A kind of silicon etchant for removing grain

A technology of etching solution and deionized water, which is applied in the direction of surface etching composition, chemical instrument and method, etc., can solve the problems of unsatisfactory mechanical grinding sheet etching, difficult control of etching rate, uneven etching surface, etc., so as to omit polishing Effects of degraining process, increasing solubility, and increasing etching rate
CN112251233BActive Publication Date: 2021-09-07湖北兴福电子材料股份有限公司
5 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
湖北兴福电子材料股份有限公司
Publication Date
2021-09-07

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a silicon etchant for removing grain. The etching solution is composed of nitric acid, hydroxylamine nitrate, fluorosulfonic acid, ammonium bifluoride, xenon difluoride, sulfuric acid, thickener and deionized water. Wherein the thickener can be any one of polyacrylamide, hexanol, octanol, polyethylene glycol, polyvinylpyrrolidone, etc. In the present invention, hydroxylammonium nitrate reacts with fluorosulfonic acid to generate hydrofluoric acid, and xenon difluoride slowly decomposes to generate hydrofluoric acid in an acidic environment, all of which increase the concentration of hydrofluoric acid in the etching solution composition, and can inhibit the combination of the above etching solutions. The time-dependent change of the material maintains a stable etching rate. The anti-grinding etchant of the present invention can be directly used in the roughening process of the back of the abrasive disc to etch away the deep mechanical grains, omitting the polishing and de-grinding process, saving costs, improving production efficiency, and maintaining stability etching life.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the cross-technical field of wet electronic chemicals and roughening processing on the back of wafers, and in particular relates to a silicon etchant for removing abrasive grains. Background technique

[0002] In the manufacture of integrated circuit chips, it is necessary to inject metal on the back of the silicon chip. This metal layer can be used as a metal layer for electrodes, bonding, and heat conduction, thereby achieving the effect of heat dissipation and reducing resistance. However, the backside of the wafer needs to be roughened before the backside metallization process, otherwise the surface of the silicon wafer is too smooth, it is difficult for metal ions to adhere and stay on the surface, and it is difficult for the metal layer to be closely connected with the substrate, which will lead to peeling of the metal layer and increase in resistance , Affect the reliability of semiconductor devices. There are already s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More