Preparation method of high-conductivity graphene/copper composite wire

A composite wire and high conductivity technology, applied in the field of graphene/copper composite wire preparation, can solve the problems of lattice constant mismatch, affecting interface bonding strength, misfit dislocation at the interface, etc., to prolong growth time, crystal Effect of large particle size and reduction of nucleation density

Inactive Publication Date: 2020-11-24
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the existing technology mainly prepares multilayer Gr by controlling the process parameters in the CVD process, so far, only about 10 layers of Gr can be prepared using this method.
[0003] After extensive research, the inventors found that the prior art did not pay attention to the difference in the lattice constant between Gr and the base material, which resulted in a certain degree of mismatch when

Method used

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  • Preparation method of high-conductivity graphene/copper composite wire
  • Preparation method of high-conductivity graphene/copper composite wire
  • Preparation method of high-conductivity graphene/copper composite wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Fabrication of single-cycle Gr / Cu wires

[0048] 1. The cold-drawn Cu wire with a diameter of 10 μm is electrochemically polished.

[0049] The electrochemical polishing solution is prepared by mixing and stirring 100mL deionized water, 50mL hydrochloric acid solution, 20mL alcohol, 5mL isopropanol and 2g urea. The Cu wire is immersed in a container filled with electrochemical polishing solution as an anode, and another piece of Cu sheet is used as a cathode. A 5V DC source provides constant voltage / current. The soaking time is 20s. Then the Cu wire was rinsed with deionized water and alcohol to remove the surface polishing solution, and then dried with nitrogen to obtain a Cu wire with a surface roughness of 2.8 nm.

[0050] 2. A cyclic process of the deposition preparation including doped growth:

[0051] 2-1, the doping growth:

[0052] 2-1-1, the pre-treatment:

[0053] Send the electrochemically polished Cu wire into a tube furnace with a vacuum degree of 100...

Embodiment 2

[0060] Preparation of two-cycle Gr / Cu wire

[0061] 1. Electrochemical polishing of cold drawn copper wire

[0062] Repeat the cold drawn Cu electrochemical polishing step of Example 1, but the diameter of the Cu wire used is 30 μm, and the polishing solution is mixed with 100 mL deionized water, 40 mL phosphoric acid solution, 60 mL alcohol, 10 mL isopropanol and 2 g urea to obtain a rough surface Cu wire with a thickness of 3.8nm.

[0063] 2. A cyclic process of the Gr deposition preparation includes doping growth-etching:

[0064] 2-1, the doping growth:

[0065] 2-1-1, the pre-treatment:

[0066] Repeat the pretreatment step in embodiment one;

[0067] 2-1-2, the Gr doped growth:

[0068] Repeat the Gr-doped growth step of the embodiment, but wherein the growth temperature, pressure, carbon source (C 2 h 5 OH) flow, reducing gas flow, doping source (BH 2 ) The flow rate and constant temperature time are 1000°C, 500Torr, 8sccm, 200sccm, 5sccm and 30min respectively;...

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Abstract

The invention provides a preparation method of a high-conductivity graphene/copper composite wire. The preparation method comprises the steps that a copper wire is subjected to electrochemical polishing to reach roughness RA less than 5 nm, and the roll-to-roll chemical vapor deposition and doping of graphene is conducted in a tubular furnace; the tubular furnace is correspondingly connected witha carbon source, a reducing gas source and a doping source; and the doping source comprises a material which causes the graphene to produce a p-type doping effect or a material which causes the graphene to produce an n-type doping effect. The deposition process of the graphene comprises 1-500 cycles sequentially conducted in the order of doping growth-etching, and each cycle comprises doping growth-etching. According to the technical scheme, the high-quality synthesis of the graphene is achieved, the thickness of a deposition and doping layer is improved as much as possible on the premise of maintaining high conductivity of the graphene, the graphene/copper composite wire with good matching thickness and conductivity of deposited and doped graphene and excellent interface bonding between the graphene and a substrate material is obtained, and the conductivity can reach 7.8*10<7> S/m.

Description

technical field [0001] The invention relates to a method for preparing a composite wire, in particular to a method for preparing a graphene / copper composite wire. Background technique [0002] Since the advent of graphene (Graphene, Gr), researchers have conducted a lot of research on it, and obtained a variety of methods to strengthen metal matrix composites with Gr. CVD (Chemical Vapor Deposition) in these methods can prepare Gr with good interface bonding and complete intrinsic structure, while other methods destroy the intrinsic structure of Gr to varying degrees, thus affecting the strengthening effect of Gr on composite materials. In the CVD method, the growth mechanism of Gr is self-limited growth. After the surface layer of the substrate is completely covered by the first layer of Gr, the carbon source and the substrate are separated by Gr, thereby limiting the further catalytic decomposition of the carbon source by the substrate and inhibiting the second layer of Gr...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/54C23C16/02C23C16/56C23C16/52C01B32/186H01B13/00
CPCC23C16/26C23C16/545C23C16/0254C23C16/56C23C16/52C01B32/186H01B13/00
Inventor 刘悦姚松松郭冲霄范同祥
Owner SHANGHAI JIAO TONG UNIV
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