Laser-induced reduction and sintering method of copper oxide ink to prepare flexible copper circuit
A laser-induced, copper oxide technology
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Embodiment 1
[0036] Such as Figure 1 to Figure 4 Shown as an embodiment of the method for preparing a flexible copper circuit with the laser-induced reduction sintering copper oxide ink of the present invention, comprising the following steps:
[0037] S10. Prepare CuO nano-ink with precursor material CuO NP, dispersant PVP and reducing agent EG, where m CuO NP :m EG =1.33, m CuO NP :m PVP = 3.07;
[0038] S20. Prepare CuO nano-coating: spin-coat the CuO nano-ink prepared in step S10 onto the polymer substrate film, and dry to obtain CuO nano-coating; before spin-coating CuO nano-ink, use the plasma generated by the plasma generator The body carries out oxygen plasma surface treatment on the surface of the polymer substrate film to ensure the surface flatness of the PI substrate; in addition, when the surface of the polymer substrate film is subjected to oxygen plasma surface treatment, the oxygen plasma and the surface molecules Direct or indirect effect can make polar groups on t...
Embodiment 2
[0045] This embodiment is the same as Embodiment 1, except that the laser parameters used for femtosecond laser induction are: laser pulse energy of 0.17nJ, laser scanning speed of 15mm / s, and laser scanning times of 1. The metallographic image of the Cu circuit array obtained in the test step S30, such as image 3 As shown in (b), the test results show that the surface of the Cu circuit array obtained in this embodiment is uniform and dense. Using the same method as in Example 1 to analyze the elemental composition of the Cu circuit array, it is found that the Cu circuit array obtained in this embodiment has Cu:O=5.5:1, and the relative content of Cu / O is low, which may be due to: when 0.17nJ The laser energy is not enough to completely reduce Cu by CuO NPs, and part of Cu exists in the reduced Cu lines 2 O. Using the same method as in Example 1 to test the surface morphology of the Cu circuit array, it was found that the porosity of the Cu circuit was 12.43%. Combining me...
Embodiment 3
[0047] This embodiment is the same as Embodiment 1, except that the laser parameters used for femtosecond laser induction are: laser pulse energy is 0.24nJ, laser scanning speed is 11mm / s, and laser scanning times is 1 time. The metallographic image of the Cu circuit array obtained in the test step S30, such as Figure 5 As shown in (c), the test results show that the surface of the Cu circuit array obtained in this embodiment is uniform and dense. Using the same method as in Example 1 to analyze the elemental composition of the Cu circuit array, it is found that the Cu circuit array obtained in this example has Cu:O=15:1, and the relative content of Cu / O is relatively high, reflecting the connectivity of the Cu circuit surface at this time. very good. Such as Image 6 As shown in (c), the surface morphology of the Cu circuit array was tested by the same method as in Example 1, and it was found that the porosity of the Cu circuit was 15.52%. Combining metallographic analysi...
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Abstract
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