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Control method for CMP rate selectivity of multi-layer copper interconnection barrier layer

A control method and technology of barrier layer, which can be used in manufacturing tools, water-based dispersants, grinding devices, etc., can solve problems such as difficult decomposition, and achieve the effects of simple ingredients, improved yield and yield, and good dispersion.

Active Publication Date: 2021-02-12
HEBEI UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, BTA has certain toxicity and is difficult to decompose
Moreover, hydrogen peroxide is mostly used as the oxidant in the world, and its self-decomposition becomes an important factor restricting the stability of the polishing fluid.

Method used

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  • Control method for CMP rate selectivity of multi-layer copper interconnection barrier layer
  • Control method for CMP rate selectivity of multi-layer copper interconnection barrier layer
  • Control method for CMP rate selectivity of multi-layer copper interconnection barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Take 250ml of silica sol with an abrasive mass fraction of 40%, the particle size is 50nm-90nm, and the dispersion is between ±3%; citric acid chelated copper 5g; potassium citrate 5g; FA / O II type chelating agent 0.5g . Fatty alcohol polyoxyethylene ether 3g, dodecylbenzenesulfonic acid 1g. The specific preparation method is as follows: first mix FA / O type II chelating agent, citric acid chelated copper, potassium citrate, fatty alcohol polyoxyethylene ether, dodecylbenzenesulfonic acid and add appropriate amount of ionized water, then add silicon In the sol, stir evenly by means of step-by-step mixing, and finally make up to 1000g with deionized water, and continue stirring evenly to obtain polishing solution S1.

[0045] Test monitoring: the pH value of the polishing solution is 9.5, and the particle size is 80-120nm.

[0046] Experimental test: AMAT-LK CMP polishing machine produced by Applied Materials with the prepared polishing liquid S1; the working pressure i...

Embodiment 2

[0048] Take 250ml of silica sol with a mass fraction of 40% of the abrasive material, the particle size is 50nm-90nm, and the dispersion is between ±3%; citric acid chelated copper 10g; potassium citrate 5g; fatty alcohol polyoxyethylene ether 3g, lauryl Benzenesulfonic acid 1g. FA / O II chelating agent 0.5g, as a pH regulator, buffer and chelating agent. The specific preparation method is as follows: first mix FA / O type II chelating agent, citric acid chelated copper, potassium citrate, fatty alcohol polyoxyethylene ether, dodecylbenzenesulfonic acid and add appropriate amount of ionized water, then add silicon In the sol, stir evenly by means of step-by-step mixing, and finally make up to 1000g with deionized water, and continue stirring evenly to obtain polishing liquid S2.

[0049] Test monitoring: the pH of the polishing solution is 9.5, and the particle size is 80-120nm.

[0050] Experimental test: AMAT-LK CMP polishing machine produced by Applied Materials with the pre...

Embodiment 3

[0052] Take 250ml of silica sol with a mass fraction of 40% of the abrasive material, the particle size is 50nm-90nm, and the dispersion is between ±3%; citric acid chelated copper 10g; potassium citrate 10g; fatty alcohol polyoxyethylene ether 3g, lauryl Benzenesulfonic acid 1g. FA / O II chelating agent 0.5g, as a pH regulator, buffer and chelating agent. The specific preparation method is as follows: first mix FA / O type II chelating agent, citric acid chelated copper, potassium citrate, fatty alcohol polyoxyethylene ether, dodecylbenzenesulfonic acid and add appropriate amount of ionized water, then add silicon In the sol, stir evenly by means of step-by-step mixing, and finally make up to 1000g with deionized water, and continue to stir evenly to obtain polishing liquid S3.

[0053] Test monitoring: the pH of the polishing solution is 9.5, and the particle size is 80-120nm.

[0054] Experimental test: AMAT-LK CMP polishing machine produced by Applied Materials with the pre...

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Abstract

The invention discloses a method for controlling CMP rate selectivity of a multi-layer copper interconnection barrier layer, and aims to provide a method capable of controlling removal rates of different materials so as to control butterfly-shaped pits and corrosion pits. A polishing solution is added to a polishing machine for polishing under the conditions that the working pressure is 1-2 PSI, the rotating speed of a polishing disc is 80-100 revolutions per minute, the rotating speed of a polishing head is 78-98 revolutions per minute and the flow of the polishing solution is 200-300 ml / min;the polishing solution is composed of the following components: 5-20% of silica sol, 0.001-10% of a functional component, 0.001-10% of a surfactant and the balance of deionized water; the functionalcomponent is composed of an agent A, an agent B and an agent C; the agent A is any one of an FA / O chelating agent, tetrahydroxyethyl ethylenediamine, ethylenediamine and triethanolamine; the agent B is any one of copper sulfate, copper glycinate, copper citrate and citric acid chelated copper; and the agent C is one or any mixture of potassium nitrate, potassium citrate and potassium tartrate. According to the method, the chip yield and the yield can be improved.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing, and more specifically relates to a method for controlling the CMP rate selectivity of a multilayer copper interconnect barrier layer, an alkaline polishing solution and a preparation method for the alkaline polishing solution. Background technique [0002] With the reduction of integrated circuit technology nodes, due to the existence of disc pits and etch pits during chemical mechanical planarization, many adverse effects have been brought to multilayer copper wiring, such as the impact of stacking effects and the impact of RC delay. etc., will lead to the inability to achieve a high degree of planarization after CMP, and will leave uneven defects on the wafer surface. If there are too many defects, it will directly affect the yield and yield of the chip. Therefore, the requirements for dishing and pitting depth are becoming more and more stringent. [0003] When the barri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04C09G1/04
CPCB24B37/04B24B37/044C09G1/04
Inventor 王辰伟刘玉岭罗翀王胜利孙鸣高宝红
Owner HEBEI UNIV OF TECH
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