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Semiconductor cleaning agent and preparation method thereof

A cleaning agent and semiconductor technology, which is applied in the preparation of detergent mixture compositions, detergent compositions, detergent compounding agents, etc., can solve the problem of unsatisfactory removal effect of strong lye cleaning agents, eutrophication of water sources, and poor environment. friendly and other problems, to achieve the effect of rapid peeling and emulsification of oil stains, meeting production needs, and excellent dispersion.

Inactive Publication Date: 2021-04-02
德锡化学(山东)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Among the existing silicon wafer cleaning solutions, hydrochloric acid, strong alkali, or surfactants containing phosphates are selected as cleaning agents, but hydrochloric acid is corrosive and cannot remove particles and organic components. The removal effect is not ideal. Although the cleaning agent with phosphate surfactants has a good cleaning effect, it is not friendly to the environment and may easily cause problems such as eutrophication of water sources and water pollution.

Method used

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  • Semiconductor cleaning agent and preparation method thereof
  • Semiconductor cleaning agent and preparation method thereof
  • Semiconductor cleaning agent and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] S1. Configure the first mixed solution:

[0038] Its ingredients and dosage are as follows:

[0039] Organic solvents:

[0040] Diethylene glycol butyl ether 1.5g

[0041] 2-Methyl-2,4-pentanediol 2.5g

[0042] Nonionic Surfactants:

[0043] DOW EH-9 Isomerized Alcohol Polyoxyethylene Ether 2.5g

[0044] Octylphenol polyoxyethylene polyoxypropylene ether 0.5g

[0045] Anionic surfactants:

[0046] Ethanolamine dodecylbenzenesulfonate 4.5g

[0047] Sodium dihexyl succinate monosulfonate 2g

[0048] Sodium xylene sulfonate 3g

[0049] Preparation process: Add 100 grams of deionized water to the reactor, slowly add 1.5 grams of diethylene glycol butyl ether, stir to disperse and dissolve; then slowly add 2.5 grams of 2-methyl-2,4-pentanediol, stir to disperse and dissolve; Then slowly add 2.5 grams of DOW EH-9 isomeric alcohol polyoxyethylene ether, fully react, disperse and dissolve to a uniform transparent liquid; then slowly add 0.5 g of octylphenol polyoxyethy...

Embodiment 2

[0053] S1. Configure the first mixed solution:

[0054] Its ingredients and dosage are as follows:

[0055] Organic solvents:

[0056] Diethylene glycol butyl ether 2.5g

[0057] 2-Methyl-2,4-pentanediol 2.5g

[0058] Nonionic Surfactants:

[0059] Octylphenol ethoxylate 2.5g

[0060] Isodecanol Polyoxyethylene Ether 1.5g

[0061] Anionic surfactants:

[0062] Triethanolamine dodecylbenzenesulfonate 4.5g

[0063] DOW C10L Alkyl Diphenyl Ether Sulfonate 3.5g

[0064] Sodium xylene sulfonate 3g

[0065] Preparation process: Add 100 grams of deionized water to the reactor, slowly add 2.5 grams of diethylene glycol butyl ether, stir to disperse and dissolve; then slowly add 2.5 grams of 2-methyl-2,4-pentanediol, stir to disperse and dissolve; Then slowly add 2.5 grams of octylphenol polyoxyethylene ether, fully react, disperse and dissolve to a uniform transparent liquid; then slowly add 1.5 grams of isomeric decanol polyoxyethylene ether, fully react, disperse and dissolve...

Embodiment 3

[0069] S1. Configure the first mixed solution:

[0070] Its ingredients and dosage are as follows:

[0071] Organic solvents:

[0072] Diethylene glycol butyl ether 2.5g

[0073] Dipropylene glycol dimethyl ether 3g

[0074] Nonionic Surfactants:

[0075] Isodecanol polyoxyethylene ether 2.5g

[0076] Isomerized tridecyl alcohol polyoxyethylene ether 1.5g

[0077] Anionic surfactants:

[0078] Ethanolamine dodecylbenzenesulfonate 4.5g

[0079] Sodium dihexyl succinate monosulfonate 3.5g

[0080] Clariant SAS-60 Sodium Secondary Alkyl Sulfonate 3g

[0081] Preparation process: Add 100 grams of deionized water to the reaction kettle, slowly add 2.5 grams of diethylene glycol butyl ether, stir to disperse and dissolve; then slowly add 3 grams of dipropylene glycol dimethyl ether, stir to disperse and dissolve; then slowly add isomerized ten 2.5 grams of alcohol polyoxyethylene ether, fully react, disperse and dissolve to a uniform transparent liquid; then slowly add 1.5 ...

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PUM

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Abstract

The invention discloses a semiconductor cleaning agent and a preparation method thereof, and belongs to the technical field of semiconductor cleaning. The semiconductor cleaning agent comprises the following components in parts by mass: 2-5 parts of a nonionic surfactant, 9-12 parts of an anionic surfactant and 3-6 parts of an organic solvent. The semiconductor cleaning agent prepared by the preparation method of the semiconductor cleaning agent has excellent dispersing performance and tolerance to abrasives, metal ions and the like on the surface of a silicon wafer, the cleaned surface is uniform, smooth and clean, the production requirements of customers are well met, and meanwhile, the pollution to the environment is reduced.

Description

technical field [0001] The application relates to a semiconductor cleaning agent and a preparation method thereof, belonging to the technical field of semiconductor cleaning. Background technique [0002] In the production of silicon transistors and integrated circuits, almost every process has the problem of cleaning silicon wafers. The quality of silicon wafers has a serious impact on device performance. Improper handling may cause all silicon wafers to be scrapped and fail to produce qualified products. Products, or manufactured products have poor performance, poor stability and reliability. [0003] After a series of processing of the silicon material, the surface of the silicon wafer will form sand, cutting abrasives, fingerprints and metal ions. The purpose of cleaning is to remove pollutants such as particles, metal ions and organic substances on the surface of the silicon wafer, so that the surface of the silicon wafer can reach No corrosion, oxidation, no residue a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/83C11D3/20C11D3/04C11D3/33C11D3/60C11D11/00
CPCC11D1/83C11D3/2048C11D3/2068C11D3/044C11D3/33C11D3/0026C11D1/72C11D1/008C11D1/22C11D1/28C11D1/14C11D1/146C11D2111/22
Inventor 骆祖文
Owner 德锡化学(山东)有限公司
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