Composition for forming silicon-containing resist underlayer film and patterning process
A technology of resist lower layer and composition, which is applied in the direction of coating, originals for photomechanical treatment, and photoplate making process of patterned surface, etc., which can solve the problem of hole pattern, groove pattern resolution, focal length latitude deterioration, Solve the problems of lower contrast and lower contrast of exposure light, and achieve the effect of excellent dry etching selectivity and high etching selectivity
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[0342] Hereinafter, although a synthesis example, an Example, and a comparative example are illustrated and this invention is concretely demonstrated, this invention is not limited to these descriptions. In addition, in the following examples, % represents mass %, and molecular weight measurement was performed by GPC.
Synthetic example 1
[0345] A mixture of 17.0 g of monomer 101, 53.3 g of monomer 102, and 7.5 g of monomer 130 was added to a mixture of 200 g of methanol, 0.1 g of methanesulfonic acid, and 60 g of deionized water, and kept at 40° C. for 12 hours. Its hydrolytic condensation. After completion of the reaction, 200 g of propylene glycol ethyl ether (PGEE) was added, and by-product alcohol was distilled off under reduced pressure. 1000 ml of ethyl acetate and 280 g of PGEE were added here, and the aqueous layer was liquid-separated. 100 ml of ion-exchanged water was added to the remaining organic layer, stirred, left still, and liquid-separated. Repeat this step 3 times. The remaining organic layer was concentrated under reduced pressure to obtain 480 g of a silicon-containing compound 1 in PGEE (10% compound concentration). When the polystyrene-equivalent molecular weight of this substance was measured, Mw=2,400.
[0346] Using the monomers (reaction raw materials for silicon-containing polyme...
Synthetic example 56
[0348] A mixture of 6.8 g of monomer 101, 60.9 g of monomer 102, and 20.1 g of monomer 149 was added to a mixture of 200 g of methanol, 0.1 g of 35% hydrochloric acid, and 60 g of deionized water, and kept at 40° C. for 12 hours. Its hydrolytic condensation. After the reaction, 620 g of propylene glycol ethyl ether (PGEE) was added, and by-product alcohol was distilled off under reduced pressure to obtain 570 g of a PGEE solution of silicon-containing compound 20 (compound concentration: 10%). When the polystyrene-equivalent molecular weight of this substance was measured, Mw=2,100.
[0349] Using the monomers shown in Table 1-2 under the same conditions as Synthesis Example 56, Synthesis Example 57 to Synthesis Example 60 were carried out to obtain the target substances respectively.
[0350] [Table 1-1]
[0351]
[0352]
[0353]
[0354] [Table 1-2]
[0355]
[0356] [chem 43]
[0357]
[0358] [chem 44]
[0359]
[0360] [Synthesis of Silicon-Contain...
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