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Method for producing SiC porous sintered body, SiC porous sintered body, and SiC crystal

A sintered body and calcination technology, applied in the field of SiC crystal and SiC porous sintered body, can solve problems such as cumbersome operation

Active Publication Date: 2021-04-30
HUNAN SANAN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In summary, it can be seen that when using physical vapor deposition to grow crystals in the prior art, it is necessary to prepare SiC powder first, then pre-sinter the SiC powder, and then grow crystals by physical vapor deposition. This process is cumbersome. , need to carry out the process of powder filling and secondary sintering

Method used

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Examples

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Effect test

preparation example Construction

[0022] This embodiment provides a method for preparing a SiC porous sintered body, including:

[0023] The binder is mixed with a solvent to form a binder solution; the selected solvent is water, and the solid content of the binder solution is 8-10%, such as 8%, 8.5%, 9%, 9.2%, 9.5%, Any value between 8-10% such as 9.6%, 9.8%, and 10%. And the binder is a water-soluble resin, preferably polyvinyl alcohol resin. Wherein, the solid content refers to the mass content of the binder in the binder solution.

[0024] The use of polyvinyl alcohol as the binder can effectively ensure its bonding effect, and at the same time, can avoid the influence of the binder on the formation of the porous structure, and also reduce the influence of the binder on the performance of the SiC porous sintered body.

[0025] Then carbon powder, silicon powder and binder are mixed and granulated, specifically, the silicon powder and the carbon powder are added into a ball mill for ball milling and mixin...

Embodiment 1

[0037] An embodiment of the present invention provides a method for preparing a SiC porous sintered body, including:

[0038] S1. Granulation:

[0039] Mix silicon powder (purity 9N) and carbon powder in a ball mill jar at a mass ratio of 7 / 3 for 1 hour. After the silicon powder and carbon powder are fully mixed and uniform, the polyvinyl alcohol aqueous solution with a solid content of 10% is evenly sprayed into the rotating ball mill tank as a binder, and the spraying rate of the solution is controlled to obtain powder mixed spheres with uniform particle sizes material. After the granulation process is completed, the finished particle size is 1-3mm pellets. Wherein, the mass ratio of silicon powder: carbon powder: polyvinyl alcohol aqueous solution is 7:3:2.

[0040] S2, compression molding:

[0041] The pellets made above were poured into a mill. The mold is square to form block material. Place the mold on a vibration table and vibrate for 20 minutes to make the pelle...

Embodiment 2

[0048] An embodiment of the present invention provides a method for preparing a SiC porous sintered body, including:

[0049] S1. Granulation:

[0050] Mix silicon powder (purity 9N) and carbon powder in a ball mill jar at a mass ratio of 7 / 3 for 1 hour. After the silicon powder and carbon powder are fully mixed evenly, the polyvinyl alcohol aqueous solution with a solid content of 8% is evenly sprayed into the rotating ball mill tank as a binder, and the injection rate of the solution is controlled to obtain powder mixed spheres with uniform particle sizes material. After the granulation process is completed, the finished particle size is 1-3mm pellets. Wherein, the mass ratio of silicon powder: carbon powder: polyvinyl alcohol aqueous solution is 7:3:3.

[0051] S2, compression molding:

[0052] The pellets made above were poured into a mill. The mold is cylindrical. Place the mold on a vibration table and vibrate for 15 minutes to make the pellets fully contact and ev...

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Abstract

The invention relates to the technical field of silicon carbide sintered bodies, particularly to a preparation method of a SiC porous sintered body, the SiC porous sintered body and SiC crystals. The preparation method of the SiC porous sintered body comprises the following steps: mixing carbon powder, silicon powder and a binder, granulating, carrying out compression molding, carrying out heating curing, and calcining. According to the preparation method, a porous structure with crystal growth is directly formed in the process of synthesizing the raw materials to form SiC, so that the formed SiC porous sintered body can be directly used for growing crystals through physical vapor deposition, the procedures of powder filling, secondary sintering and the like can be avoided, and the production yield is increased.

Description

technical field [0001] The invention relates to the technical field of silicon carbide sintered bodies, in particular to a preparation method of SiC porous sintered bodies, SiC porous sintered bodies and SiC crystals. Background technique [0002] Silicon carbide single crystal material belongs to the representative of the third generation wide bandgap semiconductor material, which has the characteristics of wide bandgap, high thermal conductivity, high breakdown electric field and high radiation resistance. At present, physical vapor deposition (PVT) is the main growth method for silicon carbide single crystal growth, which has been proven to be the most mature growth method for SiC crystals. The general operation is: heating the SiC powder to about 2300°C, and in an atmosphere of inert gas such as argon, the SiC sublimates and crystallizes to form massive crystals, and here crystal growth requires high-purity SiC powders with a suitable packing density as source. At pres...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B38/06C04B35/573C04B35/622C30B29/36C30B23/00
CPCC04B38/068C04B38/067C04B35/573C04B35/622C30B29/36C30B23/00C04B2235/6567C04B2235/6581
Inventor 邓树军张洁黄首义
Owner HUNAN SANAN SEMICON CO LTD
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