Method for slowing down deposition of gallium nitride on pipe wall in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system

A vapor phase epitaxy, halide technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve problems affecting GaN epitaxial growth rate, uniformity and quality, blocking, reducing GaCl concentration and other issues

Active Publication Date: 2021-01-19
ELECTRIC POWER RESEARCH INSTITUTE OF STATE GRID SHANDONG ELECTRIC POWER COMPANY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the diffusion of various gases, the high temperature of the environment will cause gallium nitride not only to grow on the substrate, but also to grow epitaxially on the entire inner wall of the reaction chamber, especially at the outlet of GaCl, the inner wall of the quartz t

Method used

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  • Method for slowing down deposition of gallium nitride on pipe wall in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system
  • Method for slowing down deposition of gallium nitride on pipe wall in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system
  • Method for slowing down deposition of gallium nitride on pipe wall in halide vapor phase epitaxial growth system and halide vapor phase epitaxial growth system

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Embodiment 1

[0023] A halide vapor phase epitaxial growth system, including a growth area and a gas path system, wherein the gas path system includes a first HCl conduit 1, N 2 Conduit 2 and NH 3 The conduit 3, the first HCl conduit 1 leading to the gallium boat 4, is characterized in that it also includes a second HCl conduit 5 leading to a position close to the GaCl outlet.

Embodiment 2

[0025] A method for slowing down deposition of gallium nitride on tube walls in a halide vapor phase epitaxial growth system, the steps comprising:

[0026] 1. Cleaning and processing of sapphire substrate.

[0027] 2. After the sapphire substrate is placed in the reactor, the temperature is slowly raised to the growth temperature, and the GaN growth can begin. The growth temperature is 1100°C. Gas flow respectively: NH 3 The flow rate is 1500sccm, NH 3 The carrier gas flow is 1000 sccm, the HCl flow of the first HCl conduit 1 is 20 sccm, the HCl carrier gas flow is 500 sccm, the corrosion HCl flow of the second HCl conduit 5 is 5 sccm, and its carrier gas is 500 sccm. The total nitrogen is 15000 sccm. The sample is a 2-inch sapphire substrate. The reaction chamber pressure is 1 atmosphere.

[0028] 3. After growing to a suitable time, slowly cool down to room temperature at a certain rate, and take out the sample. In this embodiment, the growth time is about 60 minutes...

Embodiment 3

[0031] A method for slowing down deposition of gallium nitride on tube walls in a halide vapor phase epitaxial growth system, the steps comprising:

[0032] 1. Cleaning and processing of sapphire substrate.

[0033] 2. After the sapphire substrate is placed in the reactor, the temperature is slowly raised to the growth temperature, and the GaN growth can begin. The growth temperature is 1050°C. Gas flow respectively: NH 3 The flow rate is 1500sccm, NH 3 The carrier gas flow is 1000 sccm, the HCl flow of the first HCl conduit 1 is 20 sccm, the HCl carrier gas flow is 500 sccm, the corrosion HCl flow of the second HCl conduit 5 is 10 sccm, and its carrier gas is 500 sccm. The total nitrogen is 15000 sccm. The sample is a 2-inch sapphire substrate. The reaction chamber pressure is 1 atmosphere.

[0034] 3. After growing to a suitable time, slowly cool down to room temperature at a certain rate, and take out the sample. In this embodiment, the growth time is about 60 minute...

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Abstract

The invention discloses a gas path system of a halide vapor phase epitaxial growth system, which comprises a first HCl conduit, an N2 conduit and an NH3 conduit, the first HCl conduit is communicatedto a gallium boat, and the gas path system also comprises a second HCl conduit which is communicated to a position close to an outlet of a gallium boat area. The invention further discloses a halide vapor phase epitaxial growth system comprising the gas path system and a method for slowing down deposition of gallium nitride on the pipe wall in the halide vapor phase epitaxial growth system. A pathof HCl is added in a gallium boat area to be close to an outlet, mixed with GaCl reacted in a low-temperature area and then transported, when the mixed gas of HCl and GaCl passes through a quartz tube at the outlet, the HCl and GaN pre-reacted and deposited on the tube wall can be subjected to corrosion reaction, deposition on the pipe wall is slowed down, and therefore the growth rate and uniformity cannot be greatly reduced due to reduction of the pipe inner diameter. The product generated by the corrosion reaction is GaCl, so that the concentration of the reactant transported to the upperpart of the substrate can be improved, the long-time high-stability rate of GaN growth on the substrate is maintained, and the gallium utilization rate is improved.

Description

technical field [0001] The invention relates to a gas path system of a halide vapor phase epitaxy growth system, a halide vapor phase epitaxy growth system and a method for slowing down deposition of gallium nitride on tube walls in the halide vapor phase epitaxy growth system, belonging to the technical field of semiconductor materials. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. [0003] There are many methods for the growth of GaN-based materials, such as metal organic vapor phase epitaxy (MOCVD), high temperature and high pressure synthesis GaN single crystal, molecular beam epitaxy (MBE), sublimation method and halide vapor phase epitaxy (HVPE), etc. Due to the limitations of the physical properties of GaN-based materials, the growth of GaN bulk single crystals is ver...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B25/14
CPCC30B29/406C30B25/14Y02P70/50
Inventor 修向前李悦文张荣谢自力陈鹏刘斌郑有炓李红梅
Owner ELECTRIC POWER RESEARCH INSTITUTE OF STATE GRID SHANDONG ELECTRIC POWER COMPANY
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