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Photoresist, patterning method of photoresist and method for generating printed circuit board

A photoresist and patterning technology, applied in the field of photoresist, can solve the problems of low resolution of photolithography pattern and high degree of roughness of line edge, and achieve the effects of improving dispersibility, improving solubility difference and improving quality

Active Publication Date: 2021-03-09
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a photoresist, a photoresist patterning method, and a method for producing a printed circuit board for the problems of low photolithographic pattern resolution and high line edge roughness of traditional photoresists.

Method used

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  • Photoresist, patterning method of photoresist and method for generating printed circuit board
  • Photoresist, patterning method of photoresist and method for generating printed circuit board
  • Photoresist, patterning method of photoresist and method for generating printed circuit board

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Crystal Synthesis:

[0068] Ti 2 Zr 4 o 4 (OMc) 16 : 1.901g of tetrabutyl titanate, 2.681g of 80% n-butanol solution of zirconium n-butoxide and 4.095g of methacrylic acid were mixed, sealed at room temperature, and crystal Ti was obtained after a certain period of time 4 Zr 4 o 6 (OBu) 4 (OMc) 16 . 0.5gTi 4 Zr 4 o 6 (OBu) 4 (OMc) 16 Dissolve in dichloromethane, add 0.088g acetylacetone, stir for 30 minutes, remove volatile matter, the crude product is Ti 2 Zr 4 o 4 (OMc) 16 and Ti(OBu) 2 (acac) 2 The mixture, the crude product was dissolved in dichloromethane, crystallized and separated to obtain Ti 2 Zr 4 o 4 (OMc) 16 .

[0069] 0.5g metal oxide nanoparticles Ti 2 Zr 4 o 4 (OMc) 12 And 0.05g of photoacid generator N-hydroxynaphthalimide trifluoromethanesulfonic acid was dissolved in 9.45g of solvent propylene glycol monomethyl ether acetate, and filtered with a filter head with a pore size of 0.22 μm. An appropriate amount of the filtered p...

Embodiment 2

[0071] 0.5g metal oxide nanoparticles Ti 2 Zr 4 o 4 (OMc) 12 with Ti(OBu) 2 (acac) 2 The mixture and 0.05g photoacid generator N-hydroxynaphthalimide trifluoromethanesulfonic acid were dissolved in 9.45g solvent propylene glycol monomethyl ether acetate, and filtered with a filter head with a pore size of 0.22 μm. An appropriate amount of the filtered photoresist solution was dropped on the surface of the silicon wafer, and the glue was uniformed at a speed of 2000r / min for 1 minute. Dry the solvent at 100°C for 1 minute. Expose with a low-pressure mercury lamp with a wavelength of 254nm, and the exposure dose is 20mJ / cm 2 , developed with toluene, dried the surface of the silicon wafer with nitrogen, and observed the photolithographic pattern with a scanning electron microscope. The imaging pattern under the optical microscope of this embodiment is as image 3 shown.

Embodiment 3

[0072] Embodiment 3: the composition of photoresist: 5g titanium zirconium oxide nanoparticles Ti 3 Zr 5 o 3 (DMAA) 22 , 0.05g photoacid generator N-hydroxynaphthalimide trifluoromethanesulfonic acid, 4.45g solvent dichloromethane. The developer is selected from para-toluene, ortho-xylene and meta-xylene mixtures.

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Abstract

The present invention discloses a photoresist, which comprises an organic solvent and titanium zirconium oxide nanoparticles, the molecular general formula of the titanium zirconium oxide nanoparticles is TixZryOzLn, wherein x, y and z are respectively and independently selected from any integer from 1 to 6, n is selected from any integer from 5 to 30, and L is an organic matter ligand. The organic ligand has a radical-initiated polymerizable group. The invention also discloses a patterning method of the photoresist. The invention further discloses a method for for generating a printed circuitboard.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to a photoresist, a method for patterning the photoresist and a method for producing a printed circuit board. Background technique [0002] With the continuous improvement of the integration level of large-scale integrated circuits, its feature size is getting smaller and smaller, and the processing size has entered the nanometer level. The development of integrated circuits requires the support of lithography technology, and photoresist / photoresist is the most critical basic material of lithography technology. Photoresist is a kind of mixed material sensitive to light or radiation. It is usually composed of photoresist main material, photosensitizer, solvent and other additives. The main photoresist material mainly includes film-forming resin, molecular glass compound, inorganic oxides etc. Photoresist is irradiated or radiated by ultraviolet light, electron beam, ion beam, e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F1/76
CPCG03F7/004G03F1/76G03F7/32G03F7/0042G03F7/0045C01G25/02G03F7/0048G03F7/028G03F7/2004G03F7/0047G03F7/0043G03F7/039G03F7/027G03F7/038G03F7/325
Inventor 徐宏何向明王晓琳
Owner TSINGHUA UNIV
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