Nickel oxide composite film and preparation method thereof and led

A composite film, nickel oxide technology, applied in semiconductor/solid-state device manufacturing, organic semiconductor devices, coatings, etc., can solve problems such as unsatisfactory hole transport effect and low work function, and avoid complex and time-consuming preparation processes. The effect of improving work function and good application prospect

Active Publication Date: 2022-07-19
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL +1
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  • Abstract
  • Description
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Problems solved by technology

[0004] One object of the present invention is to provide a nickel oxide composite thin film and its preparation method, aiming to solve the technical problem that the existing nickel oxide thin film has a low work function, which leads to unsatisfactory hole transport effect

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  • Nickel oxide composite film and preparation method thereof and led
  • Nickel oxide composite film and preparation method thereof and led
  • Nickel oxide composite film and preparation method thereof and led

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preparation example Construction

[0030] On the one hand, the embodiment of the present invention provides a preparation method of a nickel oxide composite film, and the preparation method includes the following steps:

[0031] S01: Provide initial nickel oxide film;

[0032] S02: depositing alkyl sulfate on the surface of the initial nickel oxide film, and then performing oxygen plasma treatment to obtain the nickel oxide composite film.

[0033] In the method for preparing the nickel oxide composite film provided by the embodiment of the present invention, an alkyl sulfate is first deposited on the surface of the initial nickel oxide film, and then an oxygen plasma treatment is performed to obtain a modified nickel oxide composite film. The preparation method has simple process and good repeatability, avoids the complex and time-consuming problem of traditional metal cation doping preparation process, and the preparation method can significantly improve the work function of the nickel oxide composite film, a...

Embodiment 1

[0055] A perovskite light-emitting diode whose structure is as follows figure 1 As shown, it includes an anode 1 , a hole transport layer 2 , a perovskite light-emitting layer 3 , an electron transport layer 4 and a cathode 5 in order from bottom to top. The material of anode 1 is ITO, the material of hole transport layer 2 is nickel oxide composite film, the material of electron transport layer 4 is TPBI, and the material of cathode 5 is LiF / Al.

[0056] The preparation steps of the above hole transport layer 2 include:

[0057] Dissolve 1 mmol of nickel acetate tetrahydrate and 60 μL of ethanolamine in 10 ml of ethanol solution, and stir at 60 °C for 4 hours to obtain a nickel oxide precursor solution; filter the nickel oxide precursor with a polytetrafluoroethylene filter, in a 1cm × 1cm The anode ITO substrate was spin-coated and loaded with 50 μL of the above-mentioned nickel oxide precursor solution (prepared by solution spin-coating under the conditions of 4000 rpm and...

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Abstract

The invention belongs to the technical field of hole transport materials, and particularly relates to a nickel oxide composite film, a preparation method thereof, and an LED. The preparation method of the nickel oxide composite film includes the following steps: providing an initial nickel oxide film; depositing alkyl sulfate on the surface of the initial nickel oxide film, and then performing oxygen plasma treatment to obtain the nickel oxide composite film. The preparation method can significantly improve the work function of the nickel oxide composite thin film, and can improve the stability of the work function, so it has good hole transport performance and has a good application prospect in light-emitting devices.

Description

technical field [0001] The invention belongs to the technical field of hole transport materials, and particularly relates to a nickel oxide composite film, a preparation method thereof, and an LED. Background technique [0002] Among many hole transport materials, nickel oxide (NiO x ) have been extensively studied in perovskite light-emitting diodes (PeLEDs) due to their excellent chemical stability, high electron mobility, and large-scale fabrication convenience. However, the carrier transport ability of the nickel oxide film is still not satisfactory at this stage. The key problem is that its potential barrier with the perovskite light-emitting layer is large and the hole concentration is low, thus limiting the holes based on nickel oxide. Electro-optical conversion efficiency of PeLEDs in the transport layer. [0003] At present, scientists generally use the method of doping metal nanoparticles to improve the charge transport properties of nickel oxide, in order to obt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54B05D3/14B05D1/00
CPCB05D1/00B05D3/148H10K50/15H10K2102/00
Inventor 赵维巍王浩然
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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