Mixed polycation perovskite material film with optical gain characteristic as well as preparation method and application thereof

A multi-cation, optical gain technology, applied in the field of mixed multi-cation perovskite material thin film and its preparation, can solve the problems of high current density, large non-radiative recombination, stability, poor light resistance, etc., and achieve high crystal quality, shape and shape. The appearance is smooth and flat, no pinholes, and the effect of improving stability
CN111909686AActive Publication Date: 2020-11-10PEKING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
PEKING UNIV
Publication Date
2020-11-10

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Abstract

The invention discloses a mixed polycation perovskite material thin film with an optical gain characteristic as well as a preparation method and application thereof. The chemical structural general formula of the mixed polycation perovskite material thin film is [(A0.87 BxCy) PbX3] b [A '2PbX4] c, in A < 0.87 > B < x > C < y >, x + y = 0.13, 0.87 is the mass ratio of the total mass of A to the total mass of A + B + C, x is the mass ratio of the total mass of B to the total mass of A + B + C, and y is the mass ratio of the total mass of C to the total mass of A + B + C, wherein the thickness ofthe mixed polycation perovskite material thin film ranges from 20 nm to 200 nm; the gain coefficient ranges from 800 cm < 1 > to 3000 cm < 1 >; the light emitting wavelength ranges from 510-530nm; and the roughness of the nano titanium dioxide is 0.5-5nm. According to the invention, the optical and thermal stability of the perovskite material and the gain characteristic of the thin film are improved.
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Description

technical field

[0001] The invention belongs to the field of perovskite materials, in particular, the invention relates to a mixed multi-cation perovskite material thin film with optical gain characteristics and its preparation method and application. Background technique

[0002] As an emerging semiconductor optoelectronic material, metal halide perovskite has excellent optoelectronic properties such as large absorption coefficient, low defect state density, high fluorescence quantum yield, tunable luminescence band gap, etc., so it is widely used in the field of optoelectronic devices with broadly application foreground. The general chemical formula of perovskite materials can be expressed as ABX 3 , B ions and X ions can form a regular octahedral structure, where A is Cs + 、CH 3 NH 3 + (MA), HC (NH 2 ) + (FA) etc., B ion is Pb 2+ , Sn 2+ and other cations, X ion is I - 、Br - , Cl - and other anions. At the same time, the ionic radii of A, B, and X determine t...

Claims

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