Method for preparing few-layer Ti3C2Tx material with high etching rate and high stripping rate based on secondary etching method

A secondary etching and etching rate technology, applied in the field of 2D nanomaterials, can solve the problems of low stripping rate, long etching cycle, incomplete etching, etc., to achieve sufficient etching process, excellent product performance, and high stripping rate effect

Active Publication Date: 2021-01-08
JIANGXI UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Therefore, in order to solve the above few-layer Ti 3 C 2 T x In the preparation method of the method, there are problems such as long etching period, incomplete etching and low stripping rate, and it is necessary to provide a high-concentration and few-layer Ti 3 C 2 T x A novel preparation method for nanosheet materials that enables few-layer Ti 3 C 2 T x High-efficiency stripping and dispersion in aqueous solution, no need for later treatment of Ti 3 C 2 T x Long-term ultrasonic stripping to improve Ti 3 C 2 T x The preparation efficiency and product performance, expanding the Ti 3 C 2 T x range of functional applications

Method used

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  • Method for preparing few-layer Ti3C2Tx material with high etching rate and high stripping rate based on secondary etching method
  • Method for preparing few-layer Ti3C2Tx material with high etching rate and high stripping rate based on secondary etching method
  • Method for preparing few-layer Ti3C2Tx material with high etching rate and high stripping rate based on secondary etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0052] Preparation of Few-layer Ti with High Etching Rate and High Stripping Rate Based on Secondary Etching Method 3 C 2 T x The material method specifically includes the following steps:

[0053] (1) Weigh 1.0g Ti 3 AlC 2 Powder, slowly added to 12ml of HF aqueous solution with a mass fraction of 40%, the mixed solution was covered and placed in a fume hood, while stirring in a magnetic stirrer and warming up to 35°C, the magnetic stirrer speed was 500rpm, magnetic stirring for 4h Finally, centrifuge at 4000rpm for 10min, and wash with water several times until neutral to obtain the pre-etched product;

[0054] (2) Use a graduated cylinder to measure 10ml of HCl with a concentration of 3mol / L, and weigh 1.6g of LiF, slowly add LiF to the HCl solution, place the mixed solution in a magnetic stirrer at room temperature and stir for 15min, then magnetically stir The rotation speed of the device is 300rpm, and the mixed solution is used as a secondary etchant after the stir...

Embodiment 2

[0060] Preparation of Few-layer Ti with High Etching Rate and High Stripping Rate Based on Secondary Etching Method 3 C 2 T x The material method specifically includes the following steps:

[0061] Except that the concentration of HCl in (2) is 6mol / L;

[0062] (3) Medium magnetic stirring for 6 hours;

[0063] All the other are identical with embodiment 1.

[0064] After drying the upper suspension, 800 mg of few-layer Ti 3 C 2 T x , calculate Ti according to mass 3 C 2 T x The etch rate is 96%, few layers of Ti 3 C 2 T x The stripping rate is 80%.

[0065] Figure 4 ( Figure 4 (a) and Figure 4 (b)) Preparation of the product few-layer Ti for Example 2 of the present invention 3 C 2 T x The TEM figure of material, as can be seen from the TEM result, the few-layer Ti that embodiment 2 makes 3 C 2 T x The sample still has an ultrathin two-dimensional layered structure, and the nanosheets have relatively large lateral dimensions, indicating that the few-l...

Embodiment 3

[0067] Preparation of Few-layer Ti with High Etching Rate and High Stripping Rate Based on Secondary Etching Method 3 C 2 T x The material method specifically includes the following steps:

[0068] Except that the concentration of HCl in (2) is 12mol / L;

[0069] (3) Medium magnetic stirring for 6 hours;

[0070] All the other are identical with embodiment 1.

[0071] After drying the upper suspension, 850 mg of few-layer Ti 3 C 2 T x , calculate Ti according to mass 3 C 2 T x The etch rate is 95%, few layers of Ti 3 C 2 T x The stripping rate is 85%.

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Abstract

The invention discloses a method for preparing a few-layer Ti3C2Tx material with high etching rate and high stripping rate based on a secondary etching method. The method specifically comprises the following steps: pre-etching Ti3AlC2 with an HF aqueous solution to obtain a pre-etched product; preparing a salt solution formed after the reaction of LiF and HCl as a secondary etching agent; immersing the pre-etched product in the secondary etching agent for secondary etching to obtain a secondary etched product; and processing the secondary etched product to obtain the few-layer Ti3C2Tx materialwith high etching rate and high stripping rate. According to the method for preparing the few-layer Ti3C2Tx material with the high etching rate and the high stripping rate based on the secondary etching method, efficient stripping and dispersion of few-layer Ti3C2Tx in the aqueous solution are achieved, long-time ultrasonic stripping does not need to be conducted on Ti3C2Tx in the later period, the preparation efficiency and product performance of the few-layer Ti3C2Tx are improved, and the functionalized application range is enlarged.

Description

technical field [0001] The invention belongs to the technical field of 2D nanomaterials, and relates to the preparation of few-layer Ti with high etching rate and high stripping rate based on a secondary etching method 3 C 2 T x material method. Background technique [0002] Two-dimensional layered transition metal carbide nanosheets Ti 3 C 2 T x With good conductivity and hydrophilicity, it can be used in lithium-ion batteries, supercapacitors, catalysts, sensors, reinforcement materials in polymers, adsorption materials and electromagnetic interference shielding and other fields. Ti 3 C 2 T x By etchant (such as HF, LiF+HCl salt solution, NH 4 HF 2 etc.) will Ti 3 AlC 2 The Al atoms in the phase are removed, where T x means Ti 3 AlC 2 Functional groups (-OH, -F, =O) attached to the surface after being etched. [0003] Currently, Ti 3 C 2 T x Nanosheets are mainly prepared by etching, ultrasonic / intercalation, and exfoliation. The existing etching techno...

Claims

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Application Information

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IPC IPC(8): C01B32/921B82Y40/00
CPCC01B32/921B82Y40/00C01P2004/03C01P2002/72C01P2004/04C01P2004/22
Inventor 刘柏雄李聪刘智平任世刚周少勇
Owner JIANGXI UNIV OF SCI & TECH
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