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Si3N4 whisker toughened high-thermal-conductivity AlN ceramic substrate and preparation method thereof

A ceramic substrate, high thermal conductivity technology, applied in the field of whisker toughening ceramic substrate materials, can solve the problems of reducing the fracture toughness and reliability of aluminum nitride ceramics, and achieves improved thermal stability and reliability, dense structure, The effect of low thermal conductivity

Active Publication Date: 2021-05-04
NANJING INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In theory, the thermal conductivity of AlN is 320W / (m K), and the thermal conductivity of polycrystalline aluminum nitride actually prepared in industry can also reach 100~250 W / (m), which is the value of traditional substrates. The thermal conductivity of aluminum oxide is 5 to 10 times that of the material; but the existence of strong covalent bonds greatly reduces the fracture toughness of aluminum nitride ceramics, making it suitable for high-power LED lighting and high-power integrated circuits in alternating service environments. The reliability of the

Method used

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  • Si3N4 whisker toughened high-thermal-conductivity AlN ceramic substrate and preparation method thereof
  • Si3N4 whisker toughened high-thermal-conductivity AlN ceramic substrate and preparation method thereof
  • Si3N4 whisker toughened high-thermal-conductivity AlN ceramic substrate and preparation method thereof

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preparation example Construction

[0025] like figure 1 As shown, a preparation method of a Si3N4 whisker-toughened high thermal conductivity AlN ceramic substrate comprises the following steps: the first step: aluminum nitride powder, yttrium oxide, polyazilane fiber, polyethylene glycol butyral , polyethylene glycol and ethanol are mixed, and the mixed slurry is obtained under a water bath; the second step: put the mixed slurry into a polytetrafluoroethylene tank for ball milling, and the third step: after the ball milled slurry is sieved and defoamed The cast slurry is obtained; the fourth step: the cast slurry is passed through the casting process to obtain the composite ceramic film; the fifth step: the composite ceramic film obtained in the fourth step is put into the degreasing furnace for debinding, and the composite ceramic film is obtained The plain sheet; the sixth step: sintering the plain sheet of the composite ceramic obtained in the fifth step under a nitrogen atmosphere to obtain a product.

[...

Embodiment 1

[0030] Aluminum nitride powder, yttrium oxide, polyazilane fiber, polyethylene glycol butyral, polyethylene glycol and ethanol are mixed according to the mass ratio of 1:0.03:0.1:3:2:20, the aluminum nitride The average particle diameter of the powder is 1 μm; the average particle diameter of the yttrium nitride is 0.5 μm; the diameter of the polyazide silane fiber is 1 μm, and the average length is 50 μm; the polymerization degree of the polyethylene glycol butyral is 2000, the molecular weight of the polyethylene glycol is 4000, wherein yttrium oxide is used as a sintering aid, and magnetic stirring is carried out in a water bath at 70° C. for 1 h to obtain a mixed slurry; then the mixed slurry is put into a polytetrafluoroethylene tank for ball milling for 8 h, The ball milling medium is aluminum nitride balls. After the ball milling, the slurry is sieved and defoamed to obtain the casting slurry; the casting slurry is passed through the casting process to obtain a multi-pha...

Embodiment 2

[0033]Aluminum nitride powder, yttrium oxide, polyazilane fiber, polyethylene glycol butyral, polyethylene glycol and ethanol are mixed according to the mass ratio of 1:0.03:0.1:3:2:20, the aluminum nitride The average particle size of the powder is 1.1 μm; the average particle size of the yttrium nitride is 0.4 μm; the diameter of the polyazide silane fiber is 1.1 μm, and the average length is 45 μm; the polymerization of polyethylene glycol butyral The molecular weight of the polyethylene glycol is 2100; the molecular weight of the polyethylene glycol is 3600, and yttrium oxide is used as a sintering aid, and magnetic stirring is carried out in a water bath at 70 ° C for 1 hour to obtain a mixed slurry; then the mixed slurry is put into a polytetrafluoroethylene tank Ball milling for 8 hours, the ball milling medium is aluminum nitride balls, after the ball milling, the slurry is sieved and defoamed to obtain the casting slurry; the casting slurry is passed through the castin...

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Abstract

The invention provides a Si3N4 whisker toughened high-thermal-conductivity AlN ceramic substrate and a preparation method of the Si3N4 whisker toughened high-thermal-conductivity AlN ceramic substrate. The preparation method comprises the following steps: 1, mixing aluminum nitride powder, yttrium oxide, polynitrogen silane fibers, polyethylene glycol butyral, polyethylene glycol and ethanol to obtain mixed slurry in a water bath; step 2, putting the mixed slurry into a polytetrafluoroethylene tank for ball milling; step 3, sieving and defoaming the slurry after ball milling to obtain a tape casting slurry; 4, carrying out a tape casting process on the tape casting slurry to obtain a multiphase ceramic film; 5, feeding the multiphase ceramic film obtained in the step 4 into a debinding furnace for debinding, so as to obtain a multiphase ceramic plain sheet; and 6, sintering the multiphase ceramic plain sheet obtained in the step 5 in a nitrogen atmosphere to obtain the product. Under the condition that the thermal conductivity of aluminum nitride is not influenced as far as possible, the fracture toughness of the aluminum nitride ceramic is improved and the reliability of the aluminum nitride substrate is improved by virtue of the bridging, pulling-out and crack deflection effects of the crystal whiskers.

Description

technical field [0001] The invention belongs to the field of whisker toughened ceramic substrate materials. involving a Si 3 N 4 Whisker toughened AlN ceramic substrate with high thermal conductivity and preparation method. Background technique [0002] With the development of large-scale integrated circuits, people's requirements for packaging substrates are becoming more and more stringent. Among them, high resistivity, high thermal conductivity and low dielectric constant are the most basic requirements of integrated circuits for packaging substrates. The substrate for packaging should also have good thermal matching with silicon wafers, easy molding, high surface flatness, easy metallization, easy processing, low cost, etc., and certain mechanical properties. [0003] Aluminum nitride (AlN), as a new type of advanced ceramic material with excellent comprehensive properties, has excellent thermal conductivity, reliable electrical insulation, low dielectric constant an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/582C04B35/81C04B35/622C04B35/626C04B35/638C04B35/64
CPCC04B35/581C04B35/622C04B35/62625C04B35/6261C04B35/638C04B35/64C04B2235/483C04B2235/3873C04B2235/5276C04B2235/3225C04B2235/5212C04B2235/5445C04B2235/5436C04B2235/658C04B2235/6562C04B2235/6567C04B2235/96C04B2235/9607
Inventor 吴超李华冠张旭张博森权静茹霍可心
Owner NANJING INST OF TECH
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