Preparation method of plasmon polariton enhanced quantum dot light emitting diode based on Au @ SiO2

A technology of quantum dot light emission and plasmon polaritons, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc. Turn-on voltage, novel preparation method, and the effect of improving luminous intensity

Pending Publication Date: 2020-11-17
FUZHOU UNIVERSITY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the purpose of the present invention is to provide an Au@SiO based 2 The preparation method of plasmon-enhanced quantum d

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of plasmon polariton enhanced quantum dot light emitting diode based on Au @ SiO2
  • Preparation method of plasmon polariton enhanced quantum dot light emitting diode based on Au @ SiO2
  • Preparation method of plasmon polariton enhanced quantum dot light emitting diode based on Au @ SiO2

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0046] Example one

[0047] (1) Weigh out 0.0207g of cadmium oxide powder, 0.112g of 1-tetradecyl phosphoric acid and 2.0g of tri-n-butyl phosphine oxide, put them into a 50mL three-necked flask, evacuate the argon gas for 30 minutes, and then Heat to 240℃ under protection to completely dissolve the solute to form a transparent solution, which is the cadmium precursor solution;

[0048] (2) Weigh 0.0316g of selenium powder and 1.0g of tributylphosphine, put them into another 50mL three-necked flask, and then heat to 100°C under the protection of argon to completely dissolve the solute to form a transparent solution, and obtain selenium Precursor solution

[0049] (3) Quickly inject the selenium precursor solution into the cadmium precursor solution at 250°C, then lower the temperature of the mixed solution to 220°C and keep it for 1 min, then remove the heat source, then cool down to 80°C, and add 10 mg of organic matter Obtain a CdSe quantum dot solution;

[0050] (4) Measure 100ml...

Example Embodiment

[0058] Example two

[0059] (1) Weigh 0.0614g of cadmium oxide powder, 0.336g of 1-tetradecyl phosphoric acid and 1.5g of tri-n-butyl phosphine oxide, put them into a 50mL three-necked flask, first evacuate with argon for 80 minutes, and then in argon Heat to 300℃ under protection to completely dissolve the solute to form a transparent solution, which is the cadmium precursor solution;

[0060] (2) Weigh 0.0812g of selenium powder and 3.0g of tributylphosphine, put them into another 50mL three-necked flask, and then heat to 170℃ under the protection of argon to completely dissolve the solute to form a transparent solution to obtain selenium Precursor solution

[0061] (3) At 300°C, quickly inject the selenium precursor solution into the cadmium precursor solution, then lower the temperature of the mixed solution to 250°C and keep it for 15 minutes, then remove the heat source, then cool down to 100°C, and add 10 mg of organic matter Obtain a CdSe quantum dot solution;

[0062] (4) M...

Example Embodiment

[0070] Example three

[0071] (1) Weigh 0.0608g of cadmium oxide powder, 0.326g of 1-tetradecyl phosphoric acid and 1.48g of tri-n-butyl phosphine oxide, put them into a 50mL three-necked flask, evacuate the argon gas for 80 minutes, and then Heat to 300℃ under protection to completely dissolve the solute to form a transparent solution, which is the cadmium precursor solution;

[0072] (2) Weigh 0.0821g of selenium powder and 3.0g of tributylphosphine, put them into another 50mL three-necked flask, and then heat to 170℃ under the protection of argon to completely dissolve the solute to form a transparent solution to obtain selenium Precursor solution

[0073] (3) At 300°C, quickly inject the selenium precursor solution into the cadmium precursor solution, then lower the temperature of the mixed solution to 250°C and keep it for 15 minutes, then remove the heat source, then cool down to 100°C, and add 9 mg of organic matter Obtain a CdSe quantum dot solution;

[0074] (4) Measure 200...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Volumeaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method of a quantum dot light-emitting diode based on Au@SiO2 plasmon enhancement, which comprises the following steps: preparing a TFB/Au @ SiO2 shell-core structure nanoparticle solution, preparing a hole injection layer, a hole transport layer and a quantum dot light-emitting layer on ITO (indium tin oxide) glass, and then preparing an electron transport layer and an electrode. And the hole transport layer is prepared by spin-coating a TFB/Au-coated SiO2 shell-core structure nanoparticle solution. The preparation method is novel, the manufacturing costis low, the preparation process is simple, the mobility of the hole transport layer is improved by doping the gold nanoparticles in the hole transport layer, the luminous intensity of the device is improved by using the plasmon polariton enhancement principle, electrons and holes are effectively compounded in the quantum dot layer. The quantum dot light-emitting diode has the advantages that auger recombination is inhibited, starting voltage is reduced, and luminous intensity and EQE under the same voltage are improved, so that the performance of the quantum dot light-emitting diode is greatly improved. The defects that the starting voltage of the laminated quantum dot light-emitting diode is too high and the current density is relatively low are effectively overcome.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and devices, in particular to an Au@SiO-based 2 A method for preparing a plasmon-enhanced quantum dot light-emitting diode. Background technique [0002] With the development of science and technology and the progress of society, information exchange and transmission have become an indispensable part of daily life. The development of display devices is the basis of information exchange and transmission, so it has become the focus of many scientists in the field of optoelectronics. Quantum dot light-emitting diode devices, because of their excellent electroluminescent performance and wide color gamut, have become a new star in display devices. As a display device that is most likely to be practical, it has become the focus of many scientists. The object of study plays a vital role in areas such as information exchange and delivery. With the improvement of people's requirements for image q...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/50H01L51/54H01L51/56H01L51/00
CPCH10K71/00H10K85/00H10K50/115H10K50/155
Inventor 杨尊先郭太良刘佳慧徐雷林诗敏陈恩果周雄图陈耿旭吴朝兴王嘉祥
Owner FUZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap