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Preparation method of vapor chamber upper cover plate and vapor chamber

A technology of vapor chamber and cover plate, which is applied in the field of heat dissipation. It can solve the problems of poor bonding force between capillary structure and cover plate, capillary performance cannot be kept stable, and complicated sintering process, so as to broaden the application range, improve strength, and simple process. Effect

Active Publication Date: 2021-03-09
AAC TECH NANJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the manufacturing methods of the capillary structure of the chamber cover plate in the industry mainly include copper powder sintering and copper mesh bonding. The sintering process is complicated, the efficiency is low, and the price is high. The capillary structure of the capillary structure has poor bonding force with the cover plate, so that the capillary performance cannot be kept stable, the yield is not high, and it is difficult to produce on a large scale

Method used

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  • Preparation method of vapor chamber upper cover plate and vapor chamber
  • Preparation method of vapor chamber upper cover plate and vapor chamber
  • Preparation method of vapor chamber upper cover plate and vapor chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] S1. Fabrication of the upper cover and the lower cover: obtained by etching the copper sheet, the thickness of the copper sheet is between 0.05mm-0.4mm.

[0067] S2. Degreasing: The solution used is a weakly alkaline degreasing solution, the ingredients include trisodium phosphate 50g / L, sodium carbonate 20g / L, sodium metasilicate 20g / L, OP emulsifier 3ml / L, and the solution temperature is 50°C , Put the upper cover plate into the solution for cathodic electrolysis for 5min, the current density is 2A / dm 2 , and then immediately rinse with pure water.

[0068] S3. Rust removal: use a rust remover with a mixed acid solution, and its ingredients include sulfuric acid 200g / L, nitric acid 10g / L, hydrochloric acid 5g / L, urea 10g / L, and benzotriazole 0.5g / L. Soak the upper cover in the solution for 3 minutes at room temperature, and then immediately wash it with pure water.

[0069] S4. Electrochemical deposition of copper: using solution is the mixture of copper sulfate 80g...

Embodiment 2

[0073] S1. Fabrication of the upper cover and the lower cover: obtained by etching the copper sheet, the thickness of the copper sheet is between 0.05mm-0.4mm.

[0074] S2. Degreasing: The solution used is a weakly alkaline degreasing solution, the ingredients include trisodium phosphate 20g / L, sodium carbonate 40g / L, sodium metasilicate 30g / L, OP emulsifier 3ml / L, and the solution temperature is 50°C , put the upper cover plate into the solution for cathodic electrolysis for 3 minutes, and the current density is 3A / dm 2 , and then immediately rinse with pure water.

[0075] S3. Rust removal: use a rust remover with a mixed acid solution, and its ingredients include sulfuric acid 150g / L, nitric acid 15g / L, hydrochloric acid 5g / L, urea 5g / L, and benzotriazole 0.8g / L. Soak the upper cover in the solution for 5 minutes at room temperature, and then immediately wash it with pure water.

[0076] S4. Electrochemical deposition of copper: using solution is the mixture of copper sul...

Embodiment 3

[0080] S1. Fabrication of the upper cover and the lower cover: obtained by etching the copper sheet, the thickness of the copper sheet is between 0.05mm-0.4mm.

[0081]S2. Degreasing: The solution used is a weakly alkaline degreasing solution, the ingredients include 40g / L trisodium phosphate, 30g / L sodium carbonate, 10g / L sodium metasilicate, 1ml / L OP emulsifier, and the solution temperature is 60°C , Put the upper cover plate into the solution for cathodic electrolysis for 2min, the current density is 5A / dm 2 , and then immediately rinse with pure water.

[0082] S3. Rust removal: Use a rust remover with a mixed acid solution, and its ingredients include sulfuric acid 250g / L, nitric acid 5g / L, hydrochloric acid 10g / L, urea 10g / L, and benzotriazole 1g / L. Soak the upper cover in the solution for 2 minutes at room temperature, and then immediately wash it with pure water.

[0083] S4. Electrochemical deposition of copper: using solution is the mixture of copper sulfate 30g / L,...

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Abstract

The invention provides a preparation method of a vapor chamber upper cover plate, the vapor chamber upper cover plate, and a vapor chamber. The preparation method of the vapor chamber upper cover plate comprises the steps that the vapor chamber upper cover plate is manufactured; electrochemical deposition is conducted on the upper cover plate, and a capillary structure layer of a porous structureis formed on the inner wall of the upper cover plate in a deposition mode, specifically, the upper cover plate serves as a cathode of electrochemical deposition, the capillary structure layer is madeof copper, and an electrolyte for electrochemical deposition per liter comprises 30-80 g of copper sulfate, 150-200 g of sulfuric acid, sulfate with sulfate radical concentration of 0.04-0.55 mol / L, and 11.5-46.5 mL of a first additive; and heat treatment is conducted on the capillary structure layer to obtain the vapor chamber upper cover plate with the capillary structure layer. The capillary structure is constructed on the inner side of the vapor chamber through an electrochemical deposition method, the method is convenient to implement, simple in process and low in cost, the constructed capillary structure is easy to control in thickness, good in performance and tightly combined with the cover plate, and the method can be used for manufacturing ultrathin vapor chambers, and overcomes most process defects of a traditional method.

Description

【Technical field】 [0001] The invention relates to the technical field of heat dissipation, in particular to a method for preparing a cover plate on a uniform temperature plate, and a uniform temperature plate. 【Background technique】 [0002] At present, the manufacturing methods of the capillary structure of the chamber cover plate in the industry mainly include copper powder sintering and copper mesh bonding. The sintering process is complicated, the efficiency is low, and the price is high. The bonding force between the capillary structure and the cover plate is poor, so that the capillary performance cannot be kept stable, the yield is not high, and it is difficult to mass-produce. Therefore, it is urgent to develop a capillary structure manufacturing method with simple process, low cost, close combination with the cover plate, stable and efficient performance. 【Content of invention】 [0003] One of the objectives of the present invention is to provide a method for pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D5/00
CPCC25D3/38C25D5/00
Inventor 陈晓杰石一卉方文兵
Owner AAC TECH NANJING
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