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Attenuation type high-uniformity phase shift photomask blank and preparation method thereof

An attenuation-type, photomask technology, applied in the field of photomasks, can solve problems such as no clear directivity of hydrofluoric acid resistance, no quality improvement of light interference, and difficulty in forming photolithographic patterns, etc., to achieve Good display effect, good overall interaction, high uniformity effect

Pending Publication Date: 2021-04-16
湖南普照信息材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the refinement of etching is not only affected by the uniformity of the film layer, but also related to the characteristics of the phase shift film layer such as reflectivity, etc., and the existing molybdenum silicide (MoSi) technical solution is not compatible with these two features: uniformity The reliability cannot be guaranteed and the light interference problem in the lithography process is not improved qualitatively, making it difficult for these processes to form finer lithography patterns, so it has certain limitations in high-precision processes
Moreover, the above technical solution only evaluates the performance of sulfuric acid resistance, and does not have a clear direction for the performance of hydrofluoric acid resistance

Method used

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  • Attenuation type high-uniformity phase shift photomask blank and preparation method thereof
  • Attenuation type high-uniformity phase shift photomask blank and preparation method thereof
  • Attenuation type high-uniformity phase shift photomask blank and preparation method thereof

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preparation example Construction

[0045] The present invention also provides a method for preparing an attenuated highly uniform phase-shift photomask blank described in the above technical solution, comprising the following steps:

[0046] a) Pretreating the glass substrate to obtain a treated glass substrate;

[0047] b) sequentially forming a phase-shift layer, a chromium nitride light-shielding film layer and a chromium oxynitride anti-reflection film layer on the treated glass substrate obtained in step a), to obtain an attenuation-type highly uniform phase-shift photomask blank;

[0048] The phase shift layer is a silicon oxide film.

[0049] In the invention, firstly, the glass substrate is pretreated to obtain the treated glass substrate. In the present invention, the glass substrate is the same as that described in the above technical solution, and will not be repeated here. It can be seen that, in the present invention, firstly, the glass substrate whose flatness and transmittance meet the conditio...

Embodiment 1

[0078] (1) Select flatness between 10nm and 12nm, transmittance (in the range of 400nm to 600nm, see figure 2 Shown) is 92% quartz glass for sample preparation; the quartz glass is soaked in electronic grade hydrofluoric acid (HF and pure water at a mass ratio of 1:20) at room temperature for 30 seconds and rinsed with warm pure water at 40°C for 10 minutes, and then rinsed with 60°C ℃ pure nitrogen drying to obtain the treated glass substrate.

[0079] (2) Provide a Si target material, and use the intermediate frequency magnetron sputtering method to plate a silicon oxide film on the treated glass substrate obtained in step (1) to form a phase shift layer; control the temperature of the glass substrate to 120 ° C, using The process gas is Ar, O 2 , whose ratio is in accordance with Ar:O 2 =3:20 volume ratio, the sputtering pressure is 0.13Pa.

[0080] (3) Test the uniformity and thickness distribution of the phase shift layer: use 64 vertical and horizontal points to meas...

Embodiment 2

[0093] (1) Select soda glass with a flatness of 15nm to 20nm and a transmittance (in the range of 400nm to 600nm) of 90% to prepare samples; pass the soda glass through normal temperature electronic grade hydrofluoric acid (HF and pure water according to mass ratio 1:20) soaked for 30s and rinsed with warm pure water at 40°C for 10min, and then dried with pure nitrogen at 60°C to obtain a treated glass substrate.

[0094] (2) Provide a Si target material, and use the intermediate frequency magnetron sputtering method to plate a silicon oxide film on the treated glass substrate obtained in step (1) to form a phase shift layer; control the temperature of the glass substrate to 120 ° C, using The process gas is Ar, O 2 , whose ratio is in accordance with Ar:O 2 =11:100 volume ratio, the sputtering pressure is 0.12Pa.

[0095] (3) Test the uniformity and thickness distribution of the phase shift layer: use 64 vertical and horizontal points to measure the size and uniformity of t...

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Abstract

The invention provides an attenuation type high-uniformity phase shift photomask blank. The attenuation type high-uniformity phase shift photomask blank comprises a glass substrate; a phase shift layer compounded on the glass substrate; a chromium nitride shading film layer compounded on the phase shift layer; and a chromium oxynitride antireflection film layer compounded on the chromium nitride shading film layer; wherein the phase shift layer is a silicon oxide film. Compared with the prior art, the attenuation type high-uniformity phase shift photomask blank provided by the invention adopts a specific film structure to realize better overall interaction, so that the phase shift photomask blank has high uniformity and a good display effect, and has strong hydrofluoric acid resistance and a wide application range.

Description

technical field [0001] The invention relates to the technical field of photomasks, in particular to an attenuation-type high-uniform phase-shift photomask blank and a preparation method thereof. Background technique [0002] Photomask substrates are widely used as electronic raw materials in the photolithography process of plasma display panels (PDP), touch screens (TP), flat panel display (FPD) devices and semiconductor integrated circuit (IC) devices. Substrate photolithography to obtain a photomask plate to transfer process patterns. [0003] The photomask substrate is a nano-scale thin film material with multi-layer chromium metal mainly formed on the surface of a glass substrate with high transmittance. This thin film material generally consists of a light-shielding chromium film layer with light-shielding properties and an The anti-chrome film layer is composed of two layers, and then coated with a photosensitive adhesive layer. The process of patterning the film of ...

Claims

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Application Information

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IPC IPC(8): G03F1/32G03F1/46G03F1/44C23C14/35C23C14/10C23C14/06
Inventor 徐根李翼李伟周志刚杨旭
Owner 湖南普照信息材料有限公司
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