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Preparation method of graphene/copper composite metal interconnection line

A composite metal and graphene technology, applied in semiconductor/solid-state device components, electrical components, electrical solid-state devices, etc. Issues such as large power/ground network IR drop

Pending Publication Date: 2021-02-09
KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase of the resistivity of the interconnection wire will significantly increase the signal delay in the integrated circuit and increase the IR voltage drop of the power supply / ground wire network, thereby seriously affecting the overall performance of the circuit. In addition, due to the copper interconnection wire resistivity The increase of and the introduction of low dielectric materials will lead to serious problems of self-heating effect and heat dissipation of interconnection lines
Therefore, the deterioration of the electrical performance and the reduction of reliability of the traditional copper interconnection wires have become a great obstacle to the development of VLSI in the future.

Method used

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  • Preparation method of graphene/copper composite metal interconnection line
  • Preparation method of graphene/copper composite metal interconnection line
  • Preparation method of graphene/copper composite metal interconnection line

Examples

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preparation example Construction

[0031] The invention provides a kind of preparation method of graphene / copper composite metal interconnection line, comprises the following steps:

[0032] A) mixing copper powder and graphene and then ball milling to obtain a mixed powder; the graphene accounts for 1 to 8% of the mass of the mixed powder;

[0033] B) Under a protective atmosphere, the mixed powder is subjected to microwave hot pressing sintering, and after the microwave hot pressing sintering is completed, the obtained blank is subjected to hot isostatic pressing to obtain a copper / graphene target;

[0034] The vacuum degree of the microwave hot pressing sintering reaches 10 -4 When Pa is below, start to heat up at a rate of 10-20°C / min. After rising to 500-600°C, then rise to 750-950°C at a rate of 20-30°C / min, and keep warm for 0.1-1 hour;

[0035] The pressure of the hot isostatic pressing is 130-180MPa; the temperature of the hot isostatic pressing is 900-1000°C; the holding time of the hot isostatic pre...

Embodiment 1

[0052] Place the etched silicon (001) substrate to be coated in deionized water, wherein the resistivity of deionized water is 1.8×105Ωm, place the silicon substrate in ultrasonic waves, the frequency of ultrasonic waves is 50KHz, and the cleaning time is 10min. Remove impurities on the surface of the substrate to obtain a clean and pollution-free silicon substrate.

[0053] Take high-purity copper powder (about 1-2 microns in particle diameter, spherical shape) and graphene (1.5 microns in particle diameter. Purity 99.95%) in mass proportion, wherein graphene accounts for 1% of the quality of the mixed powder. %. Put the mixed powder in a ball mill, the balls of the ball mill are zirconia, the mass ratio of the ball to material is 15:1, and the high-purity Ar 2 As a shielding gas to prevent oxidation of copper powder. The rotating speed of the ball mill is 500r / min, and the ball milling time is 4h.

[0054] The above-mentioned mixed powder mixed uniformly is placed in a ho...

Embodiment 2

[0058] A graphene / copper composite metal interconnection wire was prepared according to the preparation method in Example 1, except that in this example, graphene accounted for 3% of the mass of the mixed powder.

[0059] Test the resistivity and tensile strength of the graphene / copper interconnection wire in the present embodiment, the result is that the resistivity is 1.61×10 -8 Ω·m, the tensile strength is 327.4MPa.

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Abstract

The invention provides a preparation method of a graphene / copper composite metal interconnection line, which comprises the following steps: A) mixing copper powder and graphene, and carrying out ballmilling to obtain mixed powder, wherein the graphene accounts for 1-8% of the mass of the mixed powder; and B) in a protective atmosphere, performing microwave hot-pressing sintering and hot isostaticpressing on the mixed powder to obtain a copper / graphene target material; when the vacuum degree of the microwave hot-pressing sintering reaches 10<-4>Pa or below, starting to heat at the heating rate of 10-20 DEG C / min, and after heating to 500-600 DEG C, heating to 750-950 DEG C at the speed of 20-30 DEG C / min, and keeping the temperature for 0.1-1 hour; and C) performing magnetron sputtering coating on the surface of the etched silicon substrate by using the copper / graphene target material to obtain the graphene / copper composite metal interconnection line. According to the method, the heatdissipation capability and the transmission rate of the device are enhanced, and the damage of electron migration to the material performance is reduced.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and devices, in particular to a method for preparing graphene / copper composite metal interconnection wires. Background technique [0002] Interconnection is to connect individual components in the same chip into circuit modules with certain functions. With the development of integrated circuits, the feature size is getting smaller and smaller, and the power supply voltage cannot be reduced proportionally, which causes the current density in the interconnection line to rise sharply. In addition, the increase in the density of integrated circuit devices has led to The line density and the heat generated by the process are increasing, which is exacerbating the severity of the interconnect reliability. [0003] In the sub-micron and deep sub-micron stages, compared with the gate delay, the delay RC caused by the interconnection accounts for an increasing proportion of the total delay. A...

Claims

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Application Information

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IPC IPC(8): H01L23/48H01L23/482H01L23/522H01L23/532
CPCH01L23/481H01L23/4827H01L23/522H01L23/53228H01L23/53276
Inventor 杜勇梁晓新何霜霜
Owner KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI