Multi-color infrared detector and its manufacturing method
A detector and color red technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as blank, monochromatic detectors are not optimal, and crosstalk is large, so as to suppress crosstalk, Guaranteed performance and good versatility
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Embodiment 1
[0037] like Figure 7 As shown, in the multicolor infrared detector of this embodiment, the effective bandwidths of the p-type hole barrier layer 4, the n-type blue channel absorbing layer 3 and the p-type green channel absorbing layer 5 are sequentially and the effective bandwidths of the n-type electronic barrier layer 6, the p-type green channel absorber layer 5 and the n-type red channel absorber layer 7 decrease sequentially, so that each band forms a single heterojunction The structure, through the insertion of the potential barrier, suppresses the dark current very well, and does not affect the smooth collection of photocurrent, ensuring the performance of each band detector, and can be applied to the combination of different bands, such as short-wave, medium-wave and long-wave , has great versatility.
[0038] Further, the first n-type contact layer 2, the n-type blue channel absorption layer 3, the n-type electron barrier layer 6, the n-type red channel absorption la...
Embodiment 2
[0048] This embodiment specifically illustrates the manufacturing method of the multicolor infrared detector of Embodiment 1.
[0049] like Figure 3 to Figure 6 As shown, the production method includes:
[0050] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type InAs, the thickness is 500 μm, and the doping concentration is 5×10 16 cm -3 (doped with Si).
[0051] Step S2, using the metal organic chemical vapor deposition (MOCVD) process as the growth process, the growth source is TMGa, TMIn, TMSb, AsH 3 and PH 3 , the n-type dopant source is SiH 4 , the p-type dopant source is DEZn, the growth temperature is about 600°C, and the reaction chamber pressure is 200Torr. After high-temperature treatment to remove impurities on the surface of the N-type substrate 1, a first n-type contact layer 2, an n-type blue channel absorption layer 3, and a p-type hole barrier are sequentially formed on the N-type substrate 1. Layer 4, p-type gree...
Embodiment 3
[0064] This embodiment specifically illustrates another manufacturing method of the multicolor infrared detector of Embodiment 1.
[0065] like Figure 3 to Figure 6 As shown, the production method includes:
[0066] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type GaSb, the thickness is 500 μm, and the doping concentration is 2×10 18 cm -3 (doped with Si).
[0067] Step S2, using molecular beam epitaxy (MBE) as the growth process, the growth source is solid single source In, Al, As and Sb, the n-type dopant source is Si, the p-type dopant source is Be, and the growth temperature is about 400°C . After high-temperature treatment to remove impurities on the surface of the N-type substrate 1, a first n-type contact layer 2, an n-type blue channel absorption layer 3, and a p-type hole barrier are sequentially formed on the N-type substrate 1. Layer 4, p-type green channel absorption layer 5, n-type electron barrier layer 6, n-type re...
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Abstract
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