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A diamond wire saw preparation process suitable for large-scale semiconductor cutting

A technology of diamond wire saw and preparation process, which is applied in the direction of manufacturing tools, stone processing equipment, metal processing equipment, etc. It can solve the problems of low elastic coefficient of semiconductor wafers, increase the cutting time, and large loss of raw materials, etc., and achieve large breaking The effect of low yarn rate, lower customer cost, and lower raw material cost

Active Publication Date: 2022-06-28
苏州韦度新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the semiconductor industry has gradually changed from mortar cutting to diamond wire cutting. Diamond wire cutting can be used stably for 4-inch-6-inch wafers, but semiconductor wafers of 8 inches and above can only be cut with mortar.
This is because the diamond wire cutting of large-size semiconductor wafers has the following problems: 1) the abrasive grains of the diamond wire are fixed on the steel wire, and the hardness of the diamond is very high. The cutting method is cutting, which easily causes deep scratches on the wafer surface. The damaged layer; while the mortar cutting abrasive particles are in a free state, the cutting method is grinding, and the damaged layer is shallow; a deeper damaged layer means more polishing in the later stage, and the loss of raw materials and working hours is greater.
2) The silicon powder or diamond that is cut off during cutting needs to be discharged in time, and chip removal is more difficult for large-sized wafers. If the silicon powder or diamond is not discharged in time, it will affect the cutting ability, increase the cutting time, and cause lines on the surface of the wafer. Abnormalities such as scars
3) The elastic coefficient of the semiconductor wafer is low, and it is easy to cause hidden cracks or fragments when cutting with the current diamond wire, resulting in large losses

Method used

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  • A diamond wire saw preparation process suitable for large-scale semiconductor cutting
  • A diamond wire saw preparation process suitable for large-scale semiconductor cutting

Examples

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Embodiment 1

[0035] This embodiment is to prepare a diamond wire saw suitable for large-size semiconductor cutting; such as figure 1 As shown, the diamond wire saw is composed of diamond abrasive grains, busbar steel wire and coating. In this embodiment, 120um base steel wire is used to cooperate with diamond powder of D50=6um to produce electroplated diamond wire, and its preparation process includes the following steps:

[0036] 1) Preparation materials: select nickel-plated diamond micropowder with D50=6μm, the nickel weight gain is 40%; the diameter of the busbar steel wire is 120μm; and the plating solution for nickel-plating treatment is prepared.

[0037] 2) Busbar pretreatment: The busbar steel wires are respectively treated with 60g / L sodium hydroxide solution at 60±5℃, washing water, 40g / L sulfamic acid solution at 40±5℃, and washing water to obtain a core wire with a clean surface;

[0038] 3) Pre-plating of busbars: Pre-treated steel wires are deposited with a pre-nickel layer ...

Embodiment 2

[0045] This example is also a diamond wire saw suitable for large-size semiconductor cutting. The difference from Example 1 is that the busbar of the diamond wire saw is a steel wire with a diameter of 140 μm, and the particle size of the diamond powder used is D50=5.0 μm. Other steps are the same as in Example 1, and the size of the obtained finished electroplated diamond wire is 150±2 μm.

Embodiment 3

[0047] This example is also to prepare a diamond wire saw suitable for cutting large-size semiconductors. The difference from Example 1 is that the core wire is a steel wire with a diameter of 130 μm, and the particle size of the diamond powder used is D50=6.5 μm. Other steps are the same as in Example 1, and the size of the obtained finished electroplated diamond wire is 143±2 μm.

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Abstract

The invention discloses a preparation process of a diamond wire saw suitable for cutting large-scale semiconductors. The diamond wire saw is composed of diamond abrasive grains, bus wire and coating. Steps such as sanding, abrasive grain consolidation, steel wire helicalization, drying, and wire take-up; the diamond wire saw prepared by the present invention has a generatrix steel wire diameter of 0.04mm-0.14mm, and the diameter of diamond abrasive grains is D50=5μm-6.5 μm, coating thickness △=1.8μm-3μm, wave height of helical structure H=1d-5d, wavelength L=1cm-5cm, suitable for cutting semiconductor wafers above 8 inches; not only reduces the broken wire rate, but also reduces the surface damage layer, wire It can effectively improve the chip removal ability of the steel wire, reduce the abnormality in the cutting process, improve the cutting efficiency, improve the surface quality of the wafer, and have good economic and practical value.

Description

technical field [0001] The invention relates to a preparation process of a diamond wire saw suitable for large-size semiconductor cutting. Background technique [0002] The diamond abrasive is consolidated on the steel wire by the method of electrodeposition to prepare a serrated wire cutting tool, referred to as "diamond wire saw". The most significant advantage of diamond wire saw is its high cutting efficiency, which is 3-5 times higher than the traditional straight wire mortar cutting efficiency. Among them, semiconductor materials are expensive and the market demand is increasing day by day. Diamond wire cutting can improve its production and cutting efficiency several times and obtain higher benefits. [0003] At present, the semiconductor industry has gradually changed from mortar cutting to diamond wire cutting. 4-inch to 6-inch wafers can be stably used for diamond wire cutting, but semiconductor wafers of 8 inches and above can still only be cut with mortar. This...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D18/00B28D5/04C25D3/12C25D7/06C25D15/00
CPCB24D18/0018B28D5/045C25D7/0607C25D15/00C25D3/12
Inventor 詹宝华李坤堂
Owner 苏州韦度新材料科技有限公司