Novel Cr < 3 + >-doped broadband near-infrared fluorescent powder and preparation and application thereof

A near-infrared light and near-infrared technology, which is applied in the field of phosphors, can solve the problems of lack of miniaturization, rapid response, high energy consumption, and need for preheating, and achieves convenient large-scale production, simple production process, and feasible manufacturing method. Effect

Pending Publication Date: 2021-03-26
JIANGXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the common near-infrared light sources on the market mainly include incandescent lamps, halogen lamps, and infrared light-emitting diodes. Disadvantages such as high consumption and low efficiency
[0005] This patent discloses a new type of Cr that has not been reported 3+ Doped with

Method used

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  • Novel Cr &lt; 3 + &gt;-doped broadband near-infrared fluorescent powder and preparation and application thereof
  • Novel Cr &lt; 3 + &gt;-doped broadband near-infrared fluorescent powder and preparation and application thereof
  • Novel Cr &lt; 3 + &gt;-doped broadband near-infrared fluorescent powder and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0032] A new type of Cr 3+ Doped garnet structure broadband near-infrared phosphor, the material is solid powder, the molecular formula is Lu 2 CaMg 1.95 Si 3 o 12 :0.05Cr 3+ . The preparation method is as follows:

[0033] (1) Weigh Lu according to the stoichiometric ratio 2 o 3 : 2.6533g, CaCO 3 : 0.6673g, MgCO 3 : 1.0960g, SiO 2 : 1.2018g, Cr 2 o 3 : 0.0253g. Mix the above raw materials thoroughly, add flux B 2 o 3 , CaF 2 and LiF each 0.0194g, grind evenly, and sieve.

[0034] (2) Put the mixture obtained above into a corundum crucible and move it into a resistance furnace, raise the temperature to 1350° C. for 5 hours at a heating rate of 5° C. / min, and then cool to room temperature with the furnace;

[0035] (3) After fully grinding the sintered product obtained in step (2), washing with absolute ethanol 3 times, drying and sieving, a new type of Cr 3+ Doped garnet structure broadband near-infrared phosphor.

[0036] The near-infrared fluorescent powde...

Embodiment approach 2

[0038] A new type of Cr 3+ Doped garnet structure broadband near-infrared phosphor, the material is solid powder, the molecular formula is Lu 1.8 Ca 1.2 Mg 1.82 Al 0.1 Ge 3 o 12 :0.08Cr 3+ . The preparation method is as follows:

[0039] (1) Weigh Lu(NO 3 ) 3 ·H 2 O: 1.7055g, CaCO 3 : 0.6005g, MgO: 0.3668g, GeO 2 : 1.5695g, Al(NO 3 ) 3 9H 2 O: 0.1876g, Cr(NO 3 ) 3 9H 2 O: 0.1601g. Mix the above raw materials thoroughly, add flux B 2 o 3 、K 2 CO 3 and LiCO 3 0.0470g each, grind evenly, and sieve.

[0040] (2) Put the mixture obtained above into a corundum crucible and move it into a resistance furnace, raise the temperature to 1400° C. for 6 hours at a heating rate of 5° C. / min, and then cool to room temperature with the furnace;

[0041] (3) After fully grinding the sintered product obtained in step (2), washing with absolute ethanol 4 times, drying and sieving, a new type of Cr 3+ Doped garnet structure broadband near-infrared phosphor.

[0042] The n...

Embodiment approach 3

[0044] A new type of Cr 3+ Doped garnet structure broadband near-infrared phosphor, the material is solid powder, the molecular formula is Lu 1.4 Y 0.4 Ca 1.2 Mg 1.35 Ga 0.5 Si 2 GeO 12 :0.15Cr 3+ . The preparation method is as follows:

[0045] (1) Weigh Lu according to the stoichiometric ratio 2 o 3 : 1.3930g, Y 2 o 3 : 0.2258g, CaCO 3 : 0.6005g, MgCO 3 : 0.5691g, SiO 2 : 0.6009g, Ga 2 o 3 : 0.2418, Cr 2 o 3 : 0.057g. Fully mix the above raw materials, add flux LiF: 0.0286g and Li 2 CO 3 : 0.0257g, ground evenly and sieved.

[0046] (2) Put the mixture obtained above into a corundum crucible and move it into a resistance furnace, raise the temperature to 1375° C. for 4 hours at a heating rate of 6° C. / min, and then cool to room temperature with the furnace;

[0047] (3) After fully grinding the sintered product obtained in step (2), washing with absolute ethanol 3 times, drying and sieving, a new type of Cr 3+ Doped garnet structure broadband near-inf...

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Abstract

The invention discloses novel Cr < 3 + >-doped garnet structure near-infrared fluorescent powder and a preparation method of a near-infrared light source. The general chemical formula of the fluorescent powder is A3-yCayB2-x-zCzD3O12: xCr < 3 + >, aRE2O3 (0<x<0.5, 1 <= y < 3, 0< x + z < = 2, 0 < z < 1.5, and 0 < = a < = 0.5), wherein A is one or a combination of more of Lu, Y, Gd, La and the like;B is one or a combination of Mg, Zn, Cu, Ni, Fe, Co, Ti and the like, C is one or a combination of Sc, In, Al, Ga and the like, and D is one or a combination of Ge, Si, Ti, Sn and the like; RE is oneor a combination of more of Yb, Nd, Ce, Er and Pr; Cr<3 +> is luminescent ion. The prepared fluorescent powder can be effectively excited by blue light and ultraviolet light, and the packaged near-infrared light source has strong near-infrared broadband emission, so that the fluorescent powder can be widely applied to the fields of plant illumination, food detection and the like.

Description

technical field [0001] The invention relates to a kind of fluorescent powder used in the field of luminescence, in particular to a near-infrared luminescent material converted from the fluorescent powder and its application in the fields of plant lighting and food detection. Background technique [0002] With the continuous development of science and technology and the unremitting efforts of scientists, near-infrared technology has been widely used in various fields such as security monitoring, unmanned driving, biomedical imaging, and medical treatment. At present, the common near-infrared light sources on the market mainly include incandescent lamps, halogen lamps, and infrared light-emitting diodes. High consumption, low efficiency and other shortcomings. However, infrared light-emitting diodes have a narrow emission band, the peak wavelength will shift, and the luminous intensity drops seriously at high temperatures, so they cannot be widely used in near-infrared techno...

Claims

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Application Information

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IPC IPC(8): C09K11/79C09K11/80H01L33/50
CPCC09K11/7708C09K11/7776H01L33/502
Inventor 叶信宇韩磊聂文东赵玉磊陈广左嘉兴李燕
Owner JIANGXI UNIV OF SCI & TECH
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