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Photoelectrochemical photodetector based on plasmon enhancement and its preparation method

A photoelectrochemical and photodetector technology, applied in the field of photodetectors, can solve the problems of not fully exploiting the application potential of plasmon enhancement effect, unfavorable to improve device performance, uneven particle distribution, etc., so as to improve the photocurrent response and structure. Simple, streamlined production process

Active Publication Date: 2021-12-10
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

Such as excessive particle size, uneven particle distribution, doping caused by high-temperature calcination, etc., are not conducive to improving device performance
Traditional optoelectronic devices mainly focus on the scattering effect of large particle size (greater than 30nm) plasmonic metals, but do not pay attention to the thermal electron injection and near-field enhancement effect of small particle plasmonic metals, and the plasmonic enhancement effect has not been fully developed in optoelectronics. The application potential of the device

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  • Photoelectrochemical photodetector based on plasmon enhancement and its preparation method
  • Photoelectrochemical photodetector based on plasmon enhancement and its preparation method
  • Photoelectrochemical photodetector based on plasmon enhancement and its preparation method

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Embodiment Construction

[0052] Photodetectors composed of traditional MSM, Schottky junctions, and p-n / n-n junctions cannot work when the power is off. The process is complex and costly, the manufacturing precision is high, the photoresponsivity is low, and the response time cannot be adjusted. In addition, traditional optical detectors have a wide variety of materials and different preparation methods, which is not conducive to large-scale production; due to the fixed selection of materials and a single detection wavelength band, they can only be applied to specific detection scenarios and are not universal.

[0053] Common photoelectrochemical photodetectors have the following advantages: (1) they can be powered by themselves without additional power. (2) The structure is simple, the manufacturing process is low, the cost is low, and it is beneficial to large-scale production. However, the existing photoelectrochemical photodetectors are usually based on the aqueous three-electrode system. The dete...

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Abstract

A photoelectrochemical photodetector, the photoelectrochemical photodetector includes a photoelectrode, the photoelectrode includes a conductive substrate, and also includes gallium nitride (GaN)-based nanowires grown on the surface of the substrate, the The surface of GaN-based nanowires is decorated with a layer of uniform nanoparticles. The invention also discloses a preparation method of the photoelectrochemical light detector. In the GaN-based photoelectrochemical light detector of the present invention, metal Rh (or Ag, Au, Al and other metals) nanoparticles with surface plasmon enhancement effect are modified on Al x Ga 1‑x N, In x Ga 1‑x N, In y al x Ga 1‑x‑y N, B x al y Ga 1‑x‑y N, B x In y Ga 1‑x‑y On the surface of N nanowires, the amount of photogenerated carriers generated by the semiconductor nanowire itself can be increased, and hot electrons can be injected into the semiconductor at the same time, and finally the photocurrent response of the photoelectrochemical photodetector can be improved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photoelectrochemical detector based on plasmon enhancement effect that can improve detection performance and a preparation method thereof. Background technique [0002] Photodetectors, devices that capture light signals and convert them into electrical signals, are widely used in imaging, communications, sensing, computing and emerging wearable devices. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc.; in the ultraviolet band, it is mainly used for flame detection and missile alarm. , ozone monitoring and non-line-of-sight optical communication, etc. Most of the existing photodetecto...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20G01J1/42G01J1/48
CPCH01G9/205H01G9/2013G01J1/42G01J1/48Y02E10/542Y02P70/50
Inventor 孙海定汪丹浩刘鑫康阳
Owner UNIV OF SCI & TECH OF CHINA
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