Preparation method of high-conductivity graphene/copper composite wire

Abstract

The invention provides a preparation method of a high-conductivity graphene / copper composite wire. The preparation method comprises the steps that a copper wire is subjected to electrochemical polishing to reach roughness RA less than 5 nm, and the roll-to-roll chemical vapor deposition and doping of graphene is conducted in a tubular furnace; the tubular furnace is correspondingly connected witha carbon source, a reducing gas source and a doping source; and the doping source comprises a material which causes the graphene to produce a p-type doping effect or a material which causes the graphene to produce an n-type doping effect. The deposition process of the graphene comprises 1-500 cycles sequentially conducted in the order of doping growth-etching, and each cycle comprises doping growth-etching. According to the technical scheme, the high-quality synthesis of the graphene is achieved, the thickness of a deposition and doping layer is improved as much as possible on the premise of maintaining high conductivity of the graphene, the graphene / copper composite wire with good matching thickness and conductivity of deposited and doped graphene and excellent interface bonding between the graphene and a substrate material is obtained, and the conductivity can reach 7.8*10<7> S / m.

Description

technical field [0001] The invention relates to a method for preparing a composite wire, in particular to a method for preparing a graphene / copper composite wire. Background technique [0002] Since the advent of graphene (Graphene, Gr), researchers have conducted a lot of research on it, and obtained a variety of methods to strengthen metal matrix composites with Gr. CVD (Chemical Vapor Deposition) in these methods can prepare Gr with good interface bonding and complete intrinsic structure, while other methods destroy the intrinsic structure of Gr to varying degrees, thus affecting the strengthening effect of Gr on composite materials. In the CVD method, the growth mechanism of Gr is self-limited growth. After the surface layer of the substrate is completely covered by the first layer of Gr, the carbon source and the substrate are separated by Gr, thereby limiting the further catalytic decomposition of the carbon source by the substrate and inhibiting the second layer of Gr...

AI Technical Summary

Problems solved by technology

Although the existing technology mainly prepares multilayer Gr by controlling the process parameters in the CVD process, so far, only about 10 layers of Gr can be prepared using this method.

[0003] After extensive research, the inventors found that the prior art did not pay attention to the difference in the lattice constant between Gr and the base material, which resulted in a certain degree of mismatch when the two formed an interface, which not only affected the bonding strength of the interface, but also caused the formation of an interface at the interface. Mismatch dislocations, which in turn affect the free transfer of electrons at the interface, so that there is a disadvantage that the ultra-high carrier mobility of Gr cannot be fully utilized, and the conductivity of the Gr / Cu composite wire is improved.

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