Composition of electrode for nuclear radiation detector and preparation method of crystal

Abstract

The invention relates to composition of an electrode for a nuclear radiation detector and a preparation method of a crystal. The method sequentially comprises the following steps of adopting a mobileheater to grow the crystal, setting the temperature field distribution of a growth furnace, completing proportioning of stoichiometric ratios of all components, mixing to form a polycrystalline ingot,establishing a redissolution control step sequence, cutting a single crystal wafer, distinguishing cathode and anode surfaces of a prepared electrode, carrying out crystal surface treatment, preparing the electrode, and carrying out passivation treatment. According to the composition of the electrode for the nuclear radiation detector and the preparation method of the crystal, through the crystalgrowth control and electrode structure arrangement formed in the steps, the preparation of the crystal with high carrier mobility, smooth surface and uniform components and the composite electrode for the detector with high-quality ohmic contact characteristics is completed, and a guarantee is provided for the excellent energy spectrum response of the detector.

Description

technical field [0001] The invention belongs to the field of high-energy ray detectors, and in particular relates to a composition of an electrode for a nuclear radiation detector and a method for preparing a crystal. Background technique [0002] By establishing the detection of radiation, it is a composition for the safety monitoring of nuclear radiation sites. The ideal detector material needs to have a high average atomic number to form a high efficiency of high-energy rays; a wide band gap to ensure the stability of the detector at room temperature; high purity and high integrity of the crystal; High signal carrier migration lifetime product to avoid serious carrier trapping effect, so that the detector has high energy resolution. High-energy ray detectors have experienced three generations of detectors: gas detectors, scintillator detectors and semiconductor detectors. Gas detectors are gradually replaced by scintillator detectors and semiconductor detectors due to th...

AI Technical Summary

Problems solved by technology

[0003] As the third-generation detector, the semiconductor detector has the advantages of high resolution and simple device. However, due to the low atomic number of Si in the more mature semiconductor detector, the silicon detector has a low detection efficiency for high-energy rays with energy greater than 20keV. Very low; and high-purity germanium detectors must work below the temperature of liquid nitrogen due to the small band gap of Ge, and the scope of use is very limited.

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