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Extreme ultraviolet light and plasma compound atomic scale processing method

A technology of plasma and extreme ultraviolet light, applied in the formation of specific nanostructures, discharge tubes, nanostructure manufacturing, etc., can solve problems such as obstacles, low efficiency, and atomic-scale manufacturing methods have not yet appeared, and achieve improved certainty and low energy. Dispersion, reduction of incident ion energy, and effect on surface damage

Active Publication Date: 2022-05-17
TIANJIN UNIV
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Problems solved by technology

[0003] Existing laboratory techniques for atomic-scale manipulation, such as scanning tunneling microscopy, atomic force microscopy, and scanning transmission electron microscopy, etc., although some of these methods can be used to manipulate individual atoms, their extremely low efficiency prevents them from becoming ideal for product manufacturing. Program
For example, a quantum chip needs to distribute quantum dots on an atomically flat stepped surface. If such a surface is obtained only by removing atoms, the extremely long time and the resulting stability problems are unacceptable.
As a result, full-fledged atomic-scale fabrication methods are yet to emerge

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the accompanying drawings and through specific embodiments. The following embodiments are only descriptive, not restrictive, and cannot limit the protection scope of the present invention.

[0018] The key to improving the selectivity and controllability of atomic layer removal is to reduce the binding energy between atoms on the surface of the material, and at the same time control the action energy of the removal process to be between the surface binding energy and the bulk binding energy. According to this idea, three processing modes can be formed :

[0019] Mode 1. EUV Activation - Plasma Removal

[0020] First, extreme ultraviolet light is used to irradiate the surface of the material, and the surface electrons absorb photons and are promoted to a high-energy state. At the same time, the irradiation power and time are controlled to avoid large-scale atomic emission. At this time, ...

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Abstract

The invention relates to a composite atomic-scale processing method of extreme ultraviolet light and plasma, which uses extreme ultraviolet light and plasma to process the surface of a material to realize atomic-scale processing on the surface of the material. Mode 1 uses extreme ultraviolet light instead of chemical adsorption for surface activation, which broadens the universality of materials and improves efficiency; mode 2 uses extreme ultraviolet light instead of plasma bombardment for material removal, on the one hand avoiding the possibility of introducing impurity elements, On the other hand, since a large number of photons with the same state can coexist (bosons), a very low energy dispersion (ie, high monochromaticity) can be achieved, which improves the certainty of processing; mode 3 in the classical plasma ALE On the basis of this, the extreme ultraviolet enhanced excitation link is added, so that the material removal caused by ion bombardment alone is changed to be jointly determined by the extreme ultraviolet light field and ion bombardment, which can effectively reduce the energy of incident ions and damage the processed surface.

Description

technical field [0001] The invention belongs to the field of atomic and near-atomic scale manufacturing, and relates to extreme ultraviolet light technology and plasma etching technology, in particular to a composite atomic scale processing method of extreme ultraviolet light and plasma. Background technique [0002] The performance of key components in high-tech fields such as information, energy, and materials depends on their precision, and the realization of high precision requires advanced manufacturing technology to guarantee it. Taking integrated circuit chips as an example, since the 1970s to the present, the number of transistors per unit area has been increasing according to the prediction of Moore's Law, which is inseparable from the development of manufacturing technologies such as lithography, ultra-precision machining and measurement. With the development of line width from the current 7nm, 5nm, to 3nm or even smaller, the urgent need for manufacturing technolo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B82Y40/00
CPCB82B3/0009B82Y40/00H01J37/32009H01J37/32H01J2237/334
Inventor 房丰洲
Owner TIANJIN UNIV