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Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

A technology of cobalt complexes and meanings, applied in cobalt organic compounds, chemical instruments and methods, compounds of group 4/14 elements of the periodic table, etc., can solve problems such as poor conduction of transistors

Active Publication Date: 2021-05-25
TOSOH CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When producing cobalt-containing thin films, if silicon, barrier layers, and copper wiring are oxidized, there will be problems such as poor conduction with transistors due to an increase in resistance value

Method used

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  • Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film
  • Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film
  • Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

Examples

Experimental program
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Effect test

Embodiment

[0200] Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited thereto. Production of the compounds described in Reference Examples 1 to 7 and Examples 1 to 7, 12, and 16 was all carried out under an argon atmosphere. THF, diethyl ether, and hexane used were dehydrated products manufactured by Kanto Chemical Co., Ltd. 2-Dimethylamino-1,1-dimethylethylamine and 2-diethylamino-1,1-dimethylethylamine were synthesized according to the method described in JP 2018-507255 A.

reference example 1

[0202] [chemical formula 39]

[0203]

[0204]Add 36.0 mL (1.6 mol / L, 57.6 mmol) of butyl lithium in hexane to a solution of 7.62 g (52.4 mmol) of (tert-butyl) (trimethylsilyl) amine in ether (60 mL) at 0°C ). After stirring the mixture at 25°C for 2 hours, a suspension of 3.40 g (26.2 mmol) of cobalt chloride in diethyl ether (30 mL) was added at -78°C. After stirring the mixture at 25°C for 18 hours, the solvent was distilled off under reduced pressure. 60 mL of hexane was added to the residue, followed by vigorous stirring at room temperature. After filtering the resulting suspension, the solvent was distilled off from the filtrate under reduced pressure. By distilling the remaining liquid (heating temperature 90° C. / back pressure 39 Pa), 2.93 g of bis[(tert-butyl)(trimethylsilyl)amino]cobalt (2- 2) (Yield 32%).

[0205] 1 H-NMR (400MHz, C 6 D. 6 , δ): 54.3 (br, 18H), 33.0 (br, 18H).

reference example 2

[0207] [chemical formula 40]

[0208]

[0209] To a THF (50 mL) solution of 13.0 g (100 mmol) of cobalt chloride was added 154 mL (1.3 mol / L, 200 mmol) of a THF solution of lithium bis(trimethylsilyl)amide at -78°C. After stirring the mixture at 25°C for 17 hours, the solvent was distilled off under reduced pressure. To the residue was added 90 mL of hexane, followed by vigorous stirring at room temperature. After the resulting suspension was filtered, the solvent was distilled off from the filtrate under reduced pressure. By subliming the remaining solid (heating temperature 120° C. / back pressure 51 Pa), 40.1 g of bis[bis(trimethylsilyl)amino]cobalt (2-8) was obtained in the form of a dark green solid (received rate 89%).

[0210] 1 H-NMR (400MHz, C 6 D. 6 , δ): 168.2 (br, 4H), 100.2 (br, 4H), -15.9 (br, 36H).

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Abstract

Provided is a cobalt complex which is liquid at room temperature and useful for manufacturing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by formula (1). (L1 and L2 represent a unidentate amide ligand of formula (A), a bidentate amide ligand of formula (B) or a heteroatom-containing ligand of formula (C).) (R1 and R2 represent a C1-C6 alkyl group or a tri(C1-C6 alkyl)silyl group. A wiggly line represents an atomic bonding with a cobalt atom.) (R3 represents a tri(C1-C6 alkyl)silyl group. R4 and R5 represent a C1-C4 alkyl group. X represents a C1-C6 alkylene group.) In the formula C, R6 and R8 represent a C1-C6 alkyl group. R7 represents a hydrogen atom or a C1-C4 alkyl group. Y represents an oxygen atom or NR9. Z represents an oxygen atom or NR10. R9 and R10 independently represent a C1-C6 alkyl group.

Description

technical field [0001] The present invention relates to a cobalt complex useful as a raw material for semiconductor element production, a method for producing the same, and a method for producing a cobalt-containing thin film using the cobalt complex. Background technique [0002] Cobalt has the characteristics of high conductivity, large work function, formation of conductive silicide, and excellent lattice matching with copper. The materials of contacts, copper wiring seed layer / pad layer, etc. have attracted much attention. For next-generation semiconductor devices, in order to further improve storage capacity and responsiveness, a highly precise and highly three-dimensional design is adopted. Therefore, in order to use cobalt as a material constituting next-generation semiconductor devices, it is necessary to establish a technique for uniformly forming a cobalt-containing thin film with a thickness of several nanometers to several tens of nanometers on a three-dimension...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C251/12C07F15/06C07F19/00C07C49/12C07F7/10C23C16/18
CPCC23C16/18C07F15/065C07C49/14C07C49/12C23C16/45553C23C16/4485C07F17/02C07F15/06
Inventor 尾池浩幸早川哲平山本有纪古川泰志多田贤一
Owner TOSOH CORP
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