Thin film forming method and semiconductor light emitting device manufacturing method
A light-emitting element and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, the structural details of semiconductor lasers, semiconductor devices, etc., can solve the problems of film lamination strength decrease, film peeling, film quality difference, etc., to improve reliability , Increased bonding strength and dense film
Inactive Publication Date: 2003-10-01
PANASONIC CORP
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Problems solved by technology
[0006] However, when using the above-mentioned existing ECR sputtering method, there are following problems: due to different film-forming conditions, the deposition rate of the deposited film is not stable, and the quality of the film will be different.
[0009] 1. The conditions before film deposition, for example, the pressure (vacuum degree) before plasma generation will cause the deposition rate to be unstable
[0010] 2. Contamination of the surface of the sample on which the thin film will be deposited, especially the contamination of organic substances will cause the deposition rate to be unstable
[0011] 3. When repeatedly depositing multiple layers of film, the deposition rate of the film after the second layer will be unstable
[0012] 4. Pollution on the surface of the sample and a significant decrease in the bonding strength of the film will cause the formed film to peel off
Method used
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no. 1 Embodiment
[0039] A first embodiment of the present invention will be described with reference to the drawings.
[0040] figure 1 A schematic cross-sectional view of an ECR sputtering apparatus is shown, which is used to realize the thin film forming method according to the first embodiment of the present invention. like figure 1 As shown, the ECR sputtering device 10 includes a plasma generation chamber 11, which has a circular opening 11a on its top, and a waveguide 12 that passes into a microwave with a frequency of 2.45 GHz at its bottom; and places and deposits a film on it. The film deposition chamber (sputtering chamber) 22 of the sample 21 on the top. Here, the sample 21 is assumed to be, for example, a substrate on which a semiconductor laser element is formed. The lower part of the plasma generation chamber 11 is connected with a gas inlet pipe 13, through which, for example, argon (Ar) is fed in as a sputtering gas and a cleaning gas; oxygen (O2) is fed in as a reaction gas...
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Abstract
Electron cyclotron resonance (ECR) plasma method is used to allow the plasmaized reaction gas and the atoms or molecules detached from the solid target (23) by the bombardment of the plasmaized gas to be in the sample (21) The surface reacts to deposit a thin film (27) on the surface of the sample (21). At this time, the surface of the solid target (23) is cleaned with the reactive gas that has been plasmaized, and then the film (27) is deposited. Film (27).
Description
technical field [0001] The present invention relates to a method for forming a thin film made of metal or silicon oxide film, nitride film, etc., and a method for manufacturing a semiconductor light-emitting device, especially a semiconductor laser device, using the method. Background technique [0002] We are widely using metal oxide films such as titanium oxide (TiO2), aluminum oxide (Al2O3), tantalum oxide (TaO2), zirconium oxide (ZrO2) and niobium oxide (Nb2O5), or silicon oxide films (SiO2) as semiconductor components. insulating film. Because the refractive index of SiO2, Al2O3 and TiO2 is easy to control, they are used as semiconductor light-emitting elements, especially the end surface covering materials of semiconductor laser elements. [0003] Hitherto, as described in Japanese Patent Laid-Open Publication No. Hei 6-97570, thin films of Al2O3, TiO2 or SiO2 are deposited by a magnetron sputtering apparatus. In this case, an oxide having the same composition as tha...
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IPC IPC(8): C23C14/00C23C14/35C23C14/56H01L21/31H01L21/314H01L21/316H01L21/318H01L33/10H01L33/60H01S5/00H01S5/02H01S5/028
CPCC23C14/0036C23C14/228C23C14/357C23C14/564H01L21/02197H01L21/02266H01S5/028
Inventor 木户口勋足立秀人大西俊一
Owner PANASONIC CORP