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Etching solution for silicon nitride layer and method for preparing semiconductor device using the same

A technology for etching solution and silicon nitride film, which is applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, electrical components, etc., and can solve the problems of reducing the etching speed of silicon oxide film, abnormalities, and bad patterns, etc.

Active Publication Date: 2021-01-12
OCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if only pure phosphoric acid is used to etch the silicon nitride film, not only the silicon nitride film but also the silicon oxide film will be etched along with the miniaturization of devices, and various defects and pattern abnormalities may occur. , so it is necessary to further reduce the etching rate of the silicon oxide film by forming a protective film on the silicon oxide film

Method used

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  • Etching solution for silicon nitride layer and method for preparing semiconductor device using the same
  • Etching solution for silicon nitride layer and method for preparing semiconductor device using the same
  • Etching solution for silicon nitride layer and method for preparing semiconductor device using the same

Examples

Experimental program
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Effect test

preparation example Construction

[0106] The silicon substrate used in the manufacture of semiconductor devices may contain a silicon nitride film (Si x N y ), or may contain both a silicon oxide film and a silicon nitride film (Si x N y ). Furthermore, in the case of a silicon substrate including both a silicon oxide film and a silicon nitride film, the silicon substrate may be in a form in which the silicon oxide film and the silicon nitride film are alternately stacked or stacked in different regions.

[0107] The manufacturing method of a semiconductor device according to the present invention is applicable to the manufacturing process of a computer flash memory device (NAND) device. More specifically, in the process step required to selectively remove the silicon oxide film without loss of the silicon nitride film in a stacked structure for forming a computer flash memory device, it can be performed by using the above-mentioned etching solution.

[0108] As an example, figure 1 It is a schematic cros...

Embodiment

[0114] Preparation of etching solution

[0115] In Examples 1 to 6, the compound represented by Chemical Formula 1 was added to the phosphoric acid aqueous solution to etch the solution so that the initial concentration was 300 ppm.

[0116] The etching solution compositions according to Examples 1 to 6 and Comparative Examples 1 to 3 are shown in Table 1.

[0117] Table 1

[0118]

[0119]

[0120]

experiment example

[0122] At a temperature of 175°C, for the silicon nitride film etching solution having a combination of various examples and comparative examples, a thickness of The thermal oxide layer and the silicon nitride film were immersed in a heated etching solution and etched for 10 minutes.

[0123] Use spectroscopic ellipsometry (nano-scale Nano-View, SE MG-1000 type; Ellipsometery) to measure the thickness of silicon oxide film and silicon nitride film before etching and after etching, and the etching rate is by before etching and after etching silicon oxide film and The value calculated by dividing the thickness difference of the silicon nitride film by the time (10 minutes).

[0124] The measured etching rates are shown in Table 2 below.

[0125] Table 2

[0126]

[0127] As shown in the above Table 2, compared with the silicon nitride film etching solutions of Comparative Examples 1 to 3, the silicon nitride film etching solutions of Examples 1 to 6 can reduce the etching ...

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Abstract

The present invention relates to an etching solution for a silicon nitride film and a method for preparing a semiconductor device using the same, and more particularly, to the etching solution for thesilicon nitride film and the method for preparing a semiconductor device including an etching process performed by using the same. The etching solution of the silicon nitride film contains a compoundhaving a heteroaryl substituent, so that the silicon nitride film etching solution is less likely to decompose and exhibits a high degree of distribution in an aqueous phosphoric acid solution, thereby improving the selectivity of a silicon nitride film with respect to a silicon oxide film.

Description

technical field [0001] The present invention relates to a silicon nitride film etching solution and a method for producing a semiconductor device using the same, and more particularly, to nitrogen capable of improving the etching selectivity of silicon nitride film relative to silicon oxide film when etching silicon nitride film A silicon oxide film etching solution and a method of manufacturing a semiconductor device including the use thereof. Background technique [0002] Currently, there are various methods for etching silicon nitride films and silicon oxide films, and dry etching and wet etching are mainly used. [0003] In general, the dry etching method is an etching method using a gas, and has the advantage of being isotropic compared to the wet etching method, but its productivity is much lower than that of the wet etching method and it is an expensive method, so it tends to be widely used wet etching method. [0004] Generally, a method using phosphoric acid as an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06H01L21/311
CPCC09K13/06H01L21/31111H01L21/30604
Inventor 柳浩成金明炫李浚银
Owner OCI
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