However, it should be noted that this patent needs to use photolithography technology to make hole arrays and to correspond to the detector pixels one by one, which undoubtedly increases the difficulty of the manufacturing process, and there will be errors in the hole arrays made by the existing technology. , affecting the detection effect

Although the above-mentioned detectors can achieve the purpose of detecting the infrared spectrum, their shortcomings such as low signal-to-noise ratio, long exposure time, difficulty in miniaturization of the detection system, complicated preparation process and high cost have hindered the further development of infrared detection devices in my country. application bottleneck

[0003] Compared with InGaAs or Germanium-based detectors, silicon-based detectors have mature technology and low cost, and their signal-to-noise ratio is much higher than that of InGaAs and Germanium-based detectors under the same conditions as exposure time and operating temperature. detector, but the detection wavelength range of the silicon-based detector is up to 1100nm, which limits its application in the infrared band

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